MCU30N02-TP

MCU30N02 Features • • • Trench Power LV MOSFET Technology Excellent Package for Heat Dissipation High Density Cell Desihn for Low RDS(on) • Epoxy Meets UL 94 V-0 Flammability Rating • Moisture Sensitivity Level 1 • • Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) N-CHANNEL MOSFET Maximum Ratings • Operating Junction Temperature Range : -55°C to +175°C • Storage Temperature Range: -55°C to +175°C • Thermal Resistance: 5°C/W Junction to Case (Note 1) DPAK J H Parameter Symbol Rating Unit Drain-Source Voltage VDS 20 V Gate-Source Volltage VGS ±10 V 30 A 21 A Continuous Drain Current TC=25°C TC=100°C ID IDM 125 A Single Pulse Avalanche Energy (Note 3) EAS 100 mJ 30 W 15 W TC=25°C TC=100°C PD I 1.RθJA is the Sum of the Junction-to-Case and Case-to-Ambient Thermal Resistance, Where the Case Thermal Reference is Defined as the Solder Mounting Surface of the Drain Pins. RθJC is Guaranteed by Design, While Rθ JA is Determined by the Board Design. The Maximum Rating Presented Here is Based on Mounting on a 1 in 2 Pad of 2oz Copper. 2.Pulse Test: Pulse Width≤300µs,Duty Cycle ≤2%. 3.TJ=25°C, VDD=20V, VG=10V, L=0.5mH, Rg=25Ω Internal Structure D Rev.3-2-12012020 F E 3 V K M Q G DIM S 4 L Note: G O 2 A Pulsed Drain Current (Note 2) Total Power Dissipation 1 C A B C D E F G H I J K L M O Q V DIMENSIONS INCHES MM MIN MAX MIN MAX 0.087 0.094 2.20 2.40 0.000 0.005 0.00 0.13 0.026 0.034 0.66 0.86 0.018 0.023 0.46 0.58 0.256 0.264 6.50 6.70 0.201 0.215 5.10 5.46 0.190 4.83 0.236 0.244 6.00 6.20 0.086 0.094 2.18 2.39 0.386 0.409 9.80 10.40 0.114 2.90 0.055 0.067 1.40 1.70 0.063 1.60 0.043 0.051 1.10 1.30 0.000 0.012 0.00 0.30 0.211 5.35 D B NOTE TYP. TYP. TYP. TYP. 1.GATE 2.DRAIN 3.SOURCE 4.DRAIN 1/4 MCCSEMI.COM MCU30N02 Electrical Characteristics @ 25°C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics V(BR)DSS VGS=0V, ID=250µA Gate-Source Leakage Current IGSS VDS=0V, VGS =±10V Zero Gate Voltage Drain Current IDSS VDS=20V, VGS=0V Drain-Source Breakdown Voltage Gate-Threshold Voltage Drain-Source On-Resistance Diode Forward Voltage Continuous Body Diode Current VGS(th) RDS(on) VSD 20 V ±100 nA 1 µA 0.62 1 V VGS=4.5V, ID=15A 5.6 7 VGS=2.5V, ID=7A 7.1 9 VGS=1.8V, ID=3A 10 14 VGS=0V, IS=15A 0.9 1.2 V 30 A VDS=VGS, ID=250µA 0.45 IS mΩ Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 145 Total Gate Charge Qg 29 Gate-Source Charge Qgs Gate-Drain Charge Qgd Reverse Recovery Chrage Qrr Reverse Recovery Time trr 39 Turn-On Delay Time td(on) 7 Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time Rev.3-2-12012020 1700 VDS=10V,VGS=0V,f=1MHz VDS=10V,VGS=4.5V,ID=15A 305 pF 6 nC 7 IS=15A, di/dt=100A/µs VGS=4.5V,VDD=10V, ID=10A, RL=1Ω,RGEN=3Ω tf 23 35 ns 30 6 2/4 MCCSEMI.COM MCU30N02 Curve Characteristics Fig. 1 - Output Characteristics Fig. 2 - Transfer Characteristics 100 20 VDS= 5V VGS=10V,7.0V,3.5V 80 15 Drain Current (A) Drain Current (A) VGS=3.0V 60 40 10 TA=125°C 5 20 VGS=2.5V 0 0 1 2 3 4 TA=25°C 0 0.0 5 0.5 1.0 1.5 2.0 2.5 Gate to Source Voltage (V) Drain to Source Voltage (V) Fig. 4 - Gate Charge Fig. 3 - Capacitance Characteristics 3000 5 VDS= 10V Gate to Source Voltage (V) Capacitance (pF) 2400 Ciss 1800 1200 Coss 600 4 3 2 1 Crss 0 0 5 10 0 20 15 0 5 10 Drain to Source Voltage (V) Fig. 5 - RDS(ON)—ID 20 Fig. 6 - RDS(ON)—Temperature 10 2.2 8 Normalized On-Resistance Drain-Source On-Resistance (mΩ) 15 Gate Charge (nC) VGS=2.5V 6 VGS=4.5V 4 1.8 1.4 1.0 2 0 0.6 0 5 10 15 20 25 30 25 50 75 100 125 150 175 Junction Temperature (°C) Drain Current (A) Rev.3-2-12012020 0 3/4 MCCSEMI.COM MCU30N02 Ordering Information Device Packing Part Number-TP Tape&Reel: 2.5Kpcs/Reel Note : Adding "-HF" Suffix for Halogen Free, eg. 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