MIP50R12E1ATN-BP

MIP50R12E1ATN &502650 Features • • Low Switching Losses Low Vce(sat) with Positive Temperature Coefficient • • • • • • Including Fast & Soft Recovery Anti-parallel FWD Low Inductance Case High Short Circuit Capability(10μs) Maximum Junction Temperature 175℃ Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Applications • • • IGBT Modules 1200V 50A E1A Motor Drivers AC and DC Servo Drive Amplifier UPS (Uninterruptible Power Supplies) Circuit Diagram Rev.4-1-12012023 1/13 MCCSEMI.COM MIP50R12E1ATN ● IGBT- Inverter Maximum Ratings Parameter Collector-Emitter Voltage Continuous Collector Current Test Conditions Rating Unit 1200 V TC=100℃, Tvjmax=175℃ 50 A Symbol VCES IC VGE=0V, IC=1mA, Tvj=25℃ Repetitive Peak Collector Current ICRM tp=1ms 100 A Gate-Emitter Voltage VGES Tvj=25℃ ±20 V TC=25℃, Tvjmax=175℃ 288 W Total Power Dissipation Ptot Electrical Characteristics Parameter Symbol Gate-Emitter Threshold Voltage VGE(th) Collector-Emitter Cut-off Current ICES Collector-Emitter Saturation Voltage VCE(sat) Test Conditions VGE=VCE, IC=1.7mA,Tvj=25℃ Min Typ Max Unit 5.2 5.8 6.4 V 1 mA VCE=1200V,VGE=0V, Tvj=25℃ IC=50A,VGE=15V, Tvj=25℃ 1.9 V IC=50A,VGE=15V, Tvj=125℃ 2.2 V IC=50A,VGE=15V, Tvj=150℃ 2.32 V 0.35 μC Gate Charge Qg Input Capacitance Cies Reverse Transfer Capacitance Cres Gate-Emitter leakage current IGES Turn-On Delay Time td(on) 41 tr 48 Rise Time Turn-Off Delay Time Fall Time td(off) tf VCE=25V,VGE=0V,f=1MHz 2.6 400 VCE=0V, VGE=20V, Tvj=25℃ VCE=600V, IC=50A, VGE=± 15V, RG=20Ω, Tvj=25℃ 160 Eon 5.92 Turn‐Off Energy Eoff 3.39 Turn-On Delay Time td(on) 45 tr 50 Turn-Off Delay Time Fall Time td(off) tf VCE=600V, IC=50A, VGE=± 15V, RG=20Ω, Tvj=150℃ 169 Eon 6.87 Turn‐Off Energy Eoff 3.73 SC Data ISC Rev.4-1-12012023 VCC=900V,VCEM≤1200V 2/13 ns mJ ns 302 Turn‐On Energy Tp≤10μs,VGE=15V,Tvj=150℃, nA 244 Turn‐On Energy Rise Time nF 0.1 200 mJ A MCCSEMI.COM MIP50R12E1ATN ● Diode- Inverter Maximum Ratings Parameter Repetitive Peak Reverse Voltage VRRM Continuous DC Forward Current IF Repetitive Peak Forward Current IFRM I2t-value Test Conditions Rating Unit 1200 V 50 A tp=1ms 100 A VR=0,tp=10ms,Tvj=125℃ 560 VR=0,tp=10ms,Tvj=150℃ 480 Symbol I2t Tvj=25℃ A2s Electrical Characteristics Parameter Forward Voltage Symbol VF Recovered Charge Qrr Peak Reverse Recovery Current Irr Reverse Recovery Energy Erec Recovered Charge Qrr Peak Reverse Recovery Current Irr Reverse Recovery Energy Rev.4-1-12012023 Erec Test Conditions Min Typ Max Unit IF=50A, Tvj=25℃ 1.85 V IF=50A, Tvj=125℃ 1.70 V IF=50A, Tvj=150℃ 1.62 V 4.39 μC 31 A 1.35 mJ 6.65 μC 33 A 2.1 mJ IF=50A, VR=600V, -diF/dt=1000A/μs, Tvj=25℃ IF=50A, VR=600V, -diF/dt=1000A/μs, Tvj=150℃ 3/13 MCCSEMI.COM MIP50R12E1ATN ● IGBT- Brake-chopper Maximum Ratings Parameter Collector-Emitter Voltage Continuous Collector Current Test Conditions Rating Unit 1200 V TC=100℃, Tvjmax=175℃ 35 A Symbol VCES IC VGE=0V, IC=1mA, Tvj=25℃ Repetitive Peak Collector Current ICRM tp=1ms 70 A Gate-Emitter Voltage VGES Tvj=25℃ ±20 V TC=25℃, Tvjmax=175℃ 227 W Total Power Dissipation Ptot Electrical Characteristics Parameter Symbol Gate-Emitter Threshold Voltage VGE(th) Collector-Emitter Cut-off Current ICES Collector-Emitter Saturation Voltage VCE(sat) Test Conditions VGE=VCE, IC=1.4mA,Tvj=25℃ Min Typ Max Unit 5.2 5.8 6.4 V 1 mA VCE=1200V,VGE=0V, Tvj=25℃ IC=35A,VGE=15V, Tvj=25℃ 1.95 V IC=35A,VGE=15V, Tvj=125℃ 2.15 V IC=35A,VGE=15V, Tvj=150℃ 2.25 V 0.27 μC Gate Charge