MIP15R12P2TN
Features
•
•
Low Switching Losses
Low Vce(sat) with Positive Temperature Coefficient
•
•
•
•
•
•
•
Including Fast & Soft Recovery Anti-parallel FWD
Low Inductance Case
High Short Circuit Capability(10μs)
Maximum Junction Temperature 175℃
Isolated Heatsink Using DBC Technology
Epoxy Meets UL 94 V-0 Flammability Rating
Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS
Compliant. See Ordering Information)
IGBT Modules
1200V 15A
Applications
•
•
•
Motor Drivers
AC and DC Servo Drive Amplifier
UPS (Uninterruptible Power Supplies)
P2
Circuit Diagram
Rev.3-1-04162022
1/12
MCCSEMI.COM
MIP15R12P2TN
● IGBT- Inverter
Maximum Ratings
Parameter
Collector-Emitter Voltage
Continuous Collector Current
Test Conditions
Rating
Unit
1200
V
TC=100℃, Tvjmax=175℃
15
A
Symbol
VCES
IC
VGE=0V, IC=1mA, Tvj=25℃
Repetitive Peak Collector Current
ICRM
tp=1ms
30
A
Gate-Emitter Voltage
VGES
Tvj=25℃
±20
V
TC=25℃, Tvjmax=175℃
155
W
Total Power Dissipation
Ptot
Electrical Characteristics
Parameter
Symbol
Test Conditions
Gate-Emitter Threshold Voltage
VGE(th)
VGE=VCE, IC=0.5mA,Tvj=25℃
Collector-Emitter Cut-off Current
ICES
VCE=1200V,VGE=0V, Tvj=25℃
Collector-Emitter
Saturation Voltage
VCE(sat)
Min
Typ
Max
Unit
5.2
6.0
6.8
V
1
mA
2.2
V
IC=15A,VGE=15V, Tvj=25℃
1.8
IC=15A,VGE=15V, Tvj=125℃
2.1
V
IC=15A,VGE=15V, Tvj=150℃
2.2
V
0.15
μC
Gate Charge
Qg
Input Capacitance
Cies
Reverse Transfer Capacitance
Cres
Gate-Emitter leakage current
IGES
Turn-On Delay Time
td(on)
90
tr
64
Rise Time
Turn-Off Delay Time
Fall Time
td(off)
tf
VCE=25V,VGE=0V,f=1MHz
1.1
nF
0.04
400
VCE=0V, VGE=20V, Tvj=25℃
ns
VCE=600V, IC=15A,
VGE=± 15V, RG=39Ω,
180
Tvj=25℃
135
Turn‐On Energy
Eon
1.42
Turn‐Off Energy
Eoff
0.78
Turn-On Delay Time
td(on)
95
tr
70
Rise Time
Turn-Off Delay Time
Fall Time
td(off)
tf
mJ
ns
VCE=600V, IC=15A,
VGE=± 15V, RG=39Ω,
260
Tvj=125℃
180
Turn‐On Energy
Eon
1.85
Turn‐Off Energy
Eoff
1.13
SC Data
ISC
Rev.3-1-04162022
nA
mJ
Tp≤10μs,VGE=15V,Tvj=150℃,
VCC=900V,VCEM≤1200V
2/12
90
A
MCCSEMI.COM
MIP15R12P2TN
● Diode- Inverter
Maximum Ratings
Parameter
Repetitive Peak Reverse Voltage
VRRM
Continuous DC Forward Current
IF
Repetitive Peak Forward Current
IFRM
I2t-value
Test Conditions
Rating
Unit
1200
V
15
A
tp=1ms
30
A
VR=0,tp=10ms,Tvj=125℃
16
VR=0,tp=10ms,Tvj=150℃
14
Symbol
I2t
Tvj=25℃
A2s
Electrical Characteristics
Parameter
Forward Voltage
Recovered Charge
Peak Reverse Recovery Current
Symbol
VF
Irr
Erec
Recovered Charge
Qrr
Reverse Recovery Energy
Rev.3-1-04162022
Typ
Max
Unit
IF=15A, Tvj=25℃
2
2.65
V
IF=15A, Tvj=125℃
2.1
V
IF=15A, Tvj=150℃
2.1
V
1.2
μC
13
A
0.37
mJ
2.05
μC
12
A
0.68
mJ
Qrr
Reverse Recovery Energy
Peak Reverse Recovery Current
