MCU60N04A-TP

MCU60N04A Features • • • Low RDSon Low Gate Charge Split Gate Trench Power MV MOSFET technology • Epoxy Meets UL 94 V-0 Flammability Rating • Moisture Sensitivity Level 1 • • Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) N-CHANNEL MOSFET Maximum Ratings DPAK • Operating Junction Temperature Range: -55°C to +150°C • Storage Temperature Range: -55°C to +150°C • Thermal Resistance: 2.15°C/W Junction to Case Parameter Symbol Rating Unit Drain -Source Voltage VDS 40 V Gate -Source Volltage VGS ±20 V Drain Current-Continuous ID 60 A Drain Current-Pulsed IDM 240 A Power Dissipation PD 70 W EAS 400 mJ Single Pulsed Avalanche Energy(Note1) J H 1 C O 4 2 I F E 3 V K M Q A G L D B Internal Structure D DIM G 1.GATE 2.DRAIN 3.SOURCE A B C D E F G H I J K L M O Q V Marking: MCU60N04A S Rev.3-2-12012020 1/4 DIMENSIONS INCHES MM MIN MAX MIN MAX 0.087 0.094 2.20 2.40 0.000 0.005 0.00 0.13 0.026 0.034 0.66 0.86 0.018 0.023 0.46 0.58 0.256 0.264 6.50 6.70 0.201 0.215 5.10 5.46 0.190 4.83 0.236 0.244 6.00 6.20 0.086 0.094 2.18 2.39 0.386 0.409 9.80 10.40 0.114 2.90 0.055 0.067 1.40 1.70 0.063 1.60 0.043 0.051 1.10 1.30 0.000 0.012 0.00 0.30 0.211 5.35 NOTE TYP. TYP. TYP. TYP. MCCSEMI.COM MCU60N04A ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Static Characteristics V(BR)DSS VGS=0V, ID=250µA 40 Gate-Threshold Voltage(Note2) VGS(th) VDS=VGS, ID=250µA 0.9 Gate-Body Leakage Current IGSS VGS =± 20V, VDS =0V Zero Gate Voltage Drain Current IDSS VDS =40V, VGS =0V Drain-Source Breakdown Voltage Drain-Source On-Resistance(Note2) Forward Transconductance(Note2) RDS(on) gFS V 1.3 2.0 V ±100 nA 1 µA mΩ VGS=10V, ID=20A 5.4 7.0 VGS=4.5V, ID=20A 6.8 9.6 VDS=25V, ID=20A S 24 Dynamic Characteristics(Note3) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 170 Total Gate Charge Qg 27 Gate-Source Charge Qgs Gate-Drain Charge Qgd 6.0 Turn-on Delay Time td(on) 6.7 Turn-on Rise Time tr Turn-off Delay Time td(off) 1650 VDS=20V,VGS=0V, f=1MHz pF 240 Switching Characteristics(Note3) Turn-off Fall Time VDS=20V,VGS=10V,ID=20A VDD=20V,VGS=10V,RG=3Ω, ID=2A，RL=1Ω, tf Nc 4.2 17.8 ns 26.3 15.6 Drain-Source Diode Characteristics Drain-Source Diode Forward Voltage(Note 2) VSD Continuous Drain-Source Diode Forward Current IS Pulsed Drain-Source Diode Forward Current ISM VGS=0V,IS=20A 1.2 V 60 A 240 A Notes: 1. 2. 3. EAS Condition: VDD=50V,VG=10V, RG=25Ω, Starting TJ = 25°C Pulse Test : Pulse Width≤300µs, duty cycle ≤2%. Guaranteed by Design, Not Subject to Production. Rev.3-2-12012020 2/4 MCCSEMI.COM MCU60N04A Curve Characteristics Fig. 2 - Transfer Characteristics Fig. 1 - Output Characteristics 100 140 TA=25°C Pulsed 120 VDS= 5V Pulesd VGS=10V,6V,5V,4V 80 Drain Current (A) Drain Current (A) 100 VGS=3.5V 80 60 60 40 TA=100°C 40 0 20 VGS=3.0V 20 0 1 2 3 4 TA=25°C 0 5 2 0 18 TA=25°C Pulsed 14 ID=20A Drain-Source On-Resistance (mΩ) Drain-Source On-Resistance (mΩ) 16 12 10 VGS=4.5V 6 VGS=10V 4 2 5 10 15 20 25 TA=100°C 6 TA=25°C 3 3 4 5 6 7 8 9 10 Fig. 6 - Threshold Voltage 2.5 2.0 Threshold Voltage (V) Source Current (A) 9 Fig. 5 - IS—VSD TA=100°C 1 0.1 TA=25°C 0.01 0.2 0.4 0.6 0.8 1.5 ID= 250μA 1.0 0.5 1.0 1.2 0.0 25 1.4 Source to Drain Voltage (V) Rev.3-2-12012020 12 Gate to Source Voltage (V) 10 0.001 0.0 15 0 30 Drain Current (A) 100 6 Fig. 4 - RDS(ON)—VGS Fig. 3 - RDS(ON)—ID 8 4 Gate to Source Voltage (V) Drain to Source Voltage (V) 50 75 100 125 Junction Temperature (°C) 3/4 MCCSEMI.COM MCU60N04A Ordering Information Device Packing Part Number-TP Tape&Reel:2.5Kpcs/Reel Note : Adding "-HF" Suffix For Halogen Free, eg. 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