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ES1DSR

ES1DSR

  • 厂商:

    MCC(美微科)

  • 封装:

  • 描述:

    ES1DSR - 1 Amp Soft Recovery Rectifier 200 Volts - Micro Commercial Components

  • 数据手册
  • 价格&库存
ES1DSR 数据手册
MCC • • • • •   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# ES1DSR Features For Surface Mount Applications Extremely Low Thermal Resistance Easy Pick And Place High Temp Soldering: 250 °C for 10 Seconds At Terminals Superfast Recovery Times For High Efficiency Maximum Ratings • • • Operating Temperature: -50 °C to +150°C Storage Temperature: -50°C to +150°C Maximum Thermal Resistance; 15 °C/W Junction To Lead MCC Device Maximum Maximum Maximum Catalog Marking Recurrent RMS DC Number Peak Reverse Voltage Blocking Voltage Voltage ES1DSR ES1D 200V 140V 200V 1 Amp Soft Recovery Rectifier 200 Volts DO-214AC (SMAJ) (High Profile) H Cathode Band J Electrical Characteristics @ 25°C Unless Otherwise Specified Average Forward Current Peak Forward Surge Current Maximum Instantaneous Forward Voltage IF(AV) IFSM 1.0A 30A TJ = 75°C 8.3ms, half sine F G E A C D B DIMENSIONS INCHES MIN .078 .067 .002 --.035 .065 .205 .160 .100 MM MIN 1.98 1.70 .05 --.89 1.65 5.21 4.06 2.57 VF Maximum DC Reverse Current At Rated DC Blocking Voltage Maximum Reverse Recovery Time .97V 5µA 30µA IFM = 1.0A; TJ = 25°C* TJ = 25°C TJ = 125°C IR DIM A B C D E F G H J MAX .116 .089 .008 .02 .055 .096 .224 .180 .112 MAX 2.95 2.25 .20 .51 1.40 2.45 5.69 4.57 2.84 NOTE SUGGESTED SOLDER PAD LAYOUT Trr Typical Junction Capacitance CJ 50ns 45pF IF=0.5A, IR=1.0A, Irr=0.25A Measured at 1.0MHz, VR=4.0V 0.090” 0.085” 0.070” *Pulse test: Pulse width 200 µsec, Duty cycle 2% www.mccsemi.com ES1DSR Figure 1 Typical Forward Characteristics 20 10 6 4 2 Amps 1 .6 .4 .2 .1 .06 .04 .02 .01 .2 .4 .6 Volts Instantaneous Forward Current - Amperesversus Instantaneous Forward Voltage - Volts .8 1.0 1.2 Amps 2.4 2.2 2.0 1.8 25°C 1.6 1.4 1.2 1.0 .8 .6 .4 Figure 2 Forward Derating Curve MCC Single Phase, Half Wave .2 60Hz Resistive or Inductive Load 0 0 25 50 75 100 125 150 °C Average Forward Rectified Current - Amperes ersus v Ambient Temperature - °C Figure 3 Junction Capacitance 100 60 40 20 pF 10 6 4 2 1 .1 .2 .4 1 Volts 2 4 10 20 40 100 200 400 1000 TJ=25°C Junction Capacitance - pFversus Reverse Voltage - Volts www.mccsemi.com ES1DSR Figure 4 Peak Forward Surge Current 30 25 20 15 Amps 10 5 0 1 4 6 8 10 Cycles Peak Forward Surge Current - Amperesversus Number Of Cycles At 60Hz - Cycles 20 40 60 80 100 MCC Figure 5 New SMA Assembly Round Lead Process 2 Figure 6 Reverse Recovery Time Characteristic And Test Circuit Diagram 50Ω 10Ω trr +0.5A 0 25Vdc Pulse Generator Note 2 1Ω Oscilloscope Note 1 -0.25 -1.0 1cm Set Time Base for 20/100ns/cm Notes: 1. Rise Time = 7ns max. Input impedance = 1 megohm, 22pF 2. Rise Time = 10ns max. Source impedance = 50 ohms 3. Resistors are non-inductive www.mccsemi.com
ES1DSR 价格&库存

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