MIW50N65H-BP

MIW50N65H Features • • Low Vce(sat)，Fast Switching Vce(sat) with Positive Temperature Coefficient • • • • High Ruggedness, Good Thermal Stability Very Tight Parameter Distribution Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Trench and Field Stop IGBT 650V 50A Maximum Ratings • Operating Junction Temperature Range : -55°C to +175°C • Storage Temperature Range: -55°C to +175°C • IGBT Thermal Resistance: 0.6°C/W Junction to Case • Diode Thermal Resistance: 0.65°C/W Junction to Case • Thermal Resistance: 40°C/W Junction to Ambient Parameter Collector‐Emitter Voltage TC=25℃ DC Collector Current(1) Diode Forward Current Diode Pulsed Current Rating Unit VCE 650 V IC (1) TC=25℃ IF TC=100℃ (2) Gate‐Emitter Voltage Power Dissipation IC,pluse TC=25℃ TC=100℃ A 80 Q A 50 200 F A 20 A VGE ±20 V G W Note: DIM A B C D E F J K P Q V G Internal Structure 2(C) 1(G) 3(E) Rev.3-2-06242021 1/7 J D 100 2. Tp limited by TJmax. K V 250 1. Limited by TJmax. 3 P 40 150 2 1 A IF,pluse PD C E B Symbol TC=100℃ Pulsed Collector Current (2) TO-247 DIMENSIONS INCHES MM MIN MAX MIN MAX 0.815 0.839 20.70 21.30 0.610 0.634 15.50 16.10 0.189 0.205 4.80 5.20 0.043 0.055 1.10 1.40 0.071 0.087 1.80 2.20 0.075 0.089 1.90 2.25 0.020 0.030 0.50 0.75 0.772 0.799 19.60 20.30 0.122 0.169 3.10 4.30 0.134 0.150 3.40 3.80 0.106 0.134 2.70 3.40 0.197 0.224 5.00 5.70 NOTE Φ MCCSEMI.COM MIW50N65H Electrical Characteristics @ 25°C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics Collector‐Emitter Breakdown Voltage Collector‐Emitter Saturation Voltage Diode Forward Voltage G‐E Threshold Voltage C‐E Leakage Current V(BR)CES VCE(sat) VF VGE(th) ICES VGE=0V, IC=0.25mA 650 V VGE=15V, IC=50A 1.5 VGE=15V, IC=50A, TJ=125°C 1.85 V VGE=15V, IC=50A, TJ=150°C 1.95 V VGE=0V, IF=20A 1.5 VGE=0V, IF=20A, TJ=125°C 1.4 V VGE=0V, IF=20A, TJ=150°C 1.35 V IC=1mA, VCE=VGE 4.5 5.5 VCE=650V, VGE=0V IGES VCE=0V, VGE=20V Transconductance gFS VCE=20V, IC=50A 1.9 6.5 V V V 0.01 mA 1 VCE=650V, VGE=0V, TJ=150℃ G‐E Leakage Current 1.9 250 21 nA S Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Charge Qg Rev.3-2-06242021 4579 VCE=25V,VGE=0V,f=1MHz 192 pF 58 VCC=300V,IC=50A,VGE=15V 2/7 186 nC MCCSEMI.COM MIW50N65H Electrical Characteristics @ 25°C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit IGBT Switching Characteristics Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) 69 tr 45 td(off) 404 tf ns VCC=400V, IC=50A, VGE=0/15V, RG=10Ω, Inductive load 58 Turn‐On Energy Eon Turn‐Off Energy Eoff 1.34 Total Switching Energy Ets 2.93 td(on) 66 tr 42 td(off) 414 Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time tf 1.59 mJ ns VCC=400V, IC=50A, VGE=0/15V, RG=10Ω, TJ=125°C Inductive load 71 Turn‐On Energy Eon Turn‐Off Energy Eoff 1.67 Total Switching Energy Ets 3.68 2.01 mJ Diode Characteristics Reverse Recovery Time trr Reverse Recovery Charge Qrr Peak Reverse Recovery Current Irrm Reverse Recovery Time trr Reverse Recovery Charge Qrr Peak Reverse Recovery Current Irrm Rev.3-2-06242021 VR=400V, IF=20A, diF/dt=220A/μs VR=400V, IF=20A, diF/dt=220A/μs, TJ=125°C 3/7 88 ns 0.24 μC 6 A 230 ns 1.05 μC 10 A MCCSEMI.COM MIW50N65H Curve Characteristics Fig. 1 - Typical Output Characteristics Fig. 2 - Transfer Characteristics 180 180 20V 17V Collector Current (A) 150 150 13V 120 Drain Current (A) 120 90 60 90 60 VGE=11V 30 0 0 1 2 VCE= 20V TJ=25°C 15V 3 4 5 30 0 6 6 7 8 Gate-Emitter Voltage (V) Capacitance (nF) 11 12 13 14 15 10 Ciss 1 Coss 0.1 Crss 12 9 6 3 0 0 10 20 30 40 50 0 40 Collector-Emitter Voltage (V) 160 200 100 250 Collector Current (A) 80 200 150 100 60 40 