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MCCD2004-TP

MCCD2004-TP

  • 厂商:

    MCC(美微科)

  • 封装:

    WFDFN6_EP

  • 描述:

    MOSFET 2N-CH 20V 10A

  • 详情介绍
  • 数据手册
  • 价格&库存
MCCD2004-TP 数据手册
MCC R Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MCCD2004 Features • Advanced trench MOSFET process technology • • Halogen free available upon request by adding suffix "-HF" Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Marking:2004 Dual N-Channel Power MOSFET DFN2030-6 Maximum Ratings @ 25OC Unless Otherwise Specified Symbol VDS ID IDM VGS R©JA TJ TSTG Parameter Drain-source Voltage Drain Current-Continuous Pulsed Drain Current (note1) Gate-source Voltage Thermal Resistance Junction to Ambient Rating 20 10 40 f 12 Unit V A A V 125 к/W D C A B E Operating Junction Temperature -55 to +150 к Storage Temperature -55 to +150 к L Notes: 1.. Repetitive Rating: Pulse width limited by junction temperature. J F G Equivalent Circuit K H Dimensions INCHES DIM MIN MM MAX MIN .032 MAX A 0.028 B C 0.008REF. 0000 0.002 0.800 0.203REF. 0.000 0.050 D E 0.077 0.116 0.081 0.120 1.950 2.950 2.050 3.050 F G 0.055 0.063 0.063 0.071 1.400 1.600 1.600 1.800 H 0.012 --- 0.200 0.200 0.300 J 0.008 0.008 K 0.018 0.026 0.300 0.400 L 0.020TYP. NOTE 0.700 --0.500TYP. www.mccsemi.com Revision: A 1 of 4 2016/02/03 MCC Micro Commercial Components ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit STATIC PARAMETERS Drain-source breakdown voltage V (BR) DSS VGS = 0V, ID =250µA Zero gate voltage drain current IDSS VDS =16V,VGS = 0V Gate-body leakage current IGSS VGS =±10V, VDS = 0V VGS(th) VDS =VGS, ID =250µA Gate threshold voltage (note 1) Drain-source on-resistance (note 1) RDS(on) 20 V 1 µA ±10 µA 1 V VGS =10V, ID =8A 10 mΩ VGS =4.5V, ID =5A 12 mΩ VGS =3.8V, ID =5A 13 mΩ VGS =2.5V, ID =4A 17 mΩ Forward tranconductance (note 1) gFS VDS =5V, ID =8A Diode forward voltage(note 1) VSD IS=1A, VGS = 0V 0.5 36 S 1 V DYNAMIC PARAMETERS (note 2) 1955 pF 220 pF Crss 180 pF Total gate charge Qg 18.5 nC Gate-source charge Qgs 2 nC Gate-drain charge Qgd 5.1 nC td(on) 3 ns Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance VDS =10V,VGS =0V,f =1MHz VDS =10V,VGS =4.5V,ID =8A SWITCHING PARAMETERS(note 2) Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time tr VGS=10V,VDD=10V, 7.4 ns td(off) RL=1.2Ω,RGEN=3Ω 55 ns 12.3 ns tf Notes : 1. Pulse Test : Pulse width≤300µs, duty cycle≤0.5%. 2. Guaranteed by design, not subject to production testing. www.mccsemi.com Revision: A 2 of 4 2016/02/03 R MCC 7\SLFDO&KDUDFWHULVWLFV R Micro Commercial Components Output Characteristics Transfer Characteristics 16 20 Ta=25℃ VGS=2V,3V,4V,5V Pulsed VDS=3V Pulsed 14 VGS=1.5V ID (A) 12 DRAIN CURRENT ID DRAIN CURRENT (A) 16 8 12 10 Ta=100℃ Ta=25℃ 8 6 4 4 2 VGS=1V 0 0 1 2 3 4 DRAIN TO SOURCE VOLTAGE VDS 0 0.0 5 0.5 (V) 1.0 1.5 GATE TO SOURCE VOLTAGE 2.0 VGS RDS(ON) —— VGS RDS(ON) —— ID 15 50 Pulsed Ta=25℃ Pulsed (m) RDS(ON) (m) RDS(ON) 10 ON-RESISTANCE ON-RESISTANCE VGS=3.8V VGS=4.5V VGS=10V 1 3 2 5 4 DRAIN CURRENT 6 ID ID=8A 40 VGS=2.5V 5 2.5 (V) 7 30 20 Ta=100℃ 10 0 8 Ta=25℃ 0 (A) 1 2 3 4 5 6 GATE TO SOURCE VOLTAGE 7 V GS 8 9 10 (V) Threshold Voltage IS —— VSD 8 1.0 Ta=100℃ Ta=25℃ 0.1 0.01 0.0 0.8 VTH 1 THRESHOLD VOLTAGE SOURCE CURRENT IS (A) (V) Pulsed 0.2 0.4 0.6 0.8 SOURCE TO DRAIN VOLTAGE 1.0 0.4 0.2 0.0 25 1.2 VSD (V) ID=250uA 0.6 50 75 JUNCTION TEMPERATURE 100 Tj 125 (℃ ) www.mccsemi.com Revision: A 3 of 4 2016/02/03 MCC R Micro Commercial Components Ordering Information : Device Packing Tape&Reel:3Kpcs/Reel Part Number-TP Note : Adding "-HF" suffix for halogen free, eg. Part Number-TP-HF ***IMPORTANT NOTICE*** Micro Commercial Components Corp. reserves the right to make changes without further notice to any product herein to make corrections, modifications , enhancements , improvements , or other changes . Micro Commercial Components Corp . does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights ,nor the rights of others . The user of products in such applications shall assume all risks of such use and will agree to hold Micro Commercial Components Corp . and all the companies whose products are represented on our website, harmless against all damages. ***LIFE SUPPORT*** MCC's products are not authorized for use as critical components in life support devices or systems without the express written approval of Micro Commercial Components Corporation. ***CUSTOMER AWARENESS*** Counterfeiting of semiconductor parts is a growing problem in the industry. Micro Commercial Components (MCC) is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. MCC strongly encourages customers to purchase MCC parts either directly from MCC or from Authorized MCC Distributors who are listed by country on our web page cited below. Products customers buy either from MCC directly or from Authorized MCC Distributors are genuine parts, have full traceability, meet MCC's quality standards for handling and storage. MCC will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. MCC is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. www.mccsemi.com Revision: A 4 of 4 2016/02/03
MCCD2004-TP
物料型号:MCCD2004 器件简介:采用了先进的沟槽MOSFET工艺技术,无卤素版本可通过添加后缀“-HF”来请求,环氧树脂符合UL 94 V-0易燃性等级,湿度敏感等级为1,型号标记为2004。

引脚分配:DFN2030-6封装,具体的引脚分配没有在文档摘要中体现。

参数特性:包括漏源电压、连续漏电流、脉冲漏电流、栅源电压、结到环境的热阻、工作结温度范围、存储温度范围等。

功能详解:静态参数包括漏源击穿电压、零栅电压漏电流、栅体漏电流、栅阈值电压、漏源导通电阻等。动态参数包括输入电容、输出电容、反向传输电容、总栅电荷等。

应用信息:文档中未提供具体应用信息,但根据器件类型和特性,可以推断用于功率放大、开关电源等场景。

封装信息:DFN2030-6封装,提供了尺寸参数,例如A至H的尺寸范围。
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