MIP50R12E2ATN
&
Features
•
•
Low Switching Losses
Low Vce(sat) with Positive Temperature Coefficient
•
•
•
•
•
•
Including Fast & Soft Recovery Anti-parallel FWD
Low Inductance Case
High Short Circuit Capability(10μs)
Maximum Junction Temperature 175℃
Epoxy Meets UL 94 V-0 Flammability Rating
Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS
Compliant. See Ordering Information)
Applications
•
•
•
IGBT Modules
1200V 50A
E2A
Motor Drivers
AC and DC Servo Drive Amplifier
UPS (Uninterruptible Power Supplies)
Circuit Diagram
Rev.4-1-12012023
1/13
MCCSEMI.COM
MIP50R12E2ATN
● IGBT- Inverter
Maximum Ratings
Parameter
Collector-Emitter Voltage
Continuous Collector Current
Test Conditions
Rating
Unit
1200
V
TC=100℃, Tvjmax=175℃
50
A
Symbol
VCES
IC
VGE=0V, IC=1mA, Tvj=25℃
Repetitive Peak Collector Current
ICRM
tp=1ms
100
A
Gate-Emitter Voltage
VGES
Tvj=25℃
±20
V
TC=25℃, Tvjmax=175℃
288
W
Total Power Dissipation
Ptot
Electrical Characteristics
Parameter
Symbol
Gate-Emitter Threshold Voltage
VGE(th)
Collector-Emitter Cut-off Current
ICES
Collector-Emitter
Saturation Voltage
VCE(sat)
Test Conditions
VGE=VCE, IC=1.7mA,Tvj=25℃
Min
Typ
Max
Unit
5.2
5.8
6.4
V
1
mA
VCE=1200V,VGE=0V, Tvj=25℃
IC=50A,VGE=15V, Tvj=25℃
1.9
V
IC=50A,VGE=15V, Tvj=125℃
2.2
V
IC=50A,VGE=15V, Tvj=150℃
2.32
V
0.35
μC
Gate Charge
Qg
Input Capacitance
Cies
Reverse Transfer Capacitance
Cres
Internal Gate Resistance
Rgint
Gate-Emitter leakage current
IGES
Turn-On Delay Time
td(on)
41
tr
48
Rise Time
Turn-Off Delay Time
Fall Time
td(off)
tf
VCE=25V,VGE=0V,f=1MHz
2.6
4
VCE=600V, IC=50A,
VGE=± 15V, RG=20Ω,
Tvj=25℃
160
5.92
Turn‐Off Energy
Eoff
3.39
Turn-On Delay Time
td(on)
45
tr
50
Fall Time
td(off)
tf
VCE=600V, IC=50A,
VGE=± 15V, RG=20Ω,
Tvj=150℃
169
Eon
6.87
Turn‐Off Energy
Eoff
3.73
SC Data
ISC
Rev.4-1-12012023
VCC=900V,VCEM≤1200V
2/13
ns
mJ
ns
302
Turn‐On Energy
Tp≤10μs,VGE=15V,Tvj=150℃,
nA
244
Eon
Turn-Off Delay Time
Ω
400
VCE=0V, VGE=20V, Tvj=25℃
Turn‐On Energy
Rise Time
nF
0.1
200
mJ
A
MCCSEMI.COM
MIP50R12E2ATN
● Diode- Inverter
Maximum Ratings
Parameter
Repetitive Peak Reverse Voltage
VRRM
Continuous DC Forward Current
IF
Repetitive Peak Forward Current
IFRM
I2t
I2t-value
Test Conditions
Rating
Unit
1200
V
50
A
tp=1ms
100
A
VR=0,tp=10ms,Tvj=125°C
560
A2s
VR=0,tp=10ms,Tvj=150°C
480
A2s
Symbol
Tvj=25℃
Electrical Characteristics
Parameter
Forward Voltage
Symbol
VF
Recovered Charge
Qrr
Peak Reverse Recovery Current
Irr
Reverse Recovery Energy
Erec
Recovered Charge
Qrr
Peak Reverse Recovery Current
Irr
Reverse Recovery Energy
Rev.4-1-12012023
Erec
Test Conditions
Min
Typ
Max
Unit
IF=50A, Tvj=25℃
1.85
V
IF=50A, Tvj=125℃
