MCU10N10-TP

MCU10N10 Features • • • • Ultra Low Gate Charge Low Reverse Transfer Capacitance Fast Switching Capability Epoxy Meets UL 94 V-0 Flammability Rating • Moisture Sensitivity Level 1 • • Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) N-CHANNEL MOSFET Maximum Ratings • Operating Junction Temperature Range : -55°C to +150°C • Storage Temperature Range: -55°C to +150°C • Thermal Resistance: 100°C/W Junction to Ambient DPAK(TO-252) J H Parameter Symbol Rating Unit Drain-Source Voltage VDS 100 V Gate-Source Volltage VGS ±20 V Continuous Drain Current ID 9.6 A Pulsed Drain Current IDM 38.4 A Single Pulsed Avalanche Energy(Note1) EAS 150 mJ 1 C O 4 2 I F E 3 V K M Q A G L Note 1. IL=7A, VDD=50V, RG=25Ω,Starting TJ=25°C D 1. Gate 2,4. Drain 3. Source Internal Structure DIM D A B C D E F G H I J K L M O Q V G S Rev.3-2-12012020 B 1/4 DIMENSIONS INCHES MM MIN MAX MIN MAX 0.087 0.094 2.20 2.40 0.000 0.005 0.00 0.13 0.026 0.034 0.66 0.86 0.018 0.023 0.46 0.58 0.256 0.264 6.50 6.70 0.201 0.215 5.10 5.46 0.190 4.83 0.236 0.244 6.00 6.20 0.086 0.094 2.18 2.39 0.386 0.409 9.80 10.40 0.114 2.90 0.055 0.067 1.40 1.70 0.063 1.60 0.043 0.051 1.10 1.30 0.000 0.012 0.00 0.30 0.211 5.35 NOTE TYP. TYP. TYP. TYP. MCCSEMI.COM MCU10N10 Electrical Characteristics @ 25°C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250µA Zero Gate Voltage Drain Current IDSS VDS =100V, VGS =0V 1 µA Gate-Source Leakage Current IGSS VDS =0V, VGS =±20V ±100 nA Gate-Threshold Voltage VGS(th) VDS=VGS, ID=250µA 2 2.5 V Drain-Source On-Resistance RDS(on) VGS=10V, ID=5A 0.115 0.14 Ω 100 V On Characteristics(Note 2) 1.2 Dynamic Characteristics(Note 3) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 90 Turn-On Delay Time td(on) 11 Turn-On Rise Time tr Turn-Off Delay Time td(off) 690 VDS=25V,VGS=0V,f =1MHz pF 120 Switching Characteristics(Note 3) VDD=30V, RG=2.5Ω, ID=2A, VGS=10V 7.4 Turn-Off Fall Time tf 9.1 Total Gate Charge Qg 15.5 Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=30V, ID=3A,VGS=10V ns 35 nC 3.2 4.7 Drain-Source Diode Characteristics and Maximum Ratings Continuous Drain-Source Diode Forward Current IS Pulsed Drain-Source Diode Forward Current ISM Diode Forward Voltage(Note 2) VSD 9.6 A 38.4 VGS=0V, IS=9A 1.2 V Note: 2. Pulse Test : Pulse Width≤300μs, Duty Cycle≤2%. Rev.3-2-12012020 2/4 MCCSEMI.COM MCU10N10 Curve Characteristics Fig. 1 - Output Charact eristics Fig. 2 - Transfer Characteristics 100 100 VDS= 10V Pulesd VGS=8V TA=25°C Pulsed VGS=6V Drain Current (A) Drain Current (A) VGS=4V 10 VGS=3V 1 10 TA=25°C 1 VGS=2.5V 0.1 0.1 1 10 0.1 2.0 100 2.5 3.0 Fig. 3 - RDS(ON)—ID 4.5 5.0 500 TA=25°C Pulsed Pulsed Drain-Source On-Resistance (mΩ) Drain-Source On-Resistance (mΩ) 4.0 Fig. 4 - RDS(ON)—VGS 200 160 VGS=10V 120 80 40 0 0.1 3.5 Gate To Source Voltage (V) Drain To Source Voltage (V) 2 4 400 300 TA=100°C 200 100 TA=25°C 0 9.6 8 6 ID=5A 3 4 5 Drain Current (A) 7 6 8 9 10 Gate To Source Voltage (V) Fig. 5 - IS—VSD Fig. 6 - Threshold Voltage 4.0 9600 Pulsed 3.5 Threshold Voltage (V) Source Current (mA) 1000 TA=100°C 100 10 TA=25°C 3.0 2.5 ID= 250μA 2.0 1.5 1.0 1 0.5 0.1 0.0 0.2 0.4 0.6 0.8 1.0 0.0 25 1.2 Source To Drain Voltage (V) Rev.3-2-12012020 50 75 100 125 Junction Temperature (°C) 3/4 MCCSEMI.COM MCU10N10 Ordering Information Device Packing Part Number-TP Tape&Reel: 2.5Kpcs/Reel Note : Adding "-HF" Suffix for Halogen Free, eg. 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