MCU65N10Y-TP

MCU65N10Y Features • Low RDS(on) & FOM • • • • • • • Extremely Low Switching Loss Excellent Stability and Uniformity Fast Switching and Soft Recovery Halogen Free. “Green” Device Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) N-CHANNEL MOSFET Maximum Ratings • Operating Junction Temperature Range : -55°C to +150°C • Storage Temperature Range: -55°C to +150°C • Thermal Resistance: 1.3°C/W Junction to Case(Steady-State) • Thermal Resistance: 20°C/W Junction to Ambient (t≤10s)(1) • DPAK(TO-252) J H Thermal Resistance: 55°C/W Junction to Ambient (Steady-State) Parameter (1) Symbol Rating Unit Drain-Source Voltage VDS 100 V Gate-Source Volltage VGS ±20 V 65 A 41 A Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current(2) IDM 260 A Total Power Dissipation(3) PD 96 W Single Pulsed Avalanche Energy(4) EAS 169 mJ 1. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The Power dissipation PDSM is based on RθJA t≤10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. 2. Repetitive rating; pulse width limited by max. junction temperature. 3. PD is based on max. junction temperature, using junction-case thermal resistance. 4. VDD=50V, RG=25Ω, L=0.5mH. Internal Structure and Marking Code D MCC. MCU65N10Y O 4 2 I F E 3 V K M Q A G L B D 1. Gate 2,4. Drain 3. Source DIM Note: 1 C A B C D E F G H I J K L M O Q V DIMENSIONS INCHES MM MIN MAX MIN MAX 0.087 0.094 2.20 2.40 0.000 0.005 0.00 0.13 0.026 0.034 0.66 0.86 0.018 0.023 0.46 0.58 0.256 0.264 6.50 6.70 0.201 0.215 5.10 5.46 0.190 4.83 0.236 0.244 6.00 6.20 0.086 0.094 2.18 2.39 0.386 0.409 9.80 10.40 0.114 2.90 0.055 0.067 1.40 1.70 0.063 1.60 0.043 0.051 1.10 1.30 0.000 0.012 0.00 0.30 0.211 5.35 NOTE TYP. TYP. TYP. TYP. G S Rev.3-4-10152022 1/5 MCCSEMI.COM MCU65N10Y Electrical Characteristics @ 25°C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics V(BR)DSS VGS=0V, ID=250µA Gate-Source Leakage Current IGSS VDS=0V, VGS =±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS=100V, VGS=0V 1 µA Gate-Threshold Voltage VGS(th) VDS=VGS, ID=250µA 1.8 2.5 V Drain-Source On-Resistance RDS(on) VGS=10V, ID=20A 7.5 8.6 mΩ VGS=4.5V, ID=20A 9 11.5 mΩ Drain-Source Breakdown Voltage Gate Resistance Rg f=1MHz, Open drain 100 1.3 V 0.68 Ω Diode Characteristics Continuous Body Diode Current IS Diode Forward Voltage VSD Reverse Recovery Time trr Reverse Recovery Charge Qrr VGS=0V, IS=20A IS=20A, dIF/dt=100A/μs 65 A 1.3 V 51.5 ns 64 nC Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 36 Total Gate Charge Qg 32 Gate-Source Charge Qgs Gate-Drain Charge Qgd 4.78 Turn-On Delay Time td(on) 9.3 Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time Rev.3-4-10152022 2270 VDS=50V,VGS=0V,f=1MHz VDS=50V,VGS=10V,ID=25A VGS=10V, VDD=50V,ID=25A RGEN=2.2Ω tf 797 11.1 34.8 24.6 pF nC ns 71 2/5 MCCSEMI.COM MCU65N10Y Curve Characteristics Fig. 1 - Typical Output Characteristics 4.5V 6V 10V 60 120 Drain Current (A) 50 Drain Current (A) Fig. 2 - Transfer Characteristics 150 70 40 30 20 90 60 VGS=3.5V 125°C 30 25°C 10 0 0 1 2 3 4 0 5 0 1 2 3 4 5 6 7 Gate To Source Voltage (V) Drain To Source Voltage (V) Fig. 4 - Normalized On Resistance Characteristics Fig. 3 - RDS(ON)—ID 2.0 15 Normalized On Resistance Drain-Source on Resistance (mΩ) VGS=10V 12 VGS=4.5V 9 VGS=10V 6 3 0 IDS=20A 1.8 1.6 1.4 1.2 1.0 0 20 40 60 80 100 0.8 25 50 75 Drain Current(A) Fig. 5 - Capacitance Characteristics 125 150 Fig. 6 - Gate Charge 10 10000 VDS=50V IDS=25A 1000 Gate-Source Voltage (V) Ciss Capacitance (pF) 100 Junction Temperature(°C) Coss 100 8 6 4 2 Crss 10 0 0 20 40 60 80 100 Drain To Source Voltage (V) Rev.3-4-10152022 3/5 0 4 8 12 16 20 24 28 32 Gate Charge(nC) MCCSEMI.COM MCU65N10Y Curve Characteristics Fig. 7 - Safe Operation Area 1000 10μs Drain Current(A) 100 RDS(on) Limited 100μs 10 DC 1ms 10ms 1 TJ(max)=150°C TC=25°C Single Pulse 0.1 0.1 1 10 Drain-Source Voltage (V) 100 500 Fig. 8 - Normalized Transient Thermal Impedance Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM·ZθJC·RθJC RθJC=1.3°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 0.01 0.001 1E-6 Single Pulse 1E-5 1E-4 0.01 0.001 0.1 1 Pulse Width (s) Rev.3-4-10152022 4/5 MCCSEMI.COM MCU65N10Y Ordering Information Device Packing Part Number-TP Tape&Reel: 2.5Kpcs/Reel ***IMPORTANT NOTICE*** Micro Commercial Components Corp. reserves the right to make changes without further notice to any product herein to make corrections, modifications , enhancements , improvements , or other changes . 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MCC strongly encourages customers to purchase MCC parts either directly from MCC or from Authorized MCC Distributors who are listed by country on our web page cited below. Products customers buy either from MCC directly or from Authorized MCC Distributors are genuine parts, have full traceability, meet MCC's quality standards for handling and storage. MCC will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. MCC is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. Rev.3-4-10152022 5/5 MCCSEMI.COM