MCU45P03A-TP

MCU45P03A Features • • Trench Power LV MOSFET Technology High Density Cell Design for Low RDS(ON) • • • • • High Speed Switching Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF" Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) P-CHANNEL MOSFET Maximum Ratings • Operating Junction Temperature Range : -55°C to +175°C • Storage Temperature Range: -55°C to +175°C • Thermal Resistance: 2°C/W Junction to Case Parameter Symbol DPAK(TO-252) J H Rating Unit Drain-Source Voltage VDS -30 V Gate-Source Volltage VGS ±25 V Continuous Drain Current TC=25℃ TC=85℃ (1) ID -45 -32 A Total Power Dissipation PD 75 W Single Pulsed Avalanche Energy EAS 145 mJ G S Rev.3-2-04092022 1/5 E M Q A G B D 1. Gate 2,4. Drain 3. Source A B C D E F G H I J K L M O Q V MCC MCU45P03A V K DIM D F 3 Note: Internal Structure and Marking Code 4 L -175 1. Pulse Test: Pulse Width≤300µs,Duty Cycle ≤2%. O 2 I A IDM Pulsed Drain Current 1 C DIMENSIONS INCHES MM MIN MAX MIN MAX 0.087 0.094 2.20 2.40 0.000 0.005 0.00 0.13 0.026 0.034 0.66 0.86 0.018 0.023 0.46 0.58 0.256 0.264 6.50 6.70 0.201 0.215 5.10 5.46 0.190 4.83 0.236 0.244 6.00 6.20 0.086 0.094 2.18 2.39 0.386 0.409 9.80 10.40 0.114 2.90 0.055 0.067 1.40 1.70 0.063 1.60 0.043 0.051 1.10 1.30 0.000 0.012 0.00 0.30 0.211 5.35 NOTE TYP. TYP. TYP. TYP. MCCSEMI.COM MCU45P03A Electrical Characteristics @ 25°C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics V(BR)DSS VGS=0V, ID=-250µA Gate-Source Leakage Current IGSS VDS=0V, VGS =±25V ±100 nA Zero Gate Voltage Drain Current IDSS VDS=-30V, VGS=0V -1 µA -1.8 -2.8 V VGS=-20V, ID=-20A 4.8 7 VGS=-10V, ID=-15A 5.5 8 VGS=-6V, ID=-12A 6.5 12 8 13 Drain-Source Breakdown Voltage Gate-Threshold Voltage Drain-Source On-Resistance VGS(th) RDS(on) VDS=VGS, ID=-250µA VGS=-4.5V, ID=-12A -30 -1.2 V mΩ Diode Characteristics Continuous Body Diode Current IS Diode Forward Voltage VSD Reverse Recovery Time trr Reverse Recovery Charge Qrr VGS=0V, IS=-20A IS=-20A, dIF/dt=100A/μs -45 A -1.2 V 18 ns 7.8 nC Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 242 Total Gate Charge Qg 40 Gate-Source Charge Qgs Gate-Drain Charge Qgd 8.6 Turn-On Delay Time td(on) 8 Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time Rev.3-2-04092022 2152 VDS=-15V,VGS=0V,f=1MHz VDS=-15V,VGS=10V,ID=-12A VDD=-15V, VGS=-10V, RGEN=2.5Ω, ID=-1A tf 308 8.4 19 75 pF nC ns 46 2/5 MCCSEMI.COM MCU45P03A Curve Characteristics Fig. 1 - Typical Output Characteristics Fig. 2 - Transfer Characteristics -20 -80 -10,-4.5V -70 -16 -60 Drain Current (A) Drain Current (A) -3V -12 -8 -40 -30 -20 -4 125°C -10 VGS=-2.5V 0 -50 -1 0 -2 -3 -4 25°C 0 -1.0 -5 -1.5 -2.0 Fig. 3 - RDS(ON)—ID Normalized On Resistance Drain-Source on Resistance (mΩ) VGS=-4.5V -4.0 -4.5 -5.0 8 VGS=-10V 6 1.6 1.4 1.2 1.0 4 -20 -10 0 -30 -40 -50 0.8 25 50 Drain Current(A) 75 100 125 150 32 40 Junction Temperature(°C) Fig. 6 - Gate Charge Fig. 5 - Capacitance Characteristics -10 3500 VDS=-15V IDS=-12A Gate-Source Voltage (V) 3000 Capacitance (pF) -3.5 Fig. 4 - Normalized On Resistance Characteristics 10 Ciss 2500 2000 1500 1000 Crss 0 -5 -10 -15 -20 -25 -30 -6 -4 0 0 8 16 24 Gate Charge(nC) Drain To Source Voltage (V) Rev.3-2-04092022 -8 -2 Coss 500 0 -3.0 1.8 12 2 -2.5 Gate To Source Voltage (V) Drain To Source Voltage (V) 3/5 MCCSEMI.COM MCU45P03A Curve Characteristics Fig. 7 - Safe Operation Area -500 RDS(on) Limited 10μs Drain Current (A) -100 100μs -10 DC 1ms 10ms -1 TJ(max)=150°C TC=25°C Single Pulse -0.1 -0.1 -1 -10 -100 Drain-Source Voltage (V) Rev.3-2-04092022 4/5 MCCSEMI.COM MCU45P03A Ordering Information Device Packing Tape&Reel: 2.5Kpcs/Reel Part Number-TP Note : Adding "-HF" Suffix for Halogen Free, eg. 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