MIP15R12P2TN-BP

MIP15R12P2TN-BP

  • 厂商:

    MCC(美微科)

  • 封装:

    Module

  • 描述:

    IGBT MODULES 1200V 15A, P2

  • 数据手册
  • 价格&库存
MIP15R12P2TN-BP 数据手册
MIP15R12P2TN Features • • Low Switching Losses Low Vce(sat) with Positive Temperature Coefficient • • • • • • • Including Fast & Soft Recovery Anti-parallel FWD Low Inductance Case High Short Circuit Capability(10μs) Maximum Junction Temperature 175℃ Isolated Heatsink Using DBC Technology Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) IGBT Modules 1200V 15A Applications • • • Motor Drivers AC and DC Servo Drive Amplifier UPS (Uninterruptible Power Supplies) P2 Circuit Diagram Rev.3-1-04162022 1/12 MCCSEMI.COM MIP15R12P2TN ● IGBT- Inverter Maximum Ratings Parameter Collector-Emitter Voltage Continuous Collector Current Test Conditions Rating Unit 1200 V TC=100℃, Tvjmax=175℃ 15 A Symbol VCES IC VGE=0V, IC=1mA, Tvj=25℃ Repetitive Peak Collector Current ICRM tp=1ms 30 A Gate-Emitter Voltage VGES Tvj=25℃ ±20 V TC=25℃, Tvjmax=175℃ 155 W Total Power Dissipation Ptot Electrical Characteristics Parameter Symbol Test Conditions Gate-Emitter Threshold Voltage VGE(th) VGE=VCE, IC=0.5mA,Tvj=25℃ Collector-Emitter Cut-off Current ICES VCE=1200V,VGE=0V, Tvj=25℃ Collector-Emitter Saturation Voltage VCE(sat) Min Typ Max Unit 5.2 6.0 6.8 V 1 mA 2.2 V IC=15A,VGE=15V, Tvj=25℃ 1.8 IC=15A,VGE=15V, Tvj=125℃ 2.1 V IC=15A,VGE=15V, Tvj=150℃ 2.2 V 0.15 μC Gate Charge Qg Input Capacitance Cies Reverse Transfer Capacitance Cres Gate-Emitter leakage current IGES Turn-On Delay Time td(on) 90 tr 64 Rise Time Turn-Off Delay Time Fall Time td(off) tf VCE=25V,VGE=0V,f=1MHz 1.1 nF 0.04 400 VCE=0V, VGE=20V, Tvj=25℃ ns VCE=600V, IC=15A, VGE=± 15V, RG=39Ω, 180 Tvj=25℃ 135 Turn‐On Energy Eon 1.42 Turn‐Off Energy Eoff 0.78 Turn-On Delay Time td(on) 95 tr 70 Rise Time Turn-Off Delay Time Fall Time td(off) tf mJ ns VCE=600V, IC=15A, VGE=± 15V, RG=39Ω, 260 Tvj=125℃ 180 Turn‐On Energy Eon 1.85 Turn‐Off Energy Eoff 1.13 SC Data ISC Rev.3-1-04162022 nA mJ Tp≤10μs,VGE=15V,Tvj=150℃, VCC=900V,VCEM≤1200V 2/12 90 A MCCSEMI.COM MIP15R12P2TN ● Diode- Inverter Maximum Ratings Parameter Repetitive Peak Reverse Voltage VRRM Continuous DC Forward Current IF Repetitive Peak Forward Current IFRM I2t-value Test Conditions Rating Unit 1200 V 15 A tp=1ms 30 A VR=0,tp=10ms,Tvj=125℃ 16 VR=0,tp=10ms,Tvj=150℃ 14 Symbol I2t Tvj=25℃ A2s Electrical Characteristics Parameter Forward Voltage Recovered Charge Peak Reverse Recovery Current Symbol VF Irr Erec Recovered Charge Qrr Reverse Recovery Energy Rev.3-1-04162022 Typ Max Unit IF=15A, Tvj=25℃ 2 2.65 V IF=15A, Tvj=125℃ 2.1 V IF=15A, Tvj=150℃ 2.1 V 1.2 μC 13 A 0.37 mJ 2.05 μC 12 A 0.68 mJ Qrr Reverse Recovery Energy Peak Reverse Recovery Current Test Conditions Irr IF=15A, VR=600V, -diF/dt=600A/μs, Tvj=25℃ IF=15A, VR=600V, -diF/dt=600A/μs, Tvj=125℃ Erec 3/12 Min MCCSEMI.COM MIP15R12P2TN ● IGBT- Brake-chopper Maximum Ratings Parameter Collector-Emitter Voltage Continuous Collector Current Test Conditions Rating Unit 1200 V TC=100℃, Tvjmax=175℃ 15 A Symbol VCES IC VGE=0V, IC=1mA, Tvj=25℃ Repetitive Peak Collector Current ICRM tp=1ms 30 A Gate-Emitter Voltage VGES Tvj=25℃ ±20 V TC=25℃, Tvjmax=175℃ 155 W Total Power Dissipation Ptot Electrical Characteristics Parameter Symbol Test Conditions Gate-Emitter Threshold Voltage VGE(th) VGE=VCE, IC=0.5mA,Tvj=25℃ Collector-Emitter Cut-off Current ICES VCE=1200V,VGE=0V, Tvj=25℃ Collector-Emitter Saturation Voltage VCE(sat) Gate Charge Qg Input Capacitance Cies Reverse Transfer Capacitance Cres Gate-Emitter leakage current IGES Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time Fall Time tf Typ Max Unit 5.2 6.0 6.8 V 1 mA 2.25 V IC=15A,VGE=15V, Tvj=25℃ 1.85 IC=15A,VGE=15V, Tvj=125℃ 2.15 V IC=15A,VGE=15V, Tvj=150℃ 2.25 V 0.09 μC VCE=25V,VGE=0V,f=1MHz 1.35 nF 0.08 400 VCE=0V, VGE=20V, Tvj=25℃ 45 ns VCE=600V, IC=15A, VGE=± 15V, RG=39Ω, 182 Tvj=25℃ 168 Turn‐On Energy Eon 0.92 Turn‐Off Energy Eoff 0.56 Turn-On Delay Time td(on) 46 tr 63 Rise Time Turn-Off Delay Time Fall Time td(off) tf mJ ns VCE=600V, IC=15A, VGE=± 15V, RG=39Ω, 248 Tvj=125℃ 220 Turn‐On Energy Eon 1.37 Turn‐Off Energy Eoff 0.81 SC Data ISC Rev.3-1-04162022 nA 46 tr td(off) Min mJ Tp≤10μs,VGE=15V,Tvj=150℃, VCC=900V,VCEM≤1200V 4/12 90 A MCCSEMI.COM MIP15R12P2TN ● Diode- Brake-chopper Maximum Ratings Parameter Repetitive Peak Reverse Voltage VRRM Continuous DC Forward Current IF Repetitive Peak Forward Current IFRM I2t-value Test Conditions Rating Unit 1200 V 10 A tp=1ms 20 A VR=0,tp=10ms,Tvj=125℃ 16 VR=0,tp=10ms,Tvj=150℃ 14 Symbol I2t Tvj=25℃ A2s Electrical Characteristics Parameter Forward Voltage Recovered Charge Peak Reverse Recovery Current Symbol VF Irr Erec Recovered Charge Qrr Reverse Recovery Energy Rev.3-1-04162022 Typ Max Unit IF=10A, Tvj=25℃ 2.0 2.5 V IF=10A, Tvj=125℃ 2.1 V IF=10A, Tvj=150℃ 2.1 V 0.9 μC 12.5 A 0.25 mJ 1.7 μC 10.4 A 0.5 mJ Qrr Reverse Recovery Energy Peak Reverse Recovery Current Test Conditions Irr IF=10A, VR=600V, -diF/dt=500A/μs, Tvj=25℃ IF=10A, VR=600V, -diF/dt=500A/μs, Tvj=125℃ Erec 5/12 Min MCCSEMI.COM MIP15R12P2TN ● Diode- Rectifier Maximum Ratings Parameter Test Conditions Symbol Rating Unit 1600 V Repetitive Peak Reverse Voltage VRRM Tj=25℃ Average On-state Current 50/60Hz, sine wave IF(AV) TC=100℃ 20 A Maximum RMS Current at Rectifier Output IRMSM TC=100℃ 40 A IFSM VR=0,tp=10ms,Tj=45℃ 270 A I2t VR=0,tp=10ms,Tj=45℃ 360 A2s Surge Forward Current I2t-value Electrical Characteristics Parameter Symbol Test Conditions Diode Forward Voltage VF IF=15A,Tj=150℃ Reverse Current Ir Tj=150℃,VR=1600V Min Typ Max 0.96 Unit V 1 mA Max Unit ● NTC-Thermistor Electrical Characteristics Parameter Symbol Rated Resistance R25 Deviation of R100 ΔR/R Power Dissipation P25 B-value Rev.3-1-04162022 B25/50 Test Conditions Min Typ kΩ 5 TC=100,R100=493.3Ω R2=R25exp[B25/50(1/T2-1/(298.15K))] 6/12 5 -5 % 20 mW 3375 K MCCSEMI.COM MIP15R12P2TN ● Module Characteristics(TC=25°C unless otherwise specified) Parameter Symbol Isolation voltage Visol Maximum Junction Temperature Tjmax Operating Junction Temperature Tvj op Operating Junction Temperature Tstg Stray Inductance LCE Module Lead Resistance , Terminal to Chip Thermal Resistance Junction to Case Thermal Resistance Case to Sink t=1min,f=50Hz Min Typ Max 2500 V ℃ -40 150 ℃ -40 125 ℃ nH 30 8 mΩ TC=25℃, per switch RAA’+CC’ Rθjc RθCS F Weight of Module G Unit 175 Rcc’+EE’ Mounting Force Per Clamp Rev.3-1-04162022 Test Conditions 6 per IGBT-inverter 0.95 1.05 per Diode-inverter 1.30 1.45 per IGBT-brake-chopper 0.95 1.05 per Diode-chopper 1.75 1.9 per Diode-rectifier 1.03 1.13 per IGBT-inverter 0.95 per Diode-inverter 1.05 per IGBT-brake-chopper 0.95 per Diode-chopper 1.05 per Diode-rectifier 1.17 per Module 0.058 25 7/12 K/W 50 20 K/W N g MCCSEMI.COM MIP15R12P2TN Curve Characteristics Rev.3-1-04162022 8/12 MCCSEMI.COM MIP15R12P2TN Curve Characteristics Rev.3-1-04162022 9/12 MCCSEMI.COM MIP15R12P2TN Curve Characteristics Rev.3-1-04162022 10/12 MCCSEMI.COM MIP15R12P2TN Circuit Diagram P1 P L1 L2 L3 G3 G1 T1 B NTC T2 GB U G6 EV EU NB W V G4 G2 N G5 EW Package Dimensions P2 Dimensions in mm 16.8±0.5 12±0.35 0.8±0.03 28.1±0.2 19.4±0.2 32 25.6 22.4 19.2 16 12.8 9.6 6.4 3.2 25.6 19.2 12.8 9.6 6.4 53±0.1 42.5±0.2 36.8±0.2 41±0.2 48±0.3 16.4±0.2 62.8±0.5 1.55±0.2 34±0.3 U G1 V G3 W G5 L1 L2 T1 T2 L3 P1 P +0.3 ×8.5-0 EU G2 EV G4 EW G6 N GB NB B +0.1 4.5-0 Rev.3-1-04162022 11/12 MCCSEMI.COM MIP15R12P2TN Ordering Information Device Packing Part Number-BP Bulk: 24pcs/Box ; 240pcs/Ctn ***IMPORTANT NOTICE*** Micro Commercial Components Corp. reserves the right to make changes without further notice to any product herein to make corrections, modifications , enhancements , improvements , or other changes . Micro Commercial Components Corp . does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights ,nor the rights of others . The user of products in such applications shall assume all risks of such use and will agree to hold Micro Commercial Components Corp . and all the companies whose products are represented on our website, harmless against all damages. Micro Commercial Components Corp. products are sold subject to the general terms and conditions of commercial sale, as published at https://www.mccsemi.com/Home/TermsAndConditions. ***LIFE SUPPORT*** MCC's products are not authorized for use as critical components in life support devices or systems without the express written approval of Micro Commercial Components Corporation. ***CUSTOMER AWARENESS*** Counterfeiting of semiconductor parts is a growing problem in the industry. Micro Commercial Components (MCC) is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. MCC strongly encourages customers to purchase MCC parts either directly from MCC or from Authorized MCC Distributors who are listed by country on our web page cited below. Products customers buy either from MCC directly or from Authorized MCC Distributors are genuine parts, have full traceability, meet MCC's quality standards for handling and storage. MCC will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. MCC is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. Rev.3-1-04162022 12/12 MCCSEMI.COM
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