MIP10R12P2TN-BP

MIP10R12P2TN Features • • Low Switching Losses Low Vce(sat) with Positive Temperature Coefficient • • • • • • • Including Fast & Soft Recovery Anti-parallel FWD Low Inductance Case High Short Circuit Capability(10μs) Maximum Junction Temperature 175℃ Isolated Heatsink Using DBC Technology Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) IGBT Modules 1200V 10A Applications • • • P2 Motor Drivers AC and DC Servo Drive Amplifier UPS (Uninterruptible Power Supplies) Circuit Diagram Rev.3-1-02022022 1/13 MCCSEMI.COM MIP10R12P2TN ● IGBT- Inverter Maximum Ratings Parameter Collector-Emitter Voltage Continuous Collector Current Test Conditions Rating Unit 1200 V TC=100℃, Tvjmax=175℃ 10 A Symbol VCES IC VGE=0V, IC=1mA, Tvj=25℃ Repetitive Peak Collector Current ICRM tp=1ms 20 A Gate-Emitter Voltage VGES Tvj=25℃ ±20 V TC=25℃, Tvjmax=175℃ 140 W Total Power Dissipation Ptot Electrical Characteristics Parameter Symbol Gate-Emitter Threshold Voltage VGE(th) Collector-Emitter Cut-off Current ICES Collector-Emitter Saturation Voltage VCE(sat) Test Conditions VGE=VCE, IC=0.5mA,Tvj=25℃ 6.6 V 1.0 mA 2.20 V V IC=10A,VGE=15V, Tvj=150℃ 2.25 V 0.13 μC Reverse Transfer Capacitance Cres Gate-Emitter leakage current IGES VCE=0V, VGE=20V, Tvj=25℃ Turn-On Delay Time td(on) tf 6.0 2.15 VCE=25V,VGE=0V, f=1MHz, Tvj=25℃ Fall Time 5.2 IC=10A,VGE=15V, Tvj=125℃ Cies td(off) Unit 1.85 Input Capacitance Turn-Off Delay Time Max IC=10A,VGE=15V, Tvj=25℃ Qg tr Typ VCE=1200V,VGE=0V, Tvj=25℃ Gate Charge Rise Time Min 1.0 400 VCE=600V, IC=10A, VGE=± 15V, RG=47Ω, Tvj=25℃ 50 262 Turn‐Off Energy Eoff 0.48 Turn-On Delay Time td(on) 90 Turn-Off Delay Time Fall Time td(off) tf Turn‐On Energy Eon Turn‐Off Energy Eoff SC Data ISC Rev.3-1-02022022 VCE=600V, IC=10A, VGE=± 15V, RG=47Ω, Tvj=125℃ 0.98 60 285 VCC=900V,VCEM≤1200V 2/13 mJ ns 150 1.33 0.9 Tp≤10μs,VGE=15V,Tvj=150℃, ns 140 Eon tr nA 85 Turn‐On Energy Rise Time nF 0.03 70 mJ A MCCSEMI.COM MIP10R12P2TN ● Diode- Inverter Maximum Ratings Parameter Repetitive Peak Reverse Voltage VRRM Continuous DC Forward Current IF Repetitive Peak Forward Current IFRM I2t-value Test Conditions Rating Unit 1200 V 10 A tp=1ms 20 A VR=0,tp=10ms,Tvj=125℃ 16 VR=0,tp=10ms,Tvj=150℃ 14 Symbol I2t Tvj=25℃ A2s Electrical Characteristics Parameter Forward Voltage Symbol VF Recovered Charge Qrr Peak Reverse Recovery Current Irr Reverse Recovery Energy Erec Recovered Charge Qrr Peak Reverse Recovery Current Irr Reverse Recovery Energy Rev.3-1-02022022 Erec Test Conditions Typ Max Unit IF=10A, Tvj=25℃ 2.0 2.5 V IF=10A, Tvj=125℃ 2.1 V IF=10A, Tvj=150℃ 2.1 V IF=10A, VR=600V, -diF/dt=500A/μs, Tvj=25℃ 0.90 μC 12.5 A 0.25 mJ IF=10A, VR=600V, -diF/dt=500A/μs, Tvj=125℃ 1.70 μC 