Test Conditions
Irr
IF=15A, VR=600V,
-diF/dt=600A/μs, Tvj=25℃
IF=15A, VR=600V,
-diF/dt=600A/μs, Tvj=125℃
Erec
3/12
Min
MCCSEMI.COM
MIP15R12P2TN
● IGBT- Brake-chopper
Maximum Ratings
Parameter
Collector-Emitter Voltage
Continuous Collector Current
Test Conditions
Rating
Unit
1200
V
TC=100℃, Tvjmax=175℃
15
A
Symbol
VCES
IC
VGE=0V, IC=1mA, Tvj=25℃
Repetitive Peak Collector Current
ICRM
tp=1ms
30
A
Gate-Emitter Voltage
VGES
Tvj=25℃
±20
V
TC=25℃, Tvjmax=175℃
155
W
Total Power Dissipation
Ptot
Electrical Characteristics
Parameter
Symbol
Test Conditions
Gate-Emitter Threshold Voltage
VGE(th)
VGE=VCE, IC=0.5mA,Tvj=25℃
Collector-Emitter Cut-off Current
ICES
VCE=1200V,VGE=0V, Tvj=25℃
Collector-Emitter
Saturation Voltage
VCE(sat)
Gate Charge
Qg
Input Capacitance
Cies
Reverse Transfer Capacitance
Cres
Gate-Emitter leakage current
IGES
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
Fall Time
tf
Typ
Max
Unit
5.2
6.0
6.8
V
1
mA
2.25
V
IC=15A,VGE=15V, Tvj=25℃
1.85
IC=15A,VGE=15V, Tvj=125℃
2.15
V
IC=15A,VGE=15V, Tvj=150℃
2.25
V
0.09
μC
VCE=25V,VGE=0V,f=1MHz
1.35
nF
0.08
400
VCE=0V, VGE=20V, Tvj=25℃
45
ns
VCE=600V, IC=15A,
VGE=± 15V, RG=39Ω,
182
Tvj=25℃
168
Turn‐On Energy
Eon
0.92
Turn‐Off Energy
Eoff
0.56
Turn-On Delay Time
td(on)
46
tr
63
Rise Time
Turn-Off Delay Time
Fall Time
td(off)
tf
mJ
ns
VCE=600V, IC=15A,
VGE=± 15V, RG=39Ω,
248
Tvj=125℃
220
Turn‐On Energy
Eon
1.37
Turn‐Off Energy
Eoff
0.81
SC Data
ISC
Rev.3-1-04162022
nA
46
tr
td(off)
Min
mJ
Tp≤10μs,VGE=15V,Tvj=150℃,
VCC=900V,VCEM≤1200V
4/12
90
A
MCCSEMI.COM
MIP15R12P2TN
● Diode- Brake-chopper
Maximum Ratings
Parameter
Repetitive Peak Reverse Voltage
VRRM
Continuous DC Forward Current
IF
Repetitive Peak Forward Current
IFRM
I2t-value
Test Conditions
Rating
Unit
1200
V
10
A
tp=1ms
20
A
VR=0,tp=10ms,Tvj=125℃
16
VR=0,tp=10ms,Tvj=150℃
14
Symbol
I2t
Tvj=25℃
A2s
Electrical Characteristics
Parameter
Forward Voltage
Recovered Charge
Peak Reverse Recovery Current
Symbol
VF
Irr
Erec
Recovered Charge
Qrr
Reverse Recovery Energy
Rev.3-1-04162022
Typ
Max
Unit
IF=10A, Tvj=25℃
2.0
2.5
V
IF=10A, Tvj=125℃
2.1
V
IF=10A, Tvj=150℃
2.1
V
0.9
μC
12.5
A
0.25
mJ
1.7
μC
10.4
A
0.5
mJ
Qrr
Reverse Recovery Energy
Peak Reverse Recovery Current
Test Conditions
Irr
IF=10A, VR=600V,
-diF/dt=500A/μs, Tvj=25℃
IF=10A, VR=600V,
-diF/dt=500A/μs, Tvj=125℃
Erec
5/12
Min
MCCSEMI.COM
MIP15R12P2TN
● Diode- Rectifier
Maximum Ratings
Parameter
Test Conditions
Symbol
Rating
Unit
1600
V
Repetitive Peak Reverse Voltage
VRRM
Tj=25℃
Average On-state Current
50/60Hz, sine wave
IF(AV)
TC=100℃
20
A
Maximum RMS Current at Rectifier
Output
IRMSM
TC=100℃
40
A
IFSM
VR=0,tp=10ms,Tj=45℃
270
A
I2t
VR=0,tp=10ms,Tj=45℃
