GS1J

MCC Features • • • •
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# GS1A THRU GS1M For Surface Mount Applications Extremely Low Thermal Resistance Easy Pick And Place High Temp Soldering: 250 °C for 10 Seconds At Terminals 1 Amp Silicon Rectifier 50 to 1000 Volts DO-214AC (SMAJ) (High Profile) H Cathode Band • • • Maximum Ratings Operating Temperature: -55 °C to +150°C Storage Temperature: -55°C to +150°C Maximum Thermal Resistance; 15 °C/W Junction To Lead MCC Catalog Number GS1A GS1B GS1D GS1G GS1J GS1K GS1M Device Marking GS1A GS1B GS1D GS1G GS1J GS1K GS1M Maximum Recurrent Peak Reverse Voltage 50V 100V 200V 400V 600V 800V 1000V Maximum RMS Voltage 35V 70V 140V 280V 420V 560V 700V Maximum DC Blocking Voltage 50V 100V 200V 400V 600V 800V 1000V DIM A B C D E F G H J J A C E F G D B DIMENSIONS INCHES MIN .078 .067 .002 --.035 .065 .205 .160 .100 MM MIN 1.98 1.70 .05 --.89 1.65 5.21 4.06 2.57 Electrical Characteristics @ 25°C Unless Otherwise Specified Average Forward current Peak Forward Surge Current Maximum Instantaneous Forward Voltage Maximum DC Reverse Current At Rated DC Blocking Voltage Typical Junction Capacitance IF(AV) IFSM 1.0A 30A TJ = 75°C 8.3ms, half sine, IFM = 1.0A; TJ = 25°C* TJ = 25°C TJ = 125°C Measured at 1.0MHz, VR=4.0V MAX .116 .089 .008 .02 .055 .096 .224 .180 .112 MAX 2.95 2.25 .20 .51 1.40 2.45 5.69 4.57 2.84 NOTE VF 1.1V 10µA 50µA 15pF SUGGESTED SOLDER PAD LAYOUT 0.090” IR CJ 0.085” *Pulse test: Pulse width 300 µsec, Duty cycle 2% 0.070” www.mccsemi.com GS1A thru GS1M Figure 1 Typical Forward Characteristics 20 10 6 4 2 12 Amps 1 .6 .4 .2 25°C .1 .06 .04 .02 .01 1.0 .4 .6 .8 Volts Instantaneous Forward Current - Amperesversus Instantaneous Forward Voltage - Volts .6 .4 Resistive or .2 Inductive Load 0 0 20 40 60 1.0 1.2 1.4 Amps .8 1.4 1.2 Figure 4 Forward Derating Curve 1 10 Cycles 6 Amps 36 30 24 18 MCC Figure 3 Maximum Overload Surge Current -55°C to +150°C 100 Peak Forward Current - Amperesversus Number of Cycles at 60Hz 80 100 120 140 160 180 200 °C Figure 2 Junction Capacitance Average Forward Rectified Current - Amperes ersus v Ambient Temperature - °C 100 60 40 20 pF 10 6 4 2 1 .1 .2 .4 1 Volts 2 4 10 20 40 100 200 400 1000 Median Typical Distribution Junction Capacitance - pFversus Reverse Junction Potential (Applied V + 0.7 Volts) - Volts www.mccsemi.com GS1A thru GS1M Figure 5 Peak Forward Surge Current 1000 600 400 200 100 Amps 60 40 20 10 .01 .02 .06 .1 .2 mS Peak Forward Surge Current - Amperesversus Pulse Duration - Milliseconds (mS) .6 1 2 6 10 MCC Figure 6 New SMA Assembly Round Lead Process www.mccsemi.com