MMBD1501A

MCC Features l l l l Low Leakage
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# MMBD1501(A) THRU MMBD1505(A) High Conductance Low Leakage Diode 350mW SOT-23 A D Surface Mount Package Ideally Suited for Automatic Insertion 150 C Junction Temperature High Conductance o Mechanical Data l Case: SOT-23, Molded Plastic l Terminals: Solderable per MIL-STD-202, Method 208 l Polarity: See Diagram l Weight: 0.008 grams ( approx.) C B Maximum Ratings @ 25oC Unless Otherwise Specified Characteristic Working Inverse Voltage DC Forward Current Average Rectified Current Recurrent Peak Forward Current Peak Forward Surge Current @ t=1.0s @t=1.0ms Power Dissipation Thermal Resistance Operation & Storage Temp. Range Symbol V IV IF Io if if(surge) Pd R Tj, TSTG Value 180 600 200 700 1.0 2.0 350 357 -55 to +150 o Unit V mA mA mA A mW C/W o F E G H J K DIMENSIONS INCHES MIN .110 .083 .047 .035 .070 .018 .0005 .035 .003 .015 MM MIN 2.80 2.10 1.20 .89 1.78 .45 .013 .89 .085 .37 C Note: 1) These ratings are based on a max. junction temperature of 150 degrees C 2) These are steady state limits. T he factory should be consulted on applications involving pulsed or low duty cycle operation Electrical Characteristics @ 25oC Unless Otherwise Specified Charateristic Breakdown Voltage Symbol BV Min 200 620 720 800 0.83 0.87 0.9 750 850 950 1.1 1.3 1.5 1.0 3.0 10 5.0 4 Max Unit V mV mV mV V V V nA uA nA uA pF Test Cond. IR=5.0uA I F=1.0mA IF =10mA IF =50mA IF =100mA IF =200mA IF =300mA V R=125V o VR =125V T A =150 C V R=180V o V R =180V T A =150 C V R =0V, f=1.0MHz DIM A B C D E F G H J K MAX .120 .098 .055 .041 .081 .024 .0039 .044 .007 .020 MAX 3.04 2.64 1.40 1.03 2.05 .60 .100 1.12 .180 .51 NOTE Suggested Solder Pad Layout .031 .800 .035 .900 .079 2.000 inches mm Forward Voltage Drop VF Reverse Current IR ----- .037 .950 .037 .950 Junction Capacitance Cj ----- www.mccsemi.com MMBD1501(A) thru MMBD1505(A) REVERSE VOLTAGE vs REVERSE CURRENT BV - 3.0 to 100 uA VR - REVERSE VOLTAGE (V) 325 Ta= 25°C MCC REVERSE CURRENT vs REVERSE VOLTAGE IR - 130 - 205 Volts IR - REVERSE CURRENT (nA) 3 Ta= 25°C 300 2 1 275 250 0 130 3 5 10 20 30 50 I R - REVERSE CURRENT (uA) 100 150 170 190 VR - REVERSE VOLTAGE (V) 205 GENERAL RULE: The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature FORWARD VOLTAGE vs FORWARD CURRENT VF - 1 to 100 uA V VFF - FORWARD VOLTAGE (mV) FORWARD VOLTAGE vs FORWARD CURRENT VF - 0.1 to 10 mA V F V F - FORWARD VOLTAGE (mV) 550 500 450 400 350 Ta= 25°C 800 750 700 650 600 550 Ta= 25°C 1 2 5 10 20 30 50 IF - FORWARD CURRENT (uA) 3 100 500 0.1 0.2 0.3 0.5 1 2 3 5 I F - FORWARD CURRENT (mA) 10 FORWARD VOLTAGE vs FORWARD CURRENT VF - 10 to 800 mA VF - FORWARD VOLTAGE (V) 1.2 1.1 1 0.9 0.8 10 20 30 50 100 200 300 500 Ta= 25°C CAPACITANCE vs REVERSE VOLTAGE VR - 0 to 15 V 4 CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0 2 4 6 8 10 REVERSE VOLTAGE (V) 12 14 15 Ta= 25°C IF - FORWARD CURRENT (mA) IF PD - POWER DISSIPATION (mW) Average Rectified Current (Io) & Forward Current (I F) versus Ambient Temperature (TA) 500 I - CURRENT (mA) 400 300 200 100 0 IR -F OR WA RD POWER DERATING CURVE 500 400 300 200 100 0 SOT-23 Pkg DO-35 Pkg CU RR EN T ST Y Io - A ST VER AT AGE E REC -m TIFIE D CU A RRE NT mA EA D 0 50 100 150 TA - AMBIENT TEMPERATURE ( o C) 0 50 100 150 IO - AVERAGE TEMPERATURE ( oC) 200 www.mccsemi.com MMBD1501(A) thru MMBD1505(A) MCC CONNECTION DIAGRAMS 3 1501 3 3 1503 11 1 2 1 2 NC 3 1 3 2 1504 1505 MMBD1501 MMBD1503 MMBD1504 MMBD1505 MARKING 11 MMBD1501A 13 MMBD1503A 14 MMBD1504A 15 MMBD1505A 1 2 1 2 A11 A13 A14 A15 www.mccsemi.com