MCP04N80-BP

MCP04N80 Features • • Excellent Stability and Uniformity Lower RDS(ON) • Epoxy Meets UL 94 V-0 Flammability Rating • Moisture Sensitivity Level 1 N-Channel Enhancement Mode Field Effect Transistor Maximum Ratings TO-220 • Operating Junction Temperature Range: -55°C to +150°C • Storage Temperature Range: -55°C to +150°C • Thermal Resistance: 62°C/W Junction to Ambient Parameter B Rating Unit Drain -Source Voltage VDS 800 V Gate -Source Volltage VGS ±30 V Drain Current-Continuous ID 4.0 A Drain Current-Pulse(Note1) IDM 12 A Power Dissipation PD 63 W Single Pulsed Avalanche Repetitive Avalanche EAS EAR Energy(Note1) 162 0.2 A 1 2 3 H K D mJ G mJ A B C D F G H J K L N Q R S T U V D 1.GATE 2.DRAIN 3.SOURCE G S Rev.3-2-12012020 1/4 T U DIM Internal Structure S Q Symbol Energy(Note2) C F N J R DIMENSIONS INCHES MM MIN MAX MIN MAX 0.560 0.625 14.22 15.88 0.380 0.420 9.65 10.67 0.140 0.190 3.56 4.82 0.020 0.045 0.51 1.14 0.139 0.161 3.53 4.09 0.090 0.110 2.29 2.79 ----- 0.250 ----- 6.35 0.012 0.025 0.30 0.64 0.500 0.580 12.70 14.73 0.045 0.060 1.14 1.52 0.190 0.210 4.83 5.33 0.100 0.135 2.54 3.43 0.080 0.115 2.04 2.92 0.045 0.055 1.14 1.39 0.230 0.270 5.84 6.86 ----- 0.050 ----- 1.27 0.045 ----- 1.15 ----- V L NOTE Φ MCCSEMI.COM MCP04N80 Electrical Characteristics @ 25°C (Unless Otherwise Noted) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250µA 800 V VGS =±30V Gate-Source Leakage Current IGSS Zero Gate Voltage Drain Current IDSS Gate-Source Threshold Voltage VGS(th) VDS=VGS, ID=250µA Drain-Source On-Resistance (Note3) RDS(on) VGS=10V, ID=2A 1 gFS VDS=10V, ID=2A 5 Forward Tranconductance(Note 3) ±100 VDS=800V, VGS=0V,TJ=25°C 1 VDS=800V, VGS=0V,TJ=150°C 100 2.5 nA µA 4.5 V 1.2 Ω S Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 4 Total Gate Charge Qg 13 Gate-Source Charge Qgs Gate-Drain Charge Qgd 3 Turn-On Delay Time td(on) 39 Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time 598 VDS=50V,VGS=0V,f=1MHz VDD=640V,VGS=10V,ID=4A VDD =400V, ID=4A,RG=25Ω tf pF 30 nC 4.5 25 ns 100 18 Drain-Source Body Diode Characteristics Continuous Body Diode Current IS Pulsed Diode Forward Current ISM Body Diode Voltage VSD Reverse Recovery Time trr Reverse Recovery Charge Qrr Peak Reverse Recovery Current Irrm 4 TC=25°C 12 TJ=25°C,ISD=4A, VGS=0V VR=400V, IF=IS,diF/dt=100A/μs 0.9 1.2 A V 250 ns 2.1 µC 16 A Notes: 1.Pulse Width Limited by Maximum Junction Temperature. 2.L=20mH,IL=4A,VDD=50V, VGS=10V,RG=25Ω,Starting TJ=25°C 3. Pulse Test : Pulse Width≤300μs, Duty Cycle ≤2%. Rev.3-2-12012020 2/4 MCCSEMI.COM MCP04N80 Curve Characteristics Fig. 1 - Output Characteristics Fig. 2 - Transfer Characteristics 9 12 TA=25°C Pulsed 10 VDS= 10V Pulesd VGS=20V,10V,8V 6 Drain Current (A) Drain Current (A) TJ=25°C 8 VGS=7.0V 4 6 TJ=150°C 3 VGS=6.0V 2 VGS=5.0V 0 0 5 10 15 0 20 0 2 TJ=25°C VGS=10V 10 10 Source Current (A) Drain-Source On-Resistance (Ω) 8 100 1.3 1.2 1.1 1.0 TJ=150°C 1 TJ=25°C 0.1 0.01 0.9 0.8 0 1 2 0.001 0.2 4 3 0.4 Fig. 5 - RDS(ON)—Temperature 3.0 0.8 1.0 1.2 1.4 Fig. 6 - Threshold Voltage —Temperature 0.6 VGS=10V ID=2A 0.4 0.2 Threshold Voltage (V) 2.5 0.6 Source to Drain Voltage (V) Drain Current (A) Normalized On-Resistance 6 Fig. 4 - IS—VSD Fig. 3 - RDS(ON)—ID 1.5 1.4 4 Gate to Source Voltage (V) Drain to Source Voltage (V) 2.0 1.5 1.0 0.0 ID= 250μA -0.2 -0.4 -0.6 -0.8 0.5 -1.0 0.0 -100 -50 0 50 100 150 200 -50 0 50 100 150 200 Junction Temperature (°C) Temperature (°C) Rev.3-2-12012020 -1.2 -100 3/4 MCCSEMI.COM MCP04N80 Ordering Information Device Packing Part Number-BP Bulk:50pcs/Tube,1Kpcs/Box,5Kpcs/Carton Note : Adding "-HF" Suffix For Halogen Free, eg. 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