MCB70N10Y-TP

MCB70N10Y Features • • • Trench Power MV MOSFET Technology Excellent Package for Heat Dissipation High Density Cell Design for Low RDS(on) • Epoxy Meets UL 94 V-0 Flammability Rating • Moisture Sensitivity Level 1 • • Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) N-CHANNEL MOSFET Maximum Ratings • Operating Junction Temperature Range : -55°C to +175°C • Storage Temperature Range: -55°C to +175°C • Thermal Resistance: 1.3°C/W Junction to Case D2-PAK S Parameter Drain-Source Voltage Gate-Source Volltage Continuous Drain Current TC=25°C TC=100°C Symbol Rating Unit VDS 100 V VGS ±25 V 70 A 49 A ID Pulsed Drain Current IDM 240 A Single Pulse Avalanche Energy EAS 530 mJ Total Power Dissipation PD 115 W 1 G 1. Gate 2,4. Drain 3. Source G S B D C H w J A B C D E G H J K S V W D 4 2 3 DIM Internal Structure V A E K DIMENSIONS INCHES MM MIN MAX MIN MAX 0.331 0.370 8.40 9.40 0.378 0.417 9.60 10.60 0.165 0.189 4.20 4.80 0.027 0.037 0.68 0.94 0.045 0.055 1.14 1.40 0.010 2.54 0.096 0.134 2.43 3.40 0.011 0.025 0.28 0.64 0.071 0.131 1.80 3.32 0.575 0.625 14.60 15.87 0.042 0.058 1.07 1.47 0.000 0.010 0.00 0.25 NOTE TYP. Suggested Solder Pad Layout .638 16.20 .065 1.65 Inches mm .420 10.66 .070 1.78 .330 8.38 Rev.3-3-12152020 1/4 .138 3.50 MCCSEMI.COM MCB70N10Y Electrical Characteristics @ 25°C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics V(BR)DSS VGS=0V, ID=250µA Gate-Source Leakage Current IGSS VDS=0V, VGS =±25V ±100 nA Zero Gate Voltage Drain Current IDSS VDS=100V, VGS=0V 1 µA Gate-Threshold Voltage(Note 1) VGS(th) VDS=VGS, ID=250µA 3 4 V Drain-Source On-Resistance(Note 1) RDS(on) VGS=10V, ID=12A 14.5 18 mΩ VSD VGS=0V, IS=12A 0.8 1.2 V 70 A Drain-Source Breakdown Voltage Diode Forward Voltage Continuous Body Diode Current 100 2 V IS Dynamic Characteristics(Note 2) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 120 Total Gate Charge Qg 80 Gate-Source Charge Qgs Gate-Drain Charge Qgd Reverse Recovery Chrage Qrr Reverse Recovery Time trr 54 Turn-On Delay Time td(on) 13 Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time 2960 VDS=50V,VGS=0V,f=1MHz VDD=50V,VGS=10V,ID=12A 142 pF 12 nC 25 VR=50V, IF=12A, dIF/dt=100A/μs VGS=10V,VDD=50V, ID=12A, RGEN=1Ω tf 33 14 ns 25 10 Note 1. Pulse Test : Pulse Width≤300μs, Duty Cycle ≤2%. 2. Guaranteed by Design, Not Subject to Production Testing. Rev.3-3-12152020 2/4 MCCSEMI.COM MCB70N10Y Curve Characteristics Fig. 1 - Typical Output Characteristics Fig. 2 - Transfer Characteristics 140 110 7.5V 120 90 6.5V 80 Drain Current (A) 100 Drain Current (A) VDS=25V 100 10V 7V 60 40 6V 20 VGS=5.5V 80 70 60 50 40 TJ=125°C 30 20 10 TJ=25°C 0 0 0 1 2 3 4 0 5 1 2 3 4 5 6 7 8 Gate To Source Voltage (V) Drain To Source Voltage (V) Fig. 4 - Total Gate Charge Characteristics Fig. 3 - Capacitance Characteristics 10 10000 VDS=50V ID=12A Gate-Source Voltage (V) Capacitance (pF) Ciss 1000 Coss 8 6 4 2 Crss 0 100 0 20 40 60 80 0 100 20 40 80 Total Gate Charge(nC) Drain To Source Voltage (V) Fig. 5 - RDS(ON)—ID Fig. 6 - Normalized On Resistance Characteristics 2.6 40 VGS=10V 2.4 Normalized On Resistance Drain-Source on Resistance (mΩ) 60 30 20 10 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0 0 10 20 30 40 0.8 50 0 Drain Current(A) Rev.3-3-12152020 25 50 75 100 125 150 175 Junction Temperature(°C) 3/4 MCCSEMI.COM MCB70N10Y Ordering Information Device Packing Part Number-TP Tape&Reel: 800pcs/Reel Note : Adding "-HF" Suffix for Halogen Free, eg. 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