10.4 A 0.50 mJ 3/13 Min MCCSEMI.COM MIP10R12P2TN ● IGBT- Brake-chopper Maximum Ratings Parameter Collector-Emitter Voltage Continuous Collector Current Test Conditions Rating Unit 1200 V TC=100℃, Tvjmax=175℃ 10 A Symbol VCES IC VGE=0V, IC=1mA, Tvj=25℃ Repetitive Peak Collector Current ICRM tp=1ms 20 A Gate-Emitter Voltage VGES Tvj=25℃ ±20 V TC=25℃, Tvjmax=175℃ 105 W Total Power Dissipation Ptot Electrical Characteristics Parameter Symbol Gate-Emitter Threshold Voltage VGE(th) Collector-Emitter Cut-off Current ICES Collector-Emitter Saturation Voltage VCE(sat) Test Conditions VGE=VCE, IC=0.3mA,Tvj=25℃ 6.6 V 1.0 mA 2.25 V V IC=10A,VGE=15V, Tvj=150℃ 2.25 V 0.13 μC Reverse Transfer Capacitance Cres Gate-Emitter leakage current IGES VCE=0V, VGE=20V, Tvj=25℃ Turn-On Delay Time td(on) tf 6.0 2.15 VCE=25V,VGE=0V, f=1MHz , Tvj=25℃ Fall Time 5.2 IC=10A,VGE=15V, Tvj=125℃ Cies td(off) Unit 1.85 Input Capacitance Turn-Off Delay Time Max IC=10A,VGE=15V, Tvj=25℃ Qg tr Typ VCE=1200V,VGE=0V, Tvj=25℃ Gate Charge Rise Time Min 1.0 400 VCE=600V, IC=10A, VGE=± 15V, RG=47Ω, Tvj=25℃ 50 262 Turn‐Off Energy Eoff 0.48 Turn-On Delay Time td(on) 90 Turn-Off Delay Time Fall Time td(off) tf Turn‐On Energy Eon Turn‐Off Energy Eoff SC Data ISC Rev.3-1-02022022 0.98 60 VCE=600V, IC=10A, VGE=± 15V, RG=47Ω, Tvj=125℃ ns 140 Eon tr nA 85 Turn‐On Energy Rise Time nF 0.03 285 mJ ns 150 1.33 0.90 Tp≤10μs,VGE=15V,Tvj=150℃, VCC=800V,VCEM≤1200V 4/13 70 mJ A MCCSEMI.COM MIP10R12P2TN ● Diode- Brake-chopper Maximum Ratings Parameter Repetitive Peak Reverse Voltage VRRM Continuous DC Forward Current IF Repetitive Peak Forward Current IFRM I2t-value Test Conditions Rating Unit 1200 V 10 A tp=1ms 20 A VR=0,tp=10ms,Tvj=125℃ 16 VR=0,tp=10ms,Tvj=150℃ 14 Symbol I2t Tvj=25℃ A2s Electrical Characteristics Parameter Forward Voltage Symbol VF Recovered Charge Qrr Peak Reverse Recovery Current Irr Reverse Recovery Energy Erec Recovered Charge Qrr Peak Reverse Recovery Current Irr Reverse Recovery Energy Rev.3-1-02022022 Erec Test Conditions Min Typ Max Unit IF=10A, Tvj=25℃ 2.0 2.5 V IF=10A, Tvj=125℃ 2.1 V IF=10A, Tvj=150℃ 2.1 V IF=10A, VR=600V, -diF/dt=500A/μs, Tvj=25℃ 0.90 μC 12.5 A 0.25 mJ IF=10A, VR=600V, -diF/dt=500A/μs, Tvj=125℃ 1.70 μC 10.4 A 0.50 mJ 5/13 MCCSEMI.COM MIP10R12P2TN ● Diode- Rectifier Maximum Ratings Parameter Test Conditions Symbol Rating Unit 1600 V Repetitive Peak Reverse Voltage VRRM Tj=25℃ Average On-state Current 50/60Hz, sine wave IF(AV) TC=100℃ 10 A Maximum RMS Current at Rectifier Output IRMSM TC=100℃ 10 A IFSM VR=0,tp=10ms,Tj=45℃ 150 A I2t VR=0,tp=10ms,Tj=45℃ 110 A2s Surge Forward Current I2t-value Electrical Characteristics Parameter Symbol Test Conditions Diode Forward Voltage VF IF=10A,Tj=150℃ Reverse Current Ir Tj=150℃,VR=1600V Min Typ Max 1.00 Unit V 1.0 mA ● NTC-Thermistor Electrical Characteristics Parameter Symbol Rated Resistance R25 Deviation of R100 ΔR/R Power Dissipation P25 B-value Rev.3-1-02022022 B25/50 Test Conditions Min Typ Max 5.0 TC=100,R100=493.3Ω kΩ 5 -5 20.0 R2=R25exp[B25/50(1/T2-1/(298.15K))] 6/13 3375 Unit % mW K MCCSEMI.COM MIP10R12P2TN ● Module Characteristics(TC=25°C unless otherwise specified) Parameter Symbol Isolation voltage Visol Maximum Junction Temperature Tjmax Operating Junction Temperature Tvj op Operating Junction Temperature Tstg Stray Inductance LCE Module Lead Resistance , Terminal to Chip Thermal Resistance Junction to Case Thermal Resistance Case to Sink Rcc’+EE’ RAA’+CC’ Rθjc RθCS Mounting Force Per Clamp F Weight of Module G Rev.3-1-02022022 Test Conditions t=1min,f=50Hz Min Typ Max 2500 V 175 ℃ -40 150 ℃ -40 125 ℃ nH 30 8.00 TC=25℃, per switch mΩ 6.00 per IGBT-inverter 1.25 1.40 per Diode-inverter 1.75 1.90 per IGBT-brake-chopper 1.25 1.40 per Diode-chopper 1.75 1.90 per Diode-rectifier 2.05 2.10 per IGBT-inverter 1.05 per Diode-inverter 1.30 per IGBT-brake-chopper 1.15 per Diode-chopper 1.30 per Diode-rectifier 1.25 per Module 0.058 25 K/W K/W 50 20 7/13 Unit N g MCCSEMI.COM MIP10R12P2TN Curve Characteristics 20 20 TVj=25℃ TVj=125℃ 16 VGE=15V 12 IC [A] Ic [A] 16 TVj=25℃ TVj=125℃ 12 8 8 4 4 0 0 0 0.5 1 1.5 2 2.5 3 6 3.5 7 8 9 10 11 12 13 VGE [V] VCE [V] Fig2.IGBT Transfer Characteristics Fig1.IGBT Output Characteristics 5 6 Eon Eoff 4.5 4 Eon Eoff 5 VCC=600V RG=47ohm VGE=±15V Tvj=125℃ 3.5 3 VCC=600V IC=10A VGE=±15V Tvj=125℃ 4 E [mJ] E [mJ] VCE=20V 2.5 3 2 2 1.5 1 1 0.5 0 0 4 8 12 16 20 IC [A] 0 50 100 150 200 250 300 350 400 450 500 Rg [ohm] Fig3.IGBT Switching Loss vs.Ic Rev.3-1-02022022 0 Fig4.IGBT Switching Loss vs.Rg 8/13 MCCSEMI.COM MIP10R12P2TN Curve Characteristics 10 25 20 Zthj-S [K/W] IC, Module IC [A] 15 1 10 5 i: ri[K/W] τi[s] RG=47ohm VGE=±15V Tvj=125℃ 0.1 0.001 0 0 200 400 600 800 1000 1200 1400 0.01 0.1 3 0.982 0.05 4 0.766 0.2 1 10 t [s] VCE [V] Fig 6. IGBT Transient Thermal Impedance Fig5. RBSOA 0.8 30 TVj=25℃ TVj=125℃ 25 VCC=600V RG=47ohm VGE=±15V Tvj=125℃ 0.7 0.6 20 0.5 E [mJ] IF [A] 1 2 0.209 0.443 0.0005 0.005 15 0.4 0.3 10 0.2 5 0.1 0 0 0.5 1 1.5 2 2.5 3 0 3.5 0 VF [V] 8 12 16 20 IF [A] Fig7.Diode Foward Characteristics Rev.3-1-02022022 4 Fig8.Diode Switching Loss(Erec) vs.IF 9/13 MCCSEMI.COM MIP10R12P2TN Curve Characteristics 0.6 10 VCC=600V IF=10A VGE=±15V Tvj=125℃ 0.5 Zthj-S [K/W] E [mJ] 0.4 0.3 1 0.2 i: 1 ri[K/W] 0.404 τi[s] 0.0005 0.1 0.1 0.001 0 0 50 100 150 200 250 300 350 400 450 500 0.01 2 0.664 0.005 0.1 3 1.174 0.05 4 0.808 0.2 1 10 t [s] RG [ohm] Fig 10. Diode Transient