1.7
V
IF=50A, Tvj=150℃
1.62
V
4.39
μC
31
A
1.35
mJ
6.65
μC
33
A
2.1
mJ
IF=50A, VR=600V,
-diF/dt=1000A/μs, Tvj=25℃
IF=50A, VR=600V,
-diF/dt=1000A/μs,
Tvj=150℃
3/13
MCCSEMI.COM
MIP50R12E2ATN
● IGBT- Brake-chopper
Maximum Ratings
Parameter
Collector-Emitter Voltage
Continuous Collector Current
Test Conditions
Rating
Unit
1200
V
TC=100℃, Tvjmax=175℃
35
A
Symbol
VCES
IC
VGE=0V, IC=1mA, Tvj=25℃
Repetitive Peak Collector Current
ICRM
tp=1ms
70
A
Gate-Emitter Voltage
VGES
Tvj=25℃
±20
V
TC=25℃, Tvjmax=175℃
227
W
Total Power Dissipation
Ptot
Electrical Characteristics
Parameter
Symbol
Gate-Emitter Threshold Voltage
VGE(th)
Collector-Emitter Cut-off Current
ICES
Collector-Emitter
Saturation Voltage
VCE(sat)
Gate Charge
Qg
Input Capacitance
Cies
Reverse Transfer Capacitance
Cres
Gate-Emitter leakage current
IGES
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
Fall Time
Test Conditions
VGE=VCE, IC=1.4mA,Tvj=25℃
tf
Typ
Max
Unit
5.2
5.8
6.4
V
1
mA
VCE=1200V,VGE=0V, Tvj=25℃
IC=35A,VGE=15V, Tvj=25℃
1.95
V
IC=35A,VGE=15V, Tvj=125℃
2.15
V
IC=35A,VGE=15V, Tvj=150℃
2.25
V
0.27
μC
VCE=25V,VGE=0V,f=1MHz
2
400
40
VCE=600V, IC=35A,
VGE=± 15V, RG=27Ω,
Tvj=25℃
151
3.50
Turn‐Off Energy
Eoff
2.43
Turn-On Delay Time
td(on)
33
tr
44
Fall Time
td(off)
tf
VCE=600V, IC=35A,
VGE=± 15V, RG=27Ω,
Tvj=150℃
158
Eon
4.13
Turn‐Off Energy
Eoff
2.75
SC Data
ISC
Rev.4-1-12012023
VCC=900V,VCEM≤1200V
4/13
mJ
ns
274
Turn‐On Energy
Tp≤10μs,VGE=15V,Tvj=150℃,
ns
257
Eon
Turn-Off Delay Time
nA
30
Turn‐On Energy
Rise Time
nF
0.07
VCE=0V, VGE=20V, Tvj=25℃
tr
td(off)
Min
150
mJ
A
MCCSEMI.COM
MIP50R12E2ATN
● Diode- Brake-chopper
Maximum Ratings
Parameter
Repetitive Peak Reverse Voltage
VRRM
Continuous DC Forward Current
IF
Repetitive Peak Forward Current
IFRM
I2t-value
Test Conditions
Rating
Unit
1200
V
15
A
tp=1ms
30
A
VR=0,tp=10ms,Tvj=125℃
16
VR=0,tp=10ms,Tvj=150℃
14
Symbol
I2t
Tvj=25℃
A2s
Electrical Characteristics
Parameter
Forward Voltage
Symbol
VF
Recovered Charge
Qrr
Peak Reverse Recovery Current
Irr
Reverse Recovery Energy
Erec
Recovered Charge
Qrr
Peak Reverse Recovery Current
Irr
Reverse Recovery Energy
Rev.4-1-12012023
Test Conditions
Min
Typ
Max
Unit
IF=15A, Tvj=25℃
2.0
V
IF=15A, Tvj=125℃
1.8
V
IF=15A, Tvj=150℃
1.7
V
1.2
μC
10
A
0.35
mJ
1.6
μC
15
A
1.2
mJ
IF=15A, VR=600V,
-diF/dt=550A/μs, Tvj=25℃
IF=15A, VR=600V,
-diF/dt=550A/μs, Tvj=150℃
Erec
5/13
MCCSEMI.COM
MIP50R12E2ATN
● Diode- Rectifier
Maximum Ratings
Parameter
Test Conditions
Symbol
Rating
Unit
1600
V
Repetitive Peak Reverse Voltage
VRRM
Tj=25℃
Average On-state Current
50/60Hz, sine wave
IF(AV)
TC=100℃
65
A
Maximum RMS Current at Rectifier
Output
