FR1B

FR1B

  • 厂商:

    MCC(美微科)

  • 封装:

  • 描述:

    FR1B - 1 Amp Fast Recovery Silicon Rectifier 50 to 1000 Volts - Micro Commercial Components

  • 详情介绍
  • 数据手册
  • 价格&库存
FR1B 数据手册
MCC Features   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# FR1A THRU FR1M 1 Amp Fast Recovery Silicon Rectifier 50 to 1000 Volts DO-214AA (SMBJ) (Round Lead) H Cathode Band • • • • • For Surface Mount Applications Extremely Low Thermal Resistance Easy Pick And Place High Temp Soldering: 250 °C for 10 Seconds At Terminals Superfast Recovery Times For High Efficiency Maximum Ratings • • • Operating Temperature: -50 °C to +150°C Storage Temperature: -50°C to +150°C Maximum Thermal Resistance; 15 °C/W Junction To Lead MCC Device Maximum Maximum Maximum Catalog Marking Recurrent RMS DC Number Peak Reverse Voltage Blocking Voltage Voltage FR1A FR1A 50V 35V 50V FR1B FR1B 100V 70V 100V FR1D FR1D 200V 140V 200V FR1G FR1G 400V 280V 400V FR1J FR1J 600V 420V 600V FR1K FR1K 800V 560V 800V FR1M FR1M 1000V 700V 1000V J A C E F G D B Electrical Characteristics @ 25°C Unless Otherwise Specified Average Forward IF(AV) 1.0A TJ = 90°C current Peak Forward Surge IFSM 30A 8.3ms, half sine Current IFM = 1.0A; Maximum 1.30V Instantaneous VF TJ = 25°C* Forward Voltage Maximum DC Reverse Current At IR 5µA TJ = 25°C Rated DC Blocking 200µA TJ = 125°C Voltage Maximum Reverse Recovery Time 150ns FR1A-G IF=0.5A, IR=1.0A, Trr 250ns Irr=0.25A FR1J 500ns FR1K-M Typical Junction CJ 12pF Measured at Capacitance 1.0MHz, VR=4.0V *Pulse test: Pulse width 200 µsec, Duty cycle 2% DIM A B C D E F G H J INCHES MIN .078 .075 .002 ----.035 .065 .205 .160 .130 MAX .116 .089 .008 .02 .055 .091 .224 .180 .155 DIMENSIONS MM MIN 1.98 1.90 .05 ----.90 1.65 5.21 4.06 3.30 MAX 2.95 2.25 .20 .51 1.40 2.32 5.69 4.57 3.94 NOTE SUGGESTED SOLDER PAD LAYOUT 0.090" 0.085” 0.070” www.mccsemi.com FR1A thru FR1M Figure 1 Typical Forward Characteristics 20 10 6 4 2 Amps 1 .6 .4 .2 .1 .06 .04 .02 .01 .6 .8 10 Volts Instantaneous Forward Current - Amperesversus Instantaneous Forward Voltage - Volts 1.2 1.4 1.6 Amps 2.4 2.2 2.0 1.8 25°C 1.6 1.4 1.2 1.0 .8 .6 .4 Figure 2 Forward Derating Curve MCC Single Phase, Half Wave .2 60Hz Resistive or Inductive Load 0 0 25 50 75 °C Average Forward Rectified Current - Amperes ersus v Ambient Temperature - °C 100 125 150 Figure 3 Junction Capacitance 100 60 40 20 pF 10 6 4 2 1 .1 .2 .4 1 Volts 2 4 10 20 40 100 200 400 1000 TJ=25°C Junction Capacitance - pFversus Reverse Voltage - Volts www.mccsemi.com FR1A thru FR1M Figure 4 Peak Forward Surge Current 36 30 24 18 Amps 12 6 0 1 4 6 8 10 Cycles Peak Forward Surge Current - Amperesversus Number Of Cycles At 60Hz - Cycles 20 40 60 80 100 MCC Figure 5 New SMB Assembly Round Lead Process 2 Figure 6 Reverse Recovery Time Characteristic And Test Circuit Diagram 50Ω 10Ω trr +0.5A 0 25Vdc Pulse Generator Note 2 1Ω Oscilloscope Note 1 -0.25 -1.0 1cm Set Time Base for 20/100ns/cm Notes: 1. Rise Time = 7ns max. Input impedance = 1 megohm, 22pF 2. Rise Time = 10ns max. Source impedance = 50 ohms 3. Resistors are non-inductive www.mccsemi.com
FR1B
1. 物料型号: - MCC Catalog Number:FR1A至FR1M,代表不同的电压等级。

2. 器件简介: - 该文档描述的是快恢复硅整流二极管,适用于表面贴装,具有极低的热阻、易于贴装、耐高温焊接、超快速恢复时间,适用于高效率应用。

3. 引脚分配: - DO-214AA(SMBJ)为圆形引脚封装。

4. 参数特性: - 最大重复峰值反向电压:50V至1000V不等。 - 最大RMS电压:35V至700V不等。 - 最大直流阻断电压:50V至1000V不等。 - 工作温度:-50°C至+150°C。 - 存储温度:-50°C至+150°C。 - 最大热阻:15°C/W(结到引脚)。

5. 功能详解应用信息: - 平均正向电流IF(AV)为1.0A,环境温度为90°C。 - 正向峰值浪涌电流IFSM为30A,持续时间为8.3ms,半正弦波形。 - 最大瞬时正向电压VF为1.30V,IFM=1.0A,环境温度为25°C。 - 典型结电容CJ为12pF,测量频率为1.0MHz,反向电压VR=4.0V。

6. 封装信息: - 提供了详细的尺寸参数,单位为英寸和毫米,包括最小值和最大值。

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