360
A2s
Surge Forward Current
I2t-value
Electrical Characteristics
Parameter
Symbol
Test Conditions
Diode Forward Voltage
VF
IF=15A,Tj=150℃
Reverse Current
Ir
Tj=150℃,VR=1600V
Min
Typ
Max
0.96
Unit
V
1
mA
Max
Unit
● NTC-Thermistor
Electrical Characteristics
Parameter
Symbol
Rated Resistance
R25
Deviation of R100
ΔR/R
Power Dissipation
P25
B-value
Rev.3-1-04162022
B25/50
Test Conditions
Min
Typ
kΩ
5
TC=100,R100=493.3Ω
R2=R25exp[B25/50(1/T2-1/(298.15K))]
6/12
5
-5
%
20
mW
3375
K
MCCSEMI.COM
MIP15R12P2TN
● Module Characteristics(TC=25°C unless otherwise specified)
Parameter
Symbol
Isolation voltage
Visol
Maximum Junction Temperature
Tjmax
Operating Junction Temperature
Tvj op
Operating Junction Temperature
Tstg
Stray Inductance
LCE
Module Lead Resistance ,
Terminal to Chip
Thermal Resistance
Junction to Case
Thermal Resistance
Case to Sink
t=1min,f=50Hz
Min
Typ
Max
2500
V
℃
-40
150
℃
-40
125
℃
nH
30
8
mΩ
TC=25℃, per switch
RAA’+CC’
Rθjc
RθCS
F
Weight of Module
G
Unit
175
Rcc’+EE’
Mounting Force Per Clamp
Rev.3-1-04162022
Test Conditions
6
per IGBT-inverter
0.95
1.05
per Diode-inverter
1.30
1.45
per IGBT-brake-chopper
0.95
1.05
per Diode-chopper
1.75
1.9
per Diode-rectifier
1.03
1.13
per IGBT-inverter
0.95
per Diode-inverter
1.05
per IGBT-brake-chopper
0.95
per Diode-chopper
1.05
per Diode-rectifier
1.17
per Module
0.058
25
7/12
K/W
50
20
K/W
N
g
MCCSEMI.COM
MIP15R12P2TN
Curve Characteristics
Rev.3-1-04162022
8/12
MCCSEMI.COM
MIP15R12P2TN
Curve Characteristics
Rev.3-1-04162022
9/12
MCCSEMI.COM
MIP15R12P2TN
Curve Characteristics
Rev.3-1-04162022
10/12
MCCSEMI.COM
MIP15R12P2TN
Circuit Diagram
P1
P
L1
L2
L3
G3
G1
T1
B
NTC
T2 GB
U
G6
EV
EU
NB
W
V
G4
G2
N
G5
EW
Package Dimensions
P2
Dimensions in mm
16.8±0.5
12±0.35
0.8±0.03
28.1±0.2
19.4±0.2
32
25.6
22.4
19.2
16
12.8
9.6
6.4
3.2
25.6
19.2
12.8
9.6
6.4
53±0.1
42.5±0.2
36.8±0.2
41±0.2
48±0.3
16.4±0.2
62.8±0.5
1.55±0.2
34±0.3
U
G1
V
G3
W
G5
L1
L2
T1 T2
L3
P1 P
+0.3
×8.5-0
EU G2 EV G4 EW G6 N
GB NB
B
+0.1
4.5-0
Rev.3-1-04162022
11/12
MCCSEMI.COM
MIP15R12P2TN
Ordering Information
Device
Packing
Part Number-BP
Bulk: 24pcs/Box ; 240pcs/Ctn
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make corrections, modifications , enhancements , improvements , or other changes . Micro Commercial Components
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to the general terms and conditions of commercial sale, as published at
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written approval of Micro Commercial Components Corporation.
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Rev.3-1-04162022
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MCCSEMI.COM