MCQ4435-TP

MCQ4435 Features • • • • • Advanced Trench MOSFET Process Technology Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) P-Channel Power MOSFET Maximum Ratings • Operating Junction Temperature Range: -55°C to +150°C • Storage Temperature Range: -55°C to +150°C • Thermal Resistance: 89°C/W Junction to Ambient Parameter SOP-8 Symbol Rating Unit Drain -Source Voltage VDS -30 V Gate -Source Voltage VGS ±20 V Drain Current-Continuous ID -9.1 A Drain Current-Pulsed IDM -36 A Power Dissipation PD 1.4 W Single Pulsed Avalanche Energy (Note1) EAS 20 mJ B D A C F E K H J Note: 1.EAS condition: VDD=-50V,L=0.5mH, RG=25Ω, Starting TJ = 25°C G Internal Structure and Marking Code DIM D 8 D 7 D D 5 6 8 7 6 A B C D E F G H J K θ 5 Q4435 .GL 1 S 2 S 3 S 4 1 2 3 4 G DIMENSIONS INCHES MM MIN MAX MIN MAX 0.053 0.069 1.35 1.75 0.004 0.010 0.10 0.25 0.053 0.061 1.35 1.55 0.013 0.020 0.33 0.51 0.007 0.010 0.17 0.25 0.185 0.200 4.70 5.10 0.050 1.270 0.228 0.244 5.80 6.20 0.150 0.157 3.80 4.00 0.016 0.050 0.40 1.27 0° 8° 0° 8° NOTE TYP. Suggested Solder Pad Layout 4.61mm 6.50mm 1.50mm 1.27mm Rev.3-3-04092022 1/4 0.80mm MCCSEMI.COM MCQ4435 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Static Characteristics V(BR)DSS VGS=0V, ID=-250µA -30 Gate-Threshold Voltage(Note1) VGS(th) VDS=VGS, ID=-250µA -1.0 Gate-Body Leakage Current IGSS Zero Gate Voltage Drain Current IDSS Drain-Source Breakdown Voltage Drain-Source On-Resistance(Note1) Forward Transconductance(Note1) RDS(on) gFS V -3.0 V VGS=± 20V, VDS=0V ±100 nA VDS=-30V, VGS=0V -1 µA -1.5 VGS=-10V, ID=-9.1A 14 24 VGS=-4.5V, ID=-6.9A 23 35 VDS=-10V, ID=-9.1A 20 mΩ S Dynamic Characteristics(Note2) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 1350 VDS=-15V,VGS=0V, f=1MHz pF 215 185 Switching Characteristics(Note2) Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time tf Gate Resistance Rg Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 15 15 VDD=-15V,ID=-1.0A,VGS=-10V , RGEN=1Ω,, RL=15Ω 70 nS 25 VDS=0V,VGS=0V, f=1MHz 5.8 Ω 50 VDS=-15V, ID=-9.1A,VGS=-10V 25 VDS=-15V, ID=-9.1A,VGS=-4.5V nC 4.0 7.5 Drain-Source Diode Characteristics Diode Forward Voltage(Note1) VSD Continuous Drain-Source Diode Forward Current Pulsed Drain-Source Diode Forward Current -1.2 V IS -9.1 A ISM -36 A VGS=0V,IS=-2A Note: 1.Pulse Test : Pulse Width≤300μs, duty cycle ≤2%. 2.Guaranteed by design, not subject to production testing. Rev.3-3-04092022 2/4 MCCSEMI.COM MCQ4435 Curve Characteristics Fig. 1 - Output Characteristics -24 TA=25°C Pulsed Fig. 2 - Transfer Characteristics -24 VGS=-3.0V,-3.5V,-4.0V,-4.5V -18 Drain Current (A) Drain Current (A) -18 VDS= -10V Pulesd TA=25°C -12 VGS=-2.5V -6 -12 -6 VGS=-2.0V -0 -0 -2 -4 -6 -8 -0 -10 -0 -3 Fig. 3 - RDS(ON)—ID Fig. 4 - RDS(ON)—VGS 80 TA=25°C Pulsed Drain-Source On-Resistance (mΩ) Pulsed 60 40 VGS=-4.5V 20 VGS=-10V 0 -0 -2 -4 -6 -8 TA=25°C 60 40 ID=-9.1A 20 0 -10 -0 -2 Drain Current (A) -4 -6 -8 -10 Gate to Source Voltage (V) Fig. 6 - IS—VSD Fig. 5 - Threshold Voltage -1.6 -2 Pulsed TA=25°C -1 -1.5 Source Current (A) Threshold Voltage (V) -4 Gate to Source Voltage (V) 80 Drain-Source On-Resistance (mΩ) -2 -1 Drain to Source Voltage (V) -1.4 ID= -250μA -0.1 -0.01 -1.3 -1.2 25 50 75 100 -0.001 -0.2 125 Junction Temperature (°C) Rev.3-3-04092022 -0.4 -0.6 -0.8 -1.0 Source to Drain Voltage (V) 3/4 MCCSEMI.COM MCQ4435 Ordering Information Device Packing Part Number-TP Tape&Reel:4Kpcs/Reel Note : Adding "-HF" Suffix For Halogen Free, eg. 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