D882-R-TP

D882 Features • Halogen Free Available Upon Request By Adding Suffix "-HF" • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings @ 25°C Unless Otherwise Specified • Operating Junction Temperature Range: -55℃ to +150℃ • Storage Temperature Range: -55℃ to +150℃ • Thermal Resistance: 100℃/W Junction to Ambient Parameter Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 6 V IC 3 A Continuous Collector Current PD Power Dissipation 1.25 W NPN Silicon Plastic-Encapsulate Transistor DPAK(TO-252) J H 1 C O 4 2 I F E 3 V K M Q A Internal Structure G L D B 2,4 1 3 1.BASE 2,4.COLLECTOR 3.EMITTER DIM A B C D E F G H I J K L M O Q V Rev.3-2-12012020 1/4 DIMENSIONS INCHES MM MIN MAX MIN MAX 0.087 0.094 2.20 2.40 0.000 0.005 0.00 0.13 0.026 0.034 0.66 0.86 0.018 0.023 0.46 0.58 0.256 0.264 6.50 6.70 0.201 0.215 5.10 5.46 0.190 4.83 0.236 0.244 6.00 6.20 0.086 0.094 2.18 2.39 0.386 0.409 9.80 10.40 0.114 2.90 0.055 0.067 1.40 1.70 0.063 1.60 0.043 0.051 1.10 1.30 0.000 0.012 0.00 0.30 0.211 5.35 NOTE TYP. TYP. TYP. TYP. MCCSEMI.COM D882 Electrical Characteristics @ TA=25°C Unless Otherwise Specified Parameter Symbol Min Typ Max Units Conditions Collector-Base Breakdown Voltage V(BR)CBO 40 V IC=100µA, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO 30 V IC=10mA, IB=0 Emitter-Base Breakdown Voltage V(BR)EBO 6 V IE=100µA, IC=0 Collector-Base Cutoff Current ICBO 1 µA VCB=40V, IE=0 Collector-Base Cutoff Current ICEO 10 µA VCE=30V, IB=0 Emitter-Base Cutoff Current IEBO 1 µA VEB=6V, IC=0 DC Current Gain hFE 60 VCE=2V, IC=1A 400 Collector-Emitter Saturation Voltage VCE(sat) 0.5 V IC=2A, IB=0.2A Base-Emitter Saturation Voltage VBE(sat) 1.5 V IC=2A, IB=0.2A fT Transition Frequency 90 MHz VCE=5V,IC=0.1A, f=10MHz Classification of hFE Rank R O Y GR Range 60-120 100-200 160-320 200-400 Rev.3-2-12012020 2/4 MCCSEMI.COM D882 Curve Characteristics Fig. 1 - Static Characteristics Fig. 2 - DC Current Gain Characteristics 2.0 1000 10mA 9mA Common Emitter TA=25°C 8mA Common Emitter VCE= 2V 7mA 1.6 TA=100°C DC Current Gain Collector Current (A) 6mA 5mA 1.2 4mA 0.8 3mA TA=25°C 100 2mA 0.4 IB=1mA 0.0 0 2 4 6 10 8 1 10 Fig. 3 - Base-Emitter Saturation Voltage Characteristics 3000 1000 Collector-Emitter Saturation Voltage (mV) Base-Emitter Saturation Voltage (mV) 1000 Fig. 4 - Collector-Emitter Saturation Voltage Characteristics 2000 1000 TA=25°C TA=100°C β=10 100 100 Collector Current (mA) Collector-Emitter Voltage (V) 1 10 100 1000 100 TA=100°C β=10 1 3000 TA=25°C 10 1 10 Collector Current (mA) 100 1000 3000 Collector Current (mA) Fig. 6 - Collector Power Derating Curve Fig. 5 - Base-Emitter Voltage Characteristics 1.5 3000 Collector Power Dissipation (W) Collcetor Current (mA) 1000 TA=100°C 100 TA=25°C 10 1.0 0.5 Common Emitter VCE=2V 1 0.0 0.2 0.4 0.6 0.8 1.0 0.0 1.2 Base-Emitter Voltage (V) Rev.3-2-12012020 0 25 50 75 100 125 150 Ambient Temperature (°C) 3/4 MCCSEMI.COM D882 Ordering Information Device Packing Part Number-TP Tape&Reel: 2.5Kpcs/Reel Note : Adding "-HF" Suffix for Halogen Free, eg. 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