MCU90N06A-TP

MCU90N06A Features • • • Trench Power MV MOSFET Technology Excellent Package for Heat Dissipation High Density Cell Design for Low RDS(ON) • • • Halogen Free Available Upon Request By Adding Suffix "-HF" Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) N-CHANNEL MOSFET Maximum Ratings • Operating Junction Temperature Range : -55°C to +150°C • Storage Temperature Range: -55°C to +150°C • Thermal Resistance: 1.14°C/W Junction to Case • Thermal Resistance: 20°C/W Junction to Ambient DPAK(TO-252) J Parameter Symbol Rating Unit VDS 60 V H 1 C Drain-Source Voltage Gate-Source Volltage Continuous Drain Current Pulsed Drain Current (1) Total Power Dissipation (2) Single Pulsed Avalanche Energy(3) VGS ±20 V ID 90 A IDM 300 A PD 110 W EAS 196 mJ O 4 2 I F E 3 V K M Q A G L 1. Pulse Test: Pulse Width≤300us,Duty cycle ≤2%. Internal Structure D G S Rev.3-1-09302020 DIM A B C D E F G H I J K L M O Q V 3. TJ=25℃, VDD=55V, VG=10V, L=0.5mH. 1/5 D 1. Gate 2,4. Drain 3. Source Note: 2. The power dissipation PD is based on TJ(MAX)=150℃, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. B DIMENSIONS INCHES MM MIN MAX MIN MAX 0.087 0.094 2.20 2.40 0.000 0.005 0.00 0.13 0.026 0.034 0.66 0.86 0.018 0.023 0.46 0.58 0.256 0.264 6.50 6.70 0.201 0.215 5.10 5.46 0.190 4.83 0.236 0.244 6.00 6.20 0.086 0.094 2.18 2.39 0.386 0.409 9.80 10.40 0.114 2.90 0.055 0.067 1.40 1.70 0.063 1.60 0.043 0.051 1.10 1.30 0.000 0.012 0.00 0.30 0.211 5.35 NOTE TYP. TYP. TYP. TYP. MCCSEMI.COM MCU90N06A Electrical Characteristics @ 25°C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics V(BR)DSS VGS=0V, ID=250µA Gate-Source Leakage Current IGSS VDS=0V, VGS =±20V Zero Gate Voltage Drain Current IDSS VDS=60V, VGS=0V Drain-Source Breakdown Voltage Gate-Threshold Voltage VGS(th) Drain-Source On-Resistance RDS(on) Gate Resistance Rg 60 V ±100 nA 1 µA 1.5 2.5 V VGS=10V, ID=15A 5.6 7.2 mΩ VGS=4.5V, ID=10A 6.8 8.5 mΩ f=1MHz, Open drain 2.1 VDS=VGS, ID=250µA 1 Ω Diode Characteristics Continuous Body Diode Current IS Diode Forward Voltage VSD Reverse Recovery Time trr Reverse Recovery Charge VGS=0V, IS=15A 0.8 90 A 1.2 V 27 ns Qrr 18 nC Input Capacitance Ciss 5170 Output Capacitance Coss Reverse Transfer Capacitance Crss 155 Total Gate Charge Qg 102 Gate-Source Charge Qgs Gate-Drain Charge Qgd 20 Turn-On Delay Time td(on) 12 Turn-On Rise Time tr Turn-Off Delay Time td(off) IS=20A, dIF/dt=100A/μs Dynamic Characteristics Turn-Off Fall Time Rev.3-1-09302020 VDS=30V,VGS=0V,f=1MHz VDS=30V,VGS=10V,ID=25A VGS=10V, VDD=30V,ID=20A RGEN=3Ω tf 300 18.7 pF nC 46 ns 90 80 2/5 MCCSEMI.COM MCU90N06A Curve Characteristics Fig. 1 - Typical Output Characteristics 200 Fig. 2 - Transfer Characteristics 150 10V 6,5V 4V 120 Drain Current (A) Drain Current (A) 160 120 3.5V 80 90 60 VGS=3V 40 30 125°C 25°C 0 0 1 2 3 4 0 1.0 5 1.5 Fig. 3 - RDS(ON)—ID 3.0 3.5 4.0 Fig. 4 - Normalized On Resistance Characteristics Normalized On Resistance Drain-Source on Resistance (mΩ) 2.5 1.8 9 8 VGS=4.5V 7 VGS=10V 6 1.6 1.4 1.2 1.0 5 4 2.0 Gate To Source Voltage (V) Drain To Source Voltage (V) 0 10 20 30 40 50 60 70 80 0.8 25 50 75 100 125 150 Junction Temperature(°C) Drain Current(A) Fig. 5 - Capacitance Characteristics Fig. 6 - Gate Charge 10000 10 VDS=30V IDS=20A Gate-Source Voltage (V) Capacitance (pF) 8000 Ciss 6000 4000 2000 0 6 4 2 Crss Coss 8 0 0 10 20 30 40 50 60 Drain To Source Voltage (V) Rev.3-1-09302020 0 20 40 60 80 100 120 Gate Charge(nC) 3/5 MCCSEMI.COM MCU90N06A Curve Characteristics Fig. 7 - Safe Operation Area 1000 Drain Current (A) d ite 100 R Lim ) 10μs on ( DS 100μs 10 DC 1 0.1 0.1 1ms 100ms TJ(max)=150°C TC=25°C Single Pulse 1 10 100 Drain-Source Voltage (V) Rev.3-1-09302020 4/5 MCCSEMI.COM MCU90N06A Ordering Information Device Packing Tape&Reel: 2.5Kpcs/Reel Part Number-TP Note : Adding "-HF" Suffix for Halogen Free, eg. 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