MCQ4410-TP

MCQ4410 Features • • • • Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) N-Channel Enhancement Mode Field Effect Transistor Maximum Ratings • Operating Junction Temperature Range: -55°C to +150°C • Storage Temperature Range: -55°C to +150°C • Thermal Resistance: 89°C/W Junction to Ambient Parameter Symbol Rating Unit Drain -Source Voltage VDS 30 V Gate -Source Voltage VGS ±12 V ID 7.5 A Single Pulsed Avalanche Energy(Note1) EAS 72 mJ Pulsed Drain Current IDM 50 A Power Dissipation PD 1.4 W Drain Current-Continuous Notes : SOP-8 B D A C F E K H J 1.EAS condition: VDD=50V,L=0.5mH, RG=25Ω, Starting TJ = 25°C G Internal Structure D D 7 6 5 1 2 3 4 S S S DIM D D 8 G A B C D E F G H J K θ Marking: Q4410 DIMENSIONS INCHES MM MIN MAX MIN MAX 0.053 0.069 1.35 1.75 0.004 0.010 0.10 0.25 0.053 0.061 1.35 1.55 0.013 0.020 0.33 0.51 0.007 0.010 0.17 0.25 0.185 0.200 4.70 5.10 0.050 1.270 0.228 0.244 5.80 6.20 0.150 0.157 3.80 4.00 0.016 0.050 0.40 1.27 0° 8° 0° 8° NOTE TYP. Suggested Solder Pad Layout 4.61mm 6.50mm 1.50mm 1.27mm Rev.3-2-12012020 1/4 0.80mm MCCSEMI.COM MCQ4410 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Static Characteristics V(BR)DSS VGS=0V, ID=250µA 30 Gate-Threshold Voltage(Note1) VGS(th) VDS=VGS, ID=250µA 1.0 Gate-Body Leakage Current IGSS VGS=± 12V, VDS=0V Zero Gate Voltage Drain Current IDSS VDS=30V, VGS=0V Drain-Source Breakdown Voltage Drain-Source On-Resistance(Note1) Forward Transconductance(Note1) RDS(on) gFS V 1.3 3.0 V ±100 nA 1 VGS=10V, ID=10A 9.0 13.5 VGS=4.5V, ID=5.0A 12 20 VDS=15V, ID=5.0A 8.0 µA mΩ S Dynamic Characteristics(Note2) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 9130 VDS=15V,VGS=0V, f=1MHz pF 625 387 Switching Characteristics(Note2) Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) 60 Turn-Off Fall Time tf 25 Total Gate Charge Qg 40 Gate-Source Charge Qgs Gate-Drain Charge Qgd 15 VDD=25V,VGS=10V, ID=1A , RGEN=6Ω,RL=25Ω VDS=15V,ID=10A,VGS=10V 15 ns nC 5.5 3.7 Source-Drain Diode characteristics 1.1 V IS 7.5 A ISM 50 A Diode Forward voltage(Note1) VSD Drain-Source Diode Forward Current Pulsed drain-source diode forward current VGS=0V,IS=2.3A Notes: 1.Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 2.Guaranteed by design, not subject to production testing. Rev.3-2-12012020 2/4 MCCSEMI.COM MCQ4410 Curve Characteristics )LJ2XWSXW&KDUDFWHULVWLFV Fig. 2 - Transfer Characteristics  9*6 9 7$ ƒ& 3XOVHG 9*6 9 VDS= 5V Pulesd 16  9*6 9 Drain Current (A) 'UDLQ&XUUHQW$  20  9*6 9  12 8 TA=100°C 4  TA=25°C 9*6 9        0  0 1 'UDLQWR6RXUFH9ROWDJH9 Fig. 3 - RDS(ON)—ID 3 5 4 Fig. 4 - RDS(ON)—VGS 40 40 TA=25°C Pulsed TA=25°C Drain-Source On-Resistance (mΩ) Drain-Source On-Resistance (mΩ) 2 Gate to Source Voltage (V) 30 20 VGS=4.5V 10 VGS=10V 0 30 ID=10A 20 10 0 0 5 10 15 20 25 30 0 2 4 Drain Current (A) 6 8 10 Gate to Source Voltage (V) Fig. 5 - Threshold Voltage Fig. 6 - IS—VSD 1.4 20 10 Source Current (A) Threshold Voltage (V) 1.3 ID= 250μA 1.2 1 TA=25°C 1.1 1.0 25 50 75 100 0.1 0.4 125 Junction Temperature (°C) Rev.3-2-12012020 0.6 0.8 1.0 1.2 Source to Drain Voltage (V) 3/4 MCCSEMI.COM MCQ4410 Ordering Information Device Packing Part Number-TP Tape&Reel:4Kpcs/Reel Note : Adding "-HF" Suffix For Halogen Free, eg. 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