20 50 50 75 100 125 150 175 Case Temperature (°C) Rev.3-2-06242021 120 Fig. 6 - Collector Current Derating Curve Fig. 5 - Power Derating Curve 0 25 80 Gate Charge(nC) 300 Power Dissipation (W) 10 Fig. 4 - Gate Charge Fig. 3 - Capacitance Characteristics 100 0.01 9 Gate To Source Voltage (V) Collector-Emitter Voltage(V) 0 25 50 75 100 125 150 Case Temperature (°C) 4/7 MCCSEMI.COM MIW50N65H Curve Characteristics Fig. 7 - VCE(sat) —TJ Fig. 8 - VGE(th) —TJ 5.5 1.8 G‐EThresholdVoltage(V) Collector-Emitter Saturation Voltage(V) 2.0 IC=50A 1.6 IC=25A 1.4 1.2 5.0 4.5 4.0 3.5 1.0 25 50 75 100 125 3.0 25 150 50 75 Fig. 9 - BVCES —TJ C‐E Leakage Current (μA) Collector‐EmitterBreakdownVoltage(V) 150 Fig. 10 - ICES —TJ 820 800 780 760 25 20 15 10 VCE=650V 5 740 25 50 75 100 125 0 150 0 25 50 75 100 125 150 TJ (°C) TJ (°C) Fig. 11 - Switching Energy Losses —IC Fig. 12 - Switching Energy Losses —IC 3.0 3.0 TJ=175°C, VCC=400V, VGE=15V, RG=20Ω TJ=25°C, VCC=400V, VGE=15V, RG=20Ω 2.5 Switching Energy Losses(mJ) Switching Energy Losses(mJ) 125 30 840 2.0 Eoff 1.5 1.0 0.5 0.0 100 TJ (°C) TJ (°C) 2.5 2.0 Eoff 1.5 1.0 0.5 0 15 30 45 60 75 0.0 90 Rev.3-2-06242021 0 15 30 45 60 75 90 Collector Current (A) Collector Current (A) 5/7 MCCSEMI.COM MIW50N65H Curve Characteristics Fig. 13 - Switching Energy Losses —VCE Fig. 14 - Switching Energy Losses —VCE 2.0 2.0 TJ=175°C, VGE=15V, IC=50A, RG=20Ω Switching Energy Losses(mJ) Switching Energy Losses(mJ) TJ=25°C, VGE=15V, IC=50A, RG=20Ω 1.6 1.2 Eoff 0.8 0.4 0.0 100 150 200 250 300 350 400 1.6 1.2 Eoff 0.8 0.4 0.0 100 150 200 250 300 350 400 Collector-Emitter Voltage (V) Collector-Emitter Voltage (V) Fig. 15 - Switching Energy Losses —TJ 2.4 Switching Energy Losses(mJ) VCE=400V, VGE=0/15V, RG=10Ω 2.2 2.0 Eon 1.8 1.6 Eoff 1.4 1.2 25 50 75 100 125 150 TJ (°C) Rev.3-2-06242021 6/7 MCCSEMI.COM MIW50N65H Ordering Information Device Packing Part Number-BP Bulk: 360pcs/Box ***IMPORTANT NOTICE*** Micro Commercial Components Corp. reserves the right to make changes without further notice to any product herein to make corrections, modifications , enhancements , improvements , or other changes . Micro Commercial Components Corp . does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights ,nor the rights of others . The user of products in such applications shall assume all risks of such use and will agree to hold Micro Commercial Components Corp . and all the companies whose products are represented on our website, harmless against all damages. Micro Commercial Components Corp. products are sold subject to the general terms and conditions of commercial sale, as published at https://www.mccsemi.com/Home/TermsAndConditions. ***LIFE SUPPORT*** MCC's products are not authorized for use as critical components in life support devices or systems without the express written approval of Micro Commercial Components Corporation. ***CUSTOMER AWARENESS*** Counterfeiting of semiconductor parts is a growing problem in the industry. Micro Commercial Components (MCC) is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. MCC strongly encourages customers to purchase MCC parts either directly from MCC or from Authorized MCC Distributors who are listed by country on our web page cited below. Products customers buy either from MCC directly or from Authorized MCC Distributors are genuine parts, have full traceability, meet MCC's quality standards for handling and storage. MCC will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. MCC is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. Rev.3-2-06242021 7/7 MCCSEMI.COM