Qg Input Capacitance Cies Reverse Transfer Capacitance Cres Gate-Emitter leakage current IGES Turn-On Delay Time td(on) 30 tr 40 Rise Time Turn-Off Delay Time Fall Time td(off) tf VCE=25V,VGE=0V,f=1MHz,Tvj=25℃ 2.00 400 VCE=0V, VGE=20V, Tvj=25℃ VCE=600V, IC=35A, VGE=± 15V, RG=27Ω, Tvj=25℃ 151 Eon 3.50 Turn‐Off Energy Eoff 2.43 Turn-On Delay Time td(on) 33 tr 44 Turn-Off Delay Time Fall Time td(off) tf VCE=600V, IC=35A, VGE=± 15V, RG=27Ω, Tvj=150℃ 158 Eon 4.13 Turn‐Off Energy Eoff 2.75 SC Data ISC Rev.4-1-12012023 VCC=900V,VCEM≤1200V 4/13 ns mJ ns 274 Turn‐On Energy Tp≤10μs,VGE=15V,Tvj=150℃, nA 257 Turn‐On Energy Rise Time nF 0.07 150 mJ A MCCSEMI.COM MIP50R12E1ATN ● Diode- Brake-chopper Maximum Ratings Parameter Repetitive Peak Reverse Voltage VRRM Continuous DC Forward Current IF Repetitive Peak Forward Current IFRM I2t-value Test Conditions Rating Unit 1200 V 15 A tp=1ms 30 A VR=0,tp=10ms,Tvj=125℃ 16 VR=0,tp=10ms,Tvj=150℃ 14 Symbol I2t Tvj=25℃ A2s Electrical Characteristics Parameter Forward Voltage Symbol VF Recovered Charge Qrr Peak Reverse Recovery Current Irr Reverse Recovery Energy Erec Recovered Charge Qrr Peak Reverse Recovery Current Irr Reverse Recovery Energy Rev.4-1-12012023 Test Conditions Min Typ Max Unit IF=15A, Tvj=25℃ 2 V IF=15A, Tvj=125℃ 1.8 V IF=15A, Tvj=150℃ 1.7 V 1.2 μC 10 A 0.35 mJ 1.6 μC 15 A 1.2 mJ IF=15A, VR=600V, -diF/dt=550A/μs, Tvj=25℃ IF=15A, VR=600V, -diF/dt=550A/μs, Tvj=150℃ Erec 5/13 MCCSEMI.COM MIP50R12E1ATN ● Diode- Rectifier Maximum Ratings Parameter Test Conditions Symbol Rating Unit 1600 V Repetitive Peak Reverse Voltage VRRM Tj=25℃ Average On-state Current 50/60Hz, sine wave IF(AV) TC=100℃ 65 A Maximum RMS Current at Rectifier Output IRMSM TC=100℃ 110 A IFSM VR=0,tp=10ms,Tj=45℃ 850 A I2t VR=0,tp=10ms,Tj=45℃ 3610 A2s Surge Forward Current I2t-value Electrical Characteristics Parameter Symbol Test Conditions Diode Forward Voltage VF IF=50A,Tj=125℃ Reverse Current Ir Tj=125℃,VR=1600V Min Typ Max 1 Unit V 1.5 mA Max Unit ● NTC-Thermistor Electrical Characteristics Parameter Symbol Rated Resistance R25 Deviation of R100 ΔR/R Power Dissipation P25 B-value Rev.4-1-12012023 B25/50 Test Conditions Min Typ 5 TC=100,R100=493.3Ω R2=R25exp[B25/50(1/T2-1/(298.15K))] 6/13 -5 3375 kΩ 5 % 20 mW K MCCSEMI.COM MIP50R12E1ATN ● Module Characteristics(TC=25°C unless otherwise specified) Parameter Symbol Isolation voltage Visol Maximum Junction Temperature Tjmax Operating Junction Temperature Tvj op Operating Junction Temperature Tstg Stray Inductance LCE Module Lead Resistance , Terminal to Chip Thermal Resistance Junction to Case Thermal Resistance Case to Sink Rcc’+EE’ RAA’+CC’ Rθjc RθCS Module-to-Sink Torque MS Weight of Module G Rev.4-1-12012023 Test Conditions t=1min,f=50Hz Min Typ Max 2500 V 175 ℃ -40 150 ℃ -40 125 ℃ nH 40 4 TC=25℃, per switch mΩ 3 per IGBT-inverter 0.52 per Diode-inverter 0.81 per IGBT-brake-chopper 0.66 per Diode-chopper 1.5 per Diode-rectifier 0.64 per IGBT-inverter 0.29 per Diode-inverter 0.44 per IGBT-brake-chopper 0.32 per Diode-chopper 0.33 per Diode-rectifier 0.70 per Module 0.009 K/W K/W 6 3 180 7/13 Unit N·m g MCCSEMI.COM MIP50R12E1ATN Curve Characteristics Fig1.IGBT Output Characteristics Fig2.IGBT Transfer Characteristics 100 100 TVj=25℃ TVj=150℃ TVj=25℃ TVj=150℃ 90 80 80 VGE=15V VCE=20V 60 IC [A] Ic [A] 70 50 60 40 40 30 20 20 10 0 0 0.5 1 1.5 2 2.5 3 3.5 0 4 6 7 8 10 11 12 13 VGE [V] VCE [V] Fig4.IGBT Switching Loss vs.Rg Fig3.IGBT