MMBD6100

MCC )HDWXUHV • • •
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# MMBD6100 Low Current Leakage SOT-23 Package For Surface Mount Application Capable of 225Watts of Power Dissipation C Monolithic Dual Switching Diode 5BM A A SOT-23 A D 0D[LPXP5DWLQJV • • • Operating Temperature: -55OC to +150OC Storage Temperature: -55OC to +150OC Maximum Thermal Resistance; 556OC/W Junction To Ambient C B F E (OHFWULFDO &KDUDFWHULVWLFV #  & 8QOHVV 2WKHUZLVH 6SHFLILHG Reverse Voltage Minimum Reverse Breakdown Voltage Forward Current Power Dissipation FR-5 Board(1) Power Dissipation Alumina Substrate(2) Peak Forward Surge Current Junction Temperature Forward Voltage VR VBR IF PTOT 70V 70V 200mA 225mW 1.8mW/OC 300mW 2.4mW/OC 500mA 150OC 0.55~0.7V 0.85~1.1V IF=1.0mA IF=100mA VR=50V TA=25OC, Measured at VR=0V IF=IR=10mA IR (RCE)=1.0mA .037 .950 .037 .950 .035 .900 .079 2.000 inches mm IBR=100A TA=25 C Derate above 25OC TA=25OC Derate above 25OC 8.3ms, half sine O G H J K DIMENSIONS INCHES MIN .110 .083 .047 .035 .070 .018 .0005 .035 .003 .015 MM MIN 2.80 2.10 1.20 .89 1.78 .45 .013 .89 .085 .37 PTOT IFSM TJ VF DIM A B C D E F G H J K MAX .120 .098 .055 .041 .081 .024 .0039 .044 .007 .020 MAX 3.04 2.64 1.40 1.03 2.05 .60 .100 1.12 .180 .51 NOTE Suggested Solder Pad Layout .031 .800 Maximum Reverse 0.1A Voltage Leakage IR Current Maximum Junction 2.5pF CJ Capacitance Maximum Reverse Trr 4.0nS Recovery Time 1) FR-5=1.0 × 0.75 × 0.062 in.  Alumina=0.4 × 0.3 × 0.024 in. 99.5 alumina. & www.mccsemi.com MMBD6100 820 Ω +10 V 2.0 k 100 µH 0.1 µF DUT 50 Ω OUTPUT PULSE GENERATOR 50 Ω INPUT SAMPLING OSCILLOSCOPE VR INPUT SIGNAL 90% IF 0.1 µF tr 10% tp t MCC IF trr t iR(REC) = 1.0 mA OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) IR Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit 100 I F, FORWARD CURRENT (mA) TA = 85°C 10 TA = 25°C 1.0 10 TA = 150°C TA = 125°C TA = –40°C I R , REVERSE CURRENT (m A) 1.0 0.1 TA = 85°C TA = 55°C 0.01 TA = 25°C 0.1 0.2 0.4 0.6 0.8 1.0 1.2 VF, FORWARD VOLTAGE (VOLTS) 0.001 0 10 20 30 40 50 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Forward Voltage Figure 3. Leakage Current 1.0 CD, DIODE CAPACITANCE (pF) 0.9 0.8 0.7 0.6 0 2 4 6 8 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance www.mccsemi.com