KSD1616-L

MCC Micro Commercial Components TM
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# KSD1616-Y/G/L KSD1616A-Y/G NPN Silicon Epitaxial Transistors Features • • • • • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Audio frequency power amplifier & medium speed switching Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Marking:D1616 X Rating Collector-Emitter Voltage KSD1616 KSD1616A V CBO Collector-Base Voltage KSD1616 KSD1616A V EBO IC ICP PC TJ TSTG Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) (1) Collector power dissipation Junction Temperature Storage Temperature Parameter Collector Cutoff Current (VCB=60Vdc,IE =0) Emitter-Base Cutoff Current (VEB =6.0Vdc, IC=0) DC Current Gain (IC=100mAdc, V CE=2.0Vdc) KSD1616 KSD1616A DC Current Gain (VCE=2.0Vdc, IC=1.0Adc) Collector-Emitter Saturation Voltage (2) (IC=1.0Adc, IB=50mAdc) Base-Emitter Saturation Voltage (2) (IC=1.5Adc, IB=75mAdc) Base-Emitter On Voltage (2) ( VCE=2.0Vdc, IC=50mAdc) Current Gain Bandwidth Product (IC=100mAdc, V CE=2.0Vdc) Collector Output Capacitance (VCE=10Vdc, IE =0, f=1.0MHz) VCC=10V, Turn On Time IC=100mA, Storage Time IB1=IB2=10mA, Fall Time VBE(off) =-2~-3V 60 120 6.0 1.0 2.0 0.75 -55 to +150 -55 to +150 Min ----Typ ----Max 100 100 V V A A W O C O C Units nAdc nAdc Rating 50 60 Unit V Maximum Ratings Symbol V CEO TO-92 A E B Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol C OFF CHARACTERISTICS ICBO IEBO ON CHARACTERISTICS hFE-1 D 135 135 81 ----600 100 --------- ------0.15 0.9 640 160 19 0.07 0.95 0.07 600 400 --0.3 1.2 700 ----------- ----Vdc Vdc mVdc DIMENSIONS hFE-2 V CE(sat) V BE(sat) V BE(ON) fT Cob TON tSTG TF G E C B MHz pF us us us DIM A B C D E G INCHES MIN .175 .175 .500 .016 .135 .095 MM MAX .185 .185 ------.020 .145 .105 MIN 4.45 4.45 12.70 0.41 3.43 2.42 MAX 4.70 4.70 -------0.56 3.68 2.67 NOTE hFE ( 1) Classification Classification Y G hFE-1 135-270 200-400 (1) PW