Switching Loss vs.Ic 20 16 Eon Eoff 16 Eon Eoff VCC=600V RG=20Ω VGE=±15V Tvj=150℃ 12 VCC=600V IC=50A VGE=±15V Tvj=150℃ 12 E [mJ] E [mJ] 9 8 8 4 4 0 0 25 50 75 0 100 IC [A] Rev.4-1-12012023 0 10 20 30 40 50 60 Rg [ohm] 8/13 MCCSEMI.COM MIP50R12E1ATN Curve Characteristics Fig 6. IGBT Transient Thermal Impedance Fig5. RBSOA 120 1 100 IC, Module Zthj-S [K/W] IC [A] 80 60 0.1 40 20 0 RG=20Ω VGE=±15V Tvj=125℃ 0 350 700 1050 0.01 0.001 1400 0.01 Fig7.Diode Foward Characteristics 100 10 Fig8.Diode Switching Loss vs.IF 4 TVj=25℃ TVj=150℃ VCC=600V RG=20Ω VGE=±15V Tvj=150℃ 3.5 80 3 70 2.5 60 E [mJ] IF [A] 1 t [s] VCE [V] 90 0.1 50 40 2 1.5 30 1 20 0.5 10 0 0 0.5 1 1.5 2 2.5 3 0 3.5 VF [V] Rev.4-1-12012023 0 10 20 30 40 50 60 70 80 90 100 IF [A] 9/13 MCCSEMI.COM MIP50R12E1ATN Curve Characteristics Fig9.Diode Switching Loss vs.Rg Fig10.Diode Transient Thermal Impedance 4 1 VCC=600V IF=50A VGE=±15V Tvj=150℃ 3.5 Zthj-S [K/W] 3 E [mJ] 2.5 2 0.1 1.5 1 0.5 0 0 5 0.01 0.001 10 15 20 25 30 35 40 45 50 55 0.01 0.1 1 10 t [s] RG [ohm] Fig12. IGBT-brake-Chopper output Characteristics Fig 11. NTC Temperature Characteristic 70 100000 TVj=25℃ TVj=150℃ 60 VGE=15V 50 R [Ω] Ic [A] 10000 40 30 1000 20 10 100 0 0 20 40 60 80 100 120 140 160 0.5 1 1.5 2 2.5 3 3.5 4 VCE [V] TC [℃] Rev.4-1-12012023 0 10/13 MCCSEMI.COM MIP50R12E1ATN Curve Characteristics Fig13.Diode-brake-chopper Forward Characteristics 30.00 TVj=25℃ TVj=150℃ 25.00 IF [A] 20.00 15.00 10.00 5.00 0.00 0.00 0.50 1.00 1.50 2.00 2.50 3.00 VF [V] Rev.4-1-12012023 11/13 MCCSEMI.COM MIP50R12E1ATN Circuit Diagram 20/21 18 10 3 2 1 4 6 8 5 7 9 19 11 16 15 13 12 14 22/23 17 Package Dimensions E1A Rev.4-1-12012023 12/13 MCCSEMI.COM MIP50R12E1ATN Ordering Information Device Packing Bulk: 8pcs/Box ; 48pcs/Ctn Part Number-BP ***IMPORTANT NOTICE*** Micro Commercial Components Corp. reserves the right to make changes without further notice to any product herein to make corrections, modifications , enhancements , improvements , or other changes . Micro Commercial Components Corp . does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights ,nor the rights of others . The user of products in such applications shall assume all risks of such use and will agree to hold Micro Commercial Components Corp . and all the companies whose products are represented on our website, harmless against all damages. Micro Commercial Components Corp. products are sold subject to the general terms and conditions of commercial sale, as published at https://www.mccsemi.com/Home/TermsAndConditions. ***LIFE SUPPORT*** MCC's products are not authorized for use as critical components in life support devices or systems without the express written approval of Micro Commercial Components Corporation. ***CUSTOMER AWARENESS*** Counterfeiting of semiconductor parts is a growing problem in the industry. Micro Commercial Components (MCC) is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. MCC strongly encourages customers to purchase MCC parts either directly from MCC or from Authorized MCC Distributors who are listed by country on our web page cited below. Products customers buy either from MCC directly or from Authorized MCC Distributors are genuine parts, have full traceability, meet MCC's quality standards for handling and storage. MCC will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. MCC is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. Rev.4-1-12012023 13/13 MCCSEMI.COM