MCQ4438-TP

MCQ4438 Features • • Trench Power MOSFET Epoxy Meets UL 94 V-0 Flammability Rating • • Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Moisture Sensitivity Level 1 • N-CHANNEL MOSFET Maximum Ratings • Operating Junction Temperature Range : -55°C to +150°C • Storage Temperature Range: -55°C to +150°C • Thermal Resistance: 100°C/W Junction to Ambient Parameter SOP-8 Symbol Rating Unit Drain-Source Voltage VDS 60 V Gate-Source Volltage VGS ±20 V Continuous Drain Current ID 8.2 A Pulsed Drain Current IDM 40 A Total Power Dissipation PD 1.25 W Single Pulsed Avalanche Energy EAS 113 mJ 8 D 8 D 7 7 6 S 2 S 3 K J G 5 S 4 G 1 2 E 5 DIM Q8 1 F D D 6 A C H Internal Structure and Marking Code B D 3 A B C D E F G H J K θ 4 DIMENSIONS INCHES MM MIN MAX MIN MAX 0.053 0.069 1.35 1.75 0.004 0.010 0.10 0.25 0.053 0.061 1.35 1.55 0.013 0.020 0.33 0.51 0.007 0.010 0.17 0.25 0.185 0.200 4.70 5.10 0.050 1.270 0.228 0.244 5.80 6.20 0.150 0.157 3.80 4.00 0.016 0.050 0.40 1.27 0° 8° 0° 8° NOTE TYP. Suggested Solder Pad Layout 4.61mm 6.50mm 1.50mm 1.27mm Rev.3-4-06022022 1/4 0.80mm MCCSEMI.COM MCQ4438 Electrical Characteristics @ 25°C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics V(BR)DSS VGS=0V, ID=250µA Gate-Source Leakage Current IGSS VDS=0V, VGS =±20V Zero Gate Voltage Drain Current IDSS VDS=60V, VGS=0V Drain-Source Breakdown Voltage Gate-Threshold Voltage VGS(th) Drain-Source On-Resistance RDS(on) 60 V ±100 nA 1 µA 3 V VGS=10V, ID=8.2A 22 mΩ VGS=4.5V, ID=7.6A 36 mΩ VDS=VGS, ID=250µA Forward Tranconductance gfs VDS=5V, ID=8.2A Diode Forward Voltage VSD VGS=0V, IS=1A Gate Resistance RG f=1MHz, Open Drain 1 10 S 1 V Ω 1.1 Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge(10V) Qg Total Gate Charge(4.5) Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 14.4 Turn-On Delay Time td(on) 8.2 Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time tf Reverse Recovery Time trr Reverse Recovery Charge Qrr Rev.3-4-06022022 2300 VDS=30V,VGS=0V,f=1MHz pF 155 116 58 VDS=30V,VGS=10V,ID=8.2A VGS=10V,VDS=30V, RL=3.6Ω, RGEN=3Ω 30 6 5.5 29.7 nC ns 5.2 IS=20A,di/dt=500A/μs 2/4 22 ns 11.4 nC MCCSEMI.COM MCQ4438 Curve Characteristics Fig. 1 - Typical Output Characteristics Fig. 2 - Transfer Characteristics 20 20 5.5, 5, 4.5,V VDS=5V Pulesd 4V 16 12 Drain Current (A) Drain Current (A) 16 3.5V 8 4 0 12 8 4 VGS=3V 0 1 2 3 4 0 5 0 1 2 Drain To Source Voltage (V) Fig. 3 - RDS(ON)—ID 50 Drain-Source On-Resistance (mΩ) Drain-Source on Resistance (mΩ) 5 6 80 40 30 VGS=4.5V 20 VGS=10V 10 0 2 4 6 8 70 60 50 40 30 20 10 0 10 0 2 4 Drain Current(A) 10 Source Current (A) 1 1.7 ID= 250μA 1.6 50 75 100 125 0.1 25°C 0.01 0.001 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Source To Drain Voltage (V) Junction Temperature (°C) Rev.3-4-06022022 8 Fig. 6 - IS—VSD Fig. 5 - Threshold Voltage 1.5 25 6 Gate To Source Voltage (V) 1.8 Threshold Voltage (V) 4 Fig. 4 - RDS(ON)—VGS 60 0 3 Gate To Source Voltage (V) 3/4 MCCSEMI.COM MCQ4438 Ordering Information Device Packing Part Number-TP Tape&Reel: 4Kpcs/Reel Note : Adding "-HF" Suffix for Halogen Free, eg. 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