MIW40N65-BP

MIW40N65 Features • • Low Vce(sat)，Fast Switching Vce(sat) with Positive Temperature Coefficient • • • • • High Ruggedness, Good Thermal Stability Very Tight Parameter Distribution Halogen Free Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Trench and Field Stop IGBT 650V 40A Maximum Ratings • Operating Junction Temperature Range : -55°C to +150°C • Storage Temperature Range: -55°C to +150°C • IGBT Thermal Resistance: 0.45°C/W Junction to Case • Diode Thermal Resistance: 1.25°C/W Junction to Case • Thermal Resistance: 40°C/W Junction to Ambient Parameter Collector‐Emitter Voltage DC Collector Current(1) TC=25℃ Diode Forward Current (1) TC=25℃ Unit VCE 650 V IC,pluse IF TC=100℃ Diode Pulsed Current (2) Gate‐Emitter Voltage Short Circuit Withstand Time (3) VGE=15V, VCC=400V, TJ≤150°C Power Dissipation Rating IC TC=25℃ TC=100℃ C E B Symbol TC=100℃ Pulsed Collector Current (2) TO-247 A Q 80 A 120 2 1 40 3 P A F 40 A IF,pluse 120 A VGE ±20 V K V 20 J D G tSC PD 10 μs 280 W 110 Note: 1. Limited by TJmax. 2. Tp limited by TJmax. 3. Allowed number of short circuits: 1s. Internal Structure 2(C) DIM A B C D E F J K P Q V G DIMENSIONS INCHES MM MIN MAX MIN MAX 0.787 0.866 20.00 22.00 0.598 0.638 15.20 16.20 0.185 0.208 4.70 5.30 0.035 0.059 0.90 1.50 0.059 0.094 1.50 2.40 0.067 0.091 1.70 2.30 0.019 0.031 0.48 0.80 0.748 0.833 19.00 21.15 0.122 0.189 3.10 4.80 0.118 0.150 3.00 3.80 0.106 0.134 2.70 3.40 0.197 0.224 5.00 5.70 NOTE Φ 1(G) 3(E) Rev.3-1-05072020 1/5 MCCSEMI.COM MIW40N65 Electrical Characteristics @ 25°C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics Collector‐Emitter Breakdown Voltage V(BR)CES Collector‐Emitter Saturation Voltage VCE(sat) Diode Forward Voltage G‐E Threshold Voltage C‐E Leakage Current VF VGE(th) ICES VGE=0V, IC=0.25mA 650 V VGE=15V, IC=40A 1.9 VGE=15V, IC=40A, TJ=150℃ 2.4 VGE=0V, IF=20A 1.8 VGE=0V, IF=20A, TJ=150℃ 1.6 IC=1mA, VCE=VGE V V 4 5.7 VCE=650V, VGE=0V IGES VCE=0V, VGE=20V Transconductance gFS VCE=20V, IC=40A 7 V 0.1 mA 4 VCE=650V, VGE=0V, TJ=150℃ G‐E Leakage Current 2.4 250 24 nA S Dynamic Characteristics Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Gate Charge Qg 3155 VCE=30V,VGE=0V,f=1MHz 175 pF 81.5 VCC=400V,IC=40A,VGE=15V 165 nC IGBT Switching Characteristics Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) 62 tr 54 td(off) 265 tf ns VCC=600V, IC=40A, VGE=0/15V, RG=10Ω, Inductive load 30 Turn‐On Energy Eon Turn‐Off Energy Eoff 1.4 Total Switching Energy Ets 4.7 Reverse Recovery Time trr 41 ns Reverse Recovery Charge Qrr 0.31 μC Peak Reverse Recovery Current Irrm 13.3 A 3.3 mJ Diode Characteristics Rev.3-1-05072020 VR=400V, IF=20A, diF/dt=200A/μs 2/5 MCCSEMI.COM MIW40N65 Curve Characteristics Fig. 1 - FBSOA Fig. 2 - RBSOA 1μs 100 10 Collector Current (A) Collector Current (A) 100 50μs 100μs 1 1ms TJ(max)=150°C TC=25°C Single Pulse 0.1 10 DC 1 1 10 100 1000 1 10 Collector-Emitter Voltage(V) Fig. 3 - Typical Output Characteristics 200 17V 19V 1000 Fig. 4 - Typical Output Characteristics 200 TJ=25°C 100 Collector-Emitter Voltage(V) 19V TJ=125°C 15V 17V 13V 120 11V 80 40 0 15V 160 Collector Current (A) Collector Current (A) 160 VGE=9V 0 1 2 3 4 5 6 7 13V 120 11V 80 VGE=9V 40 0 8 0 1 2 Collector-Emitter Voltage(V) 5 6 7 8 4 Collector-Emitter Saturation Voltage(V) Collector Current (A) 4 Fig. 6 - VCE(sat) —TC Fig. 5 - VCE(sat) —IC 80 60 40 TJ=25°C TJ=125°C 20 0 3 Collector-Emitter Voltage(V) 0 1 2 3 4 Collector-Emitter Saturation Voltage(V) Rev.3-1-05072020 3/5 IC=80A 3 IC=40A 2 IC=20A 1 0 25 50 75 100 125 TC (°C) MCCSEMI.COM MIW40N65 Curve Characteristics Fig. 8 - VCE—VGE Fig. 7 - VCE—VGE 16 16 TC=125°C Collector-Emitter Voltage(V) Collector-Emitter Voltage(V) TC=25°C 12 IC=40A 8 4 IC=80A 12 IC=40A 8 IC=80A 4 IC=20A IC=20A 0 0 4 8 16 12 0 20 0 4 IC=40A Gate-Emitter Voltage (V) Cies 3500 Capacitance (pF) 20 15 4000 3000 2500 2000 1500 1000 Cres 0 5 12 VCE=100V VCE=480V 9 6 3 Coes 500 10 15 20 25 30 35 0 40 0 30 60 Collector-Emitter Voltage (V) Fig. 11 - Power Derating Curve 150 180 Fig. 12 - Collector Current Derating Curve Collector Current (A) 80 200 150 100 60 40 20 50 50 75 100 125 150 Case Temperature (°C) Rev.3-1-05072020 120 100 250 0 25 90 Gate Charge(nC) 300 Power Dissipation (W) 16 12 Fig. 10 - Gate Charge Fig. 9 - Capacitance Characteristics 4500 0 8 Gate-Emitter Voltage(V) Gate-Emitter Voltage(V) 0 25 50 75 100 125 150 Case Temperature (°C) 4/5 MCCSEMI.COM MIW40N65 Ordering Information Device Packing Part Number-BP Tube:30pcs/Tube, 360pcs/Box,1.8K/Ctn; Note : Adding "-HF" Suffix For Halogen Free, eg. 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