IRMSM
TC=100℃
110
A
IFSM
VR=0,tp=10ms,Tj=45℃
850
A
I2t
VR=0,tp=10ms,Tj=45℃
3610
A2s
Surge Forward Current
I2t-value
Electrical Characteristics
Parameter
Symbol
Test Conditions
Diode Forward Voltage
VF
IF=50A,Tj=125℃
Reverse Current
Ir
Tj=125℃,VR=1600V
Min
Typ
Max
1
Unit
V
1.5
mA
Max
Unit
● NTC-Thermistor
Electrical Characteristics
Parameter
Symbol
Rated Resistance
R25
Deviation of R100
ΔR/R
Power Dissipation
P25
B-value
Rev.4-1-12012023
B25/50
Test Conditions
Min
Typ
5
TC=100,R100=493.3Ω
R2=R25exp[B25/50(1/T2-1/(298.15K))]
6/13
-5
3375
kΩ
5
%
20
mW
K
MCCSEMI.COM
MIP50R12E2ATN
● Module Characteristics(TC=25°C unless otherwise specified)
Parameter
Symbol
Isolation voltage
Visol
Maximum Junction Temperature
Tjmax
Operating Junction Temperature
Tvj op
Operating Junction Temperature
Tstg
Stray Inductance
LCE
Module Lead Resistance ,
Terminal to Chip
Thermal Resistance
Junction to Case
Thermal Resistance
Case to Sink
Rcc’+EE’
RAA’+CC’
Rθjc
RθCS
Module-to-Sink Torque
MS
Weight of Module
G
Rev.4-1-12012023
Test Conditions
t=1min,f=50Hz
Min
Typ
Max
2500
V
175
℃
-40
150
℃
-40
125
℃
nH
60
4
TC=25℃, per switch
mΩ
3
per IGBT-inverter
0.52
per Diode-inverter
0.81
per IGBT-brake-chopper
0.66
per Diode-chopper
1.5
per Diode-rectifier
0.64
per IGBT-inverter
0.29
per Diode-inverter
0.44
per IGBT-brake-chopper
0.32
per Diode-chopper
0.33
per Diode-rectifier
0.70
per Module
0.009
K/W
K/W
6
3
300
7/13
Unit
N·m
g
MCCSEMI.COM
MIP50R12E2ATN
Curve Characteristics
Fig2.IGBT Transfer Characteristics
Fig1.IGBT Output Characteristics
100
100
TVj=25℃
TVj=150℃
TVj=25℃
TVj=150℃
90
80
80
VGE=15V
VCE=20V
60
IC [A]
Ic [A]
70
50
60
40
40
30
20
20
10
0
0
0.5
1
1.5
2
2.5
3
3.5
0
4
6
7
8
Fig3.IGBT Switching Loss vs.Ic
16
13
VCC=600V
IC=50A
VGE=±15V
Tvj=150℃
12
E [mJ]
E [mJ]
12
Eon
Eoff
VCC=600V
RG=20Ω
VGE=±15V
Tvj=150℃
12
11
Fig4.IGBT Switching Loss vs.Rg
Eon
Eoff
16
10
VGE [V]
VCE [V]
20
9
8
8
4
4
0
0
25
50
75
0
100
IC [A]
Rev.4-1-12012023
0
10
20
30
40
50
60
Rg [ohm]
8/13
MCCSEMI.COM
MIP50R12E2ATN
Curve Characteristics
Fig5. RBSOA
Fig 6. IGBT Transient Thermal Impedance
1
120
100
IC, Module
Zthj-S [K/W]
IC [A]
80
60
0.1
40
20
0
RG=20Ω
VGE=±15V
Tvj=125℃
0
350
700
1050
0.01
0.001
1400
0.01
1
10
t [s]
VCE [V]
Fig8.Diode Switching Loss vs.IF
Fig7.Diode Foward Characteristics
4
100
TVj=25℃
TVj=150℃
90
VCC=600V
RG=20Ω
VGE=±15V
Tvj=150℃
3.5
80
3
70
2.5
60
E [mJ]
IF [A]
0.1
50
40
2
1.5
30
1
20
0.5
10
0
0
0.5
1
1.5
2
2.5
3
0
3.5
VF [V]
Rev.4-1-12012023
0
10 20 30 40 50 60 70 80 90 100
IF [A]
9/13
MCCSEMI.COM
MIP50R12E2ATN
Curve Characteristics
Fig9.Diode Switching Loss vs.Rg
Fig10.Diode Transient Thermal Impedance
4
