MCPF07N65-BP

MCPF05N80 Features • • • Fast Switching Improved dv/dt Capability Epoxy Meets UL 94 V-0 Flammability Rating • Moisture Sensitivity Level 1 • • Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) N-CHANNEL MOSFET Maximum Ratings • Operating Junction Temperature Range : -55°C to +150°C • Storage Temperature Range: -55°C to +150°C • Thermal Resistance: 62.5°C/W Junction to Ambient • Thermal Resistance: 5°C/W Junction to Case(Note 1) Parameter TO-220F Symbol Rating Unit Drain-Source Voltage VDS 800 V Gate-Source Volltage VGS ±30 V Continuous Drain Current ID 5 A Pulsed Drain Current (Note1) IDM 20 A EAS 151 mJ IAS 5.5 A EAR 90 mJ PD 25 W Single Pulse Avalanche Energy Avalanche Current (Note 2) (Note1) Repetitive Avalanche Energy (Note1) Total Power Dissipation A M B N C D 1 2 3 F P J Q E H Note: 1.Repetitive Rating: Pulse Width Limited by Maximum Junction G Temperature. 2.IAS=3A, VDD=50V, RG=25 Ω, Starting TJ=25°C. Internal Structure DIM A B C D E F G H J M N P Q D G S Rev.3-3-12012020 1. Gate 2. Drain 3. Source 1/4 DIMENSIONS INCHES MM MIN MAX MIN MAX 0.392 0.421 9.96 10.70 0.138 3.50 0.106 2.70 0.567 0.642 14.40 16.30 0.520 13.20 --0.177 --4.50 0.100 2.54 0.020 0.035 0.50 0.90 0.043 0.053 1.10 1.35 0.169 0.201 4.30 5.10 --0.140 --3.56 0.083 0.126 2.10 3.20 0.020 0.032 0.50 0.80 NOTE Φ TYP. TYP. TYP. MCCSEMI.COM MCPF05N80 Electrical Characteristics @ 25°C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics V(BR)DSS VGS=0V, ID=250µA Gate-Source Leakage Current IGSS VDS=0V, VGS =±30V ±100 IDSS VDS=800V, VGS=0V 1 Zero Gate Voltage Drain Current Drain-Source Breakdown Voltage 800 V µA VDS=640V, VGS=0V, TJ=25°C Gate-Threshold Voltage VGS(th) VDS=VGS, ID=250µA Drain-Source On-Resistance(Note 3) RDS(on) VGS=10V, ID=2.5A nA 100 3 2.3 4 V 2.8 Ω Dynamic Characteristics(Note 4) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 14 Total Gate Charge Qg 27 Gate-Source Charge Qgs Gate-Drain Charge Qgd 13 Turn-On Delay Time td(on) 37 Turn-On Rise Time tr Turn-Off Delay Time td(off) 144 tf 41 Turn-Off Fall Time 667 VDS=25V,VGS=0V,f=1MHz VDD=640V,VGS=10V,ID=5A VDD =400V, ID=5A,RG=25Ω pF 77 nC 3.5 15 ns Drain-Source Body Diode Characteristics Continuous Body Diode Current IS Pulsed Diode Forward Current ISM Body Diode Voltage VSD Reverse Recovery Time trr Reverse Recovery Charge Qrr 5 TC=25°C A 20 ISD=2.5A, VGS=0V VGS=0V, IS=5A,diF/dt=100A/μs 1.4 V 1099 ns 3.2 µC Note 3. Pulse Test : Pulse Width≤300μs, Duty Cycle ≤ 1%. 4. Guaranteed by Design, Not Subject to Production Testing. Rev.3-3-12012020 2/4 MCCSEMI.COM MCPF05N80 Curve Characteristics Fig. 2 - Transfer Characteristics Fig. 1 - Typical Output Characteristics 5 6 20V 10V 5 4 4 Drain Current (A) Drain Current (A) 8V 7V 3 6V TJ=25°C 3 TJ=150°C 2 2 VGS=5V 1 1 0 0 0 4 8 12 16 0 20 2 4 Drain To Source Voltage (V) 8 10 Fig. 4 - Gate Charge Characteristics Fig. 3 - Capacitance Characteristics 10 10000 Gate-Source Voltage (V) Ciss 1000 Capacitance (pF) 6 Gate To Source Voltage (V) Coss 100 Crss 8 6 4 10 2 0 1 0 10 20 30 0 40 5 10 15 20 25 30 Drain To Source Voltage (V) Total Gate Charge(nC) Fig. 5 - IS—VSD Fig. 6 - Normalized On Resistance Characteristics 3.0 10 VGS=10V ID=5A Source Current (A) 1 Normalized On Resistance 2.5 TJ=150°C TJ=25°C 0.1 2.0 1.5 1.0 0.01 0.5 1E-3 0.2 0.4 0.6 0.8 1.0 0.0 -50 1.2 Source To Drain Voltage (V) Rev.3-3-12012020 -25 0 25 50 75 100 125 150 Junction Temperature(°C) 3/4 MCCSEMI.COM MCPF05N80 Ordering Information Device Packing Part Number-BP Bulk:50pcs/Tube,1Kpcs/Box,5Kpcs/Carton Note : Adding "-HF" Suffix For Halogen Free, eg. 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