MCU45N10-TP

MCU45N10 Features • Split Gate Trench MOSFET Technology • Low RDS(on) & FOM • • • • • Extremely Low Switching Loss Fast Switching and Soft Recovery Halogen Free Available Upon Request By Adding Suffix "-HF" Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) N-CHANNEL MOSFET Maximum Ratings • Operating Junction Temperature Range : -55°C to +150°C • Storage Temperature Range: -55°C to +150°C • Thermal Resistance: 1.7°C/W Junction to Case (Steady-State) • Thermal Resistance: 20°C/W Junction to Ambient (t≤10s)(1) • Thermal Resistance: 50°C/W Junction to Ambient (Steady-State)(1) Parameter DPAK(TO-252) J H Symbol Rating Unit Drain-Source Voltage VDS 100 V Gate-Source Volltage VGS ±20 V Continuous Drain Current ID 45 A Pulsed Drain Current(2) IDM 180 A Total Power Dissipation(3) PD 72 W Single Pulsed Avalanche Energy(4) EAS 81 mJ 1 C O 4 2 I F E 3 V K M Q A G L 2. Repetitive rating; pulse width limited by max. junction temperature. 3. PD is based on max. junction temperature, using junction-case thermal resistance. 4. VDD=50V, RG=25Ω, L=0.5mH, IAS=25A. Internal Structure D D 1. Gate 2,4. Drain 3. Source Note: 1. The value of RΘJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The Power dissipation PDSM is based on RΘJA t≤10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B DIM A B C D E F G H I J K L M O Q V DIMENSIONS INCHES MM MIN MAX MIN MAX 0.087 0.094 2.20 2.40 0.000 0.005 0.00 0.13 0.026 0.034 0.66 0.86 0.018 0.023 0.46 0.58 0.256 0.264 6.50 6.70 0.201 0.215 5.10 5.46 0.190 4.83 0.236 0.244 6.00 6.20 0.086 0.094 2.18 2.39 0.386 0.409 9.80 10.40 0.114 2.90 0.055 0.067 1.40 1.70 0.063 1.60 0.043 0.051 1.10 1.30 0.000 0.012 0.00 0.30 0.211 5.35 NOTE TYP. TYP. TYP. TYP. G S Rev.3-2-06132021 1/5 MCCSEMI.COM MCU45N10 Electrical Characteristics @ 25°C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics V(BR)DSS VGS=0V, ID=250µA Gate-Source Leakage Current IGSS VDS=0V, VGS =±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS=100V, VGS=0V 1 µA Gate-Threshold Voltage VGS(th) VDS=VGS, ID=250µA 1.8 3 V RDS(on) VGS=10V, ID=20A 14 17 mΩ Drain-Source On-Resistance VGS=4.5V, ID=20A 17 21.5 mΩ f=1MHz, Open drain 1 Drain-Source Breakdown Voltage Gate Resistance Rg 100 1 V Ω Diode Characteristics Continuous Body Diode Current IS Diode Forward Voltage VSD Reverse Recovery Time trr Reverse Recovery Charge VGS=0V, IS=20A 40 A 1.3 V 39.8 ns Qrr 42 nC Input Capacitance Ciss 1135 Output Capacitance Coss Reverse Transfer Capacitance Crss 18 Total Gate Charge Qg 16 Gate-Source Charge Qgs Gate-Drain Charge Qgd 2.4 Turn-On Delay Time td(on) 39.2 Turn-On Rise Time tr Turn-Off Delay Time td(off) IS=20A, dIF/dt=100A/μs Dynamic Characteristics Turn-Off Fall Time Rev.3-2-06132021 VDS=50V,VGS=0V,f=1MHz VDS=50V,VGS=10V,ID=25A VGS=10V, VDD=50V,ID=25A RGEN=2.2Ω tf 399 5.6 pF nC 11 ns 53.2 15.8 2/5 MCCSEMI.COM MCU45N10 Curve Characteristics Fig. 1 - Typical Output Characteristics Fig. 2 - Transfer Characteristics 70 4.5V 6V 10V 90 60 75 Drain Current (A) Drain Current (A) 50 40 30 60 45 30 20 VGS=3.5V 125°C 15 10 25°C 0 0 1 2 3 4 0 1.0 5 1.5 2.0 3.5 4.0 2.2 30 TA=25°C Pulsed 25 2.0 Normalized On Resistance Drain-Source On-Resistance (mΩ) 3.0 Fig. 4 - Normalized On Resistance Characteristics Fig. 3 - RDS(ON)—ID 20 15 VGS=10V 10 5 0 2.5 Gate To Source Voltage (V) Drain To Source Voltage (V) 1.8 1.6 1.4 1.2 1.0 0 10 20 30 40 0.8 25 50 75 Drain Current (A) 100 125 150 Junction Temperature(°C) Fig. 5 - Capacitance Characteristics Fig. 6 - Gate Charge 10 VDS=50V IDS=25A Ciss 1000 Gate-Source Voltage (V) Capacitance (pF) Coss 100 Crss 10 8 6 4 2 1 0.1 0 1 10 100 Drain To Source Voltage (V) Rev.3-2-06132021 0 4 8 12 16 Gate Charge(nC) 3/5 MCCSEMI.COM MCU45N10 Curve Characteristics Fig. 7 - Safe Operation Area 500 RDS(on) Limited 100 Drain Current (A) 10μs 10 100μs 1ms DC 1 10ms TJ(max)=150°C TC=25°C Single Pulse 0.1 0.1 1 10 100 500 Drain-Source Voltage (V) Rev.3-2-06132021 4/5 MCCSEMI.COM MCU45N10 Ordering Information Device Packing Tape&Reel: 2.5Kpcs/Reel Part Number-TP Note : Adding "-HF" Suffix for Halogen Free, eg. 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