1
VCC=600V
IF=50A
VGE=±15V
Tvj=150℃
3.5
Zthj-S [K/W]
3
E [mJ]
2.5
2
0.1
1.5
1
0.5
0
0
5
0.01
0.001
10 15 20 25 30 35 40 45 50 55
0.01
0.1
1
10
t [s]
RG [ohm]
Fig12. IGBT-brake-Chopper output Characteristics
Fig 11. NTC Temperature Characteristic
70
100000
TVj=25℃
TVj=150℃
60
VGE=15V
50
R [Ω]
Ic [A]
10000
40
30
1000
20
10
100
0
0
20
40
60
80
100 120 140 160
0.5
1
1.5
2
2.5
3
3.5
4
VCE [V]
TC [℃]
Rev.4-1-12012023
0
10/13
MCCSEMI.COM
MIP50R12E2ATN
Curve Characteristics
Fig13. Diode-brake-chopper Forward Characteristics
30.00
TVj=25℃
TVj=150℃
25.00
IF [A]
20.00
15.00
10.00
5.00
0.00
0.00
0.50
1.00
1.50
2.00
2.50
3.00
VF [V]
Rev.4-1-12012023
11/13
MCCSEMI.COM
MIP50R12E2ATN
Circuit Diagram
21
22
8
3
2
1
20
19
18
17
16
15
4
5
6
7
9
14
23
12
13
24
11
10
Package Dimensions
E2A
Dimensions in mm
Rev.4-1-12012023
12/13
MCCSEMI.COM
MIP50R12E2ATN
Ordering Information
Device
Packing
Part Number-BP
Bulk: 6pcs/Box ; 42pcs/Ctn
***IMPORTANT NOTICE***
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make corrections, modifications , enhancements , improvements , or other changes . Micro Commercial Components
Corp . does not assume any liability arising out of the application or use of any product described herein; neither does it
convey any license under its patent rights ,nor the rights of others . The user of products in such applications shall assume all
risks of such use and will agree to hold Micro Commercial Components Corp . and all the companies whose products are
represented on our website, harmless against all damages. Micro Commercial Components Corp. products are sold subject
to the general terms and conditions of commercial sale, as published at
https://www.mccsemi.com/Home/TermsAndConditions.
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MCC's products are not authorized for use as critical components in life support devices or systems without the express
written approval of Micro Commercial Components Corporation.
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Counterfeiting of semiconductor parts is a growing problem in the industry. Micro Commercial Components (MCC) is taking
strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. MCC strongly encourages
customers to purchase MCC parts either directly from MCC or from Authorized MCC Distributors who are listed by country on
our web page cited below. Products customers buy either from MCC directly or from Authorized MCC Distributors are genuine
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problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized
distributors.
Rev.4-1-12012023
13/13
MCCSEMI.COM
