MJD42C-TP

MJD42C Features • Monolithic Construction with Built-in Base-Emitter Resistors • Halogen Free Available Upon Request By Adding Suffix "-HF" • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Silicon PNP epitaxial planer Transistors Maximum Ratings @ 25°C Unless Otherwise Specified • Operating Junction Temperature Range: -65℃ to +150℃ • Storage Temperature Range: -65℃ to +150℃ • Thermal Resistance: 100℃/W Junction to Ambient Parameter Symbol Rating Unit Collector-Base Voltage VCBO -100 V Collector-Emitter Voltage VCEO -100 V Emitter-Base Voltage VEBO -5 V Continuous Collector Current IC -6 A Power Dissipation PD 1.25 W DPAK(TO-252) J H 1 C O 4 2 I F E 3 V K M Q A G L D B 1.BASE 2,4.COLLECTOR 3.EMITTER DIM A B C D E F G H I J K L M O Q V Rev.3-2-12012020 1/4 DIMENSIONS INCHES MM MIN MAX MIN MAX 0.087 0.094 2.20 2.40 0.000 0.005 0.00 0.13 0.026 0.034 0.66 0.86 0.018 0.023 0.46 0.58 0.256 0.264 6.50 6.70 0.201 0.215 5.10 5.46 0.190 4.83 0.236 0.244 6.00 6.20 0.086 0.094 2.18 2.39 0.386 0.409 9.80 10.40 0.114 2.90 0.055 0.067 1.40 1.70 0.063 1.60 0.043 0.051 1.10 1.30 0.000 0.012 0.00 0.30 0.211 5.35 NOTE TYP. TYP. TYP. TYP. MCCSEMI.COM MJD42C Electrical Characteristics @ TA=25°C Unless Otherwise Specified Parameter Symbol Min Typ Max Units Conditions Collector-Base Breakdown Voltage V(BR)CBO -100 V IC=-0.1mA, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO -100 V IC=-30mA, IB=0 Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-0.1mA, IC=0 Collector Cutoff Current ICEO -50 µA VCE=-60V, IB=0 Emitter Cutoff Current IEBO -0.5 mA VEB=-5V, IC=0 DC Current Gain hFE(1) 30 hFE(2) 15 VCE=-4V, IC=-1A VCE=-4V, IC=-3A 75 VCE(sat) -1.5 V IC=-6A, IB=-0.6A Base-Emitter Voltage VBE -2.0 V VCE=-4V, IC=-6A Transition Frequency fT Collector-Emitter Saturation Voltage Rev.3-2-12012020 3 MHz 2/4 VCE=-10V, IC=-0.5A, f=1KHz MCCSEMI.COM MJD42C Curve Characteristics Fig. 2 - DC Current Gain Characteristics Fig. 1 - Static Characteristics -400 1000 Common Emitter TA=25°C Common Emitter VCE= - 4V -3.6mA DC Current Gain Collector Current (mA) -4.0mA -300 -3.2mA -2.8mA -200 -2.4mA -2.0mA -1.6mA -100 TA=100°C 100 TA=25°C -1.2mA -0.8mA IB=-0.4mA -0 -0 -2 -4 10 -6 -1 -10 Fig. 3 - Collector-Emitter Saturation Voltage Characteristics -3000 -1200 β=10 Base-Emitter Saturation Voltage (mV) Collector-Emitter Saturation Voltage (mV) -1000 Fig. 4 - Base-Emitter Saturation Voltage Characteristics -1000 -1000 -100 TA=100°C TA=25°C -10 -0.5 -1 -10 -100 -1000 -800 TA=25°C -600 TA=100°C -400 -200 β=10 -0 -0.1 -6000 -1 Fig. 5 - Base-Emitter Voltage Characteristics -100 -1000 -6000 Fig. 6 - Collector Power Derating Curve 1.50 -1000 1.25 Collector Power Dissipation (W) -6000 TA=100°C -100 TA=25°C -10 -10 Collector Current (mA) Collector Current (mA) Collcetor Current (mA) -100 Collector Current (mA) Collector-Emitter Voltage (V) -1 1.00 0.75 0.50 0.25 Common Emitter VCE= - 4V -0.1 0.00 -0 -200 -400 -600 -800 -1000 -1200 Rev.3-2-12012020 0 25 50 75 100 125 150 Ambient Temperature (°C) Base-Emitter Voltage (mV) 3/4 MCCSEMI.COM MJD42C Ordering Information Device Packing Part Number-TP Tape&Reel: 2.5Kpcs/Reel Note : Adding "-HF" Suffix for Halogen Free, eg. 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