MJD127-TP

MJD127 Features • High DC Current Gain • Built-in a Damper Diode at E-C • Halogen Free Available Upon Request By Adding Suffix "-HF" • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Silicon PNP epitaxial planer Transistors Maximum Ratings @ 25°C Unless Otherwise Specified • Operating Junction Temperature Range: -55℃ to +150℃ • Storage Temperature Range: -55℃ to +150℃ • Thermal Resistance: 83℃/W Junction to Ambient • Thermal Resistance: 6.25℃/W Junction to Case DPAK(TO-252) J Parameter Symbol Rating Unit Collector-Base Voltage VCBO -100 V Collector-Emitter Voltage VCEO -100 V Emitter-Base Voltage VEBO -5 V Continuous Collector Current IC -8 A Power Dissipation PD 1.5 W H 1 C O 4 2 I F E 3 V K M Q A G L Internal Schematic Diagram 1.BASE 2,4.COLLECTOR 3.EMITTER C DIM B A B C D E F G H I J K L M O Q V R1 R1 ≈7KΩ R2 R2 ≈250Ω Rev.3-5-06102021 D B E 1/4 DIMENSIONS INCHES MM MIN MAX MIN MAX 0.087 0.094 2.20 2.40 0.000 0.005 0.00 0.13 0.026 0.034 0.66 0.86 0.018 0.023 0.46 0.58 0.256 0.264 6.50 6.70 0.201 0.215 5.10 5.46 0.190 4.83 0.236 0.244 6.00 6.20 0.086 0.094 2.18 2.39 0.386 0.409 9.80 10.40 0.114 2.90 0.055 0.067 1.40 1.70 0.063 1.60 0.043 0.051 1.10 1.30 0.000 0.012 0.00 0.30 0.211 5.35 NOTE TYP. TYP. TYP. TYP. MCCSEMI.COM MJD127 Electrical Characteristics @ TA=25°C Unless Otherwise Specified Parameter Symbol Min Typ Max Units Conditions Collector-Base Breakdown Voltage V(BR)CBO -100 V IC=-1mA, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO -100 V IC=-30mA, IB=0 Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-10mA, IC=0 Collector Cutoff Current ICBO -10 μA VCB=-100V, IE=0 Collector-Emitter Cutoff Current ICEO -10 μA VCE=-50V, IB=0 Emitter Cutoff Current IEBO -2 mA VEB=-5V, IC=0 DC Current Gain hFE(1) 1000 hFE(2) 100 VCE=-4V, IC=-8A -2.0 V IC=-4A, IB=-16mA -4.0 V IC=-8A, IB=-80mA -4.5 V IC=-8A, IB=-80mA VBE -2.8 V VCE=-4V, IC=-4A Cob 300 pF VCB=-10V, IE=0, f=0.1MHz Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter Saturation Voltage VBE(sat) Base-Emitter Voltage Output Capacitance Rev.3-5-06102021 VCE=-4V, IC=-4A 12000 2/4 MCCSEMI.COM MJD127 Curve Characteristics Fig. 2 - DC Current Gain Characteristics Fig. 1 - Static Characteristics 100000 -5 Common Emitter VCE= - 4V Common Emitter TA=25°C -0.40mA -4 10000 -0.36mA Collector Current (A) -0.32mA -3 DC Current Gain -0.28mA -0.24mA -0.20mA -2 -0.16mA TA=100°C 1000 100 TA=25°C -0.12mA -1 10 -0.08mA IB=-0.04mA -0 -0 -1 -2 -3 -4 1 -5 -1 -10 -1000 -8000 Fig. 4 - Base-Emitter Saturation Voltage Characteristics Fig. 3 - Collector-Emitter Saturation Voltage Characteristics -10 -10 -1 Base-Emitter Saturation Voltage (V) Collector-Emitter Saturation Voltage (V) -100 Collector Current (mA) Collector-Emitter Voltage (V) TA=25°C TA=100°C TA=25°C -1 TA=100°C β=100 -0.1 -30 -100 -1000 -8000 Collector Current (mA) -0.1 -30 β=100 -100 -1000 -8000 Collector Current (mA) Fig.  - Collector Power Derating Curve Collector Power Dissipation (W) 2.0 1.5 1.0 0.5 0.0 0 25 50 75 100 125 150 Ambient Temperature (°C) Rev.3-5-06102021 3/4 MCCSEMI.COM MJD127 Ordering Information Device Packing Part Number-TP Tape&Reel: 2.5Kpcs/Reel Note : Adding "-HF" Suffix for Halogen Free, eg. 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MCC will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. MCC is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. Rev.3-5-06102021 4/4 MCCSEMI.COM