Thermal Impedance Fig9.Diode Switching Loss(Erec) vs.Rg 30 100000 TVj=25℃ TVj=125℃ 25 VGE=15V 20 R [Ω] Ic [A] 10000 15 10 1000 5 0 100 0 20 40 60 80 100 120 140 160 0.5 1 1.5 2 2.5 3 3.5 VCE [V] TC [℃] Fig12. IGBT-brake-Chopper output Characteristics Fig 11. NTC Temperature Characteristic Rev.3-1-02022022 0 10/13 MCCSEMI.COM MIP10R12P2TN Curve Characteristics 20 TVj=25℃ TVj=125 IF [A] 15 10 5 0 0 0.5 1 1.5 2 2.5 3 3.5 VF [V] Fig13. Diode-brake-chopper Forward Characteristics Rev.3-1-02022022 11/13 MCCSEMI.COM MIP10R12P2TN Circuit Diagram P1 P L1 L2 L3 G3 G1 T1 B NTC T2 GB U G6 EV EU NB W V G4 G2 N G5 EW Package Dimensions P2 Dimensions in mm 16.8±0.5 12±0.35 0.8±0.03 28.1±0.2 19.4±0.2 32 25.6 22.4 19.2 16 12.8 9.6 6.4 3.2 25.6 19.2 12.8 9.6 6.4 53±0.1 42.5±0.2 36.8±0.2 41±0.2 48±0.3 16.4±0.2 62.8±0.5 1.55±0.2 34±0.3 U G1 V G3 W G5 L1 L2 T1 T2 L3 P1 P +0.3 ×8.5-0 EU G2 EV G4 EW G6 N GB NB B +0.1 4.5-0 Rev.3-1-02022022 12/13 MCCSEMI.COM MIP10R12P2TN Ordering Information Device Packing Part Number-BP Bulk: 24pcs/Box ; 240pcs/Ctn ***IMPORTANT NOTICE*** Micro Commercial Components Corp. reserves the right to make changes without further notice to any product herein to make corrections, modifications , enhancements , improvements , or other changes . Micro Commercial Components Corp . does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights ,nor the rights of others . The user of products in such applications shall assume all risks of such use and will agree to hold Micro Commercial Components Corp . and all the companies whose products are represented on our website, harmless against all damages. Micro Commercial Components Corp. products are sold subject to the general terms and conditions of commercial sale, as published at https://www.mccsemi.com/Home/TermsAndConditions. ***LIFE SUPPORT*** MCC's products are not authorized for use as critical components in life support devices or systems without the express written approval of Micro Commercial Components Corporation. ***CUSTOMER AWARENESS*** Counterfeiting of semiconductor parts is a growing problem in the industry. Micro Commercial Components (MCC) is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. MCC strongly encourages customers to purchase MCC parts either directly from MCC or from Authorized MCC Distributors who are listed by country on our web page cited below. Products customers buy either from MCC directly or from Authorized MCC Distributors are genuine parts, have full traceability, meet MCC's quality standards for handling and storage. MCC will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. MCC is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. Rev.3-1-02022022 13/13 MCCSEMI.COM