MMBD914

MCC Features • • •
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# MMBD914 Low Current Leakage Low Cost Small Outline Surface Mount Package C Pin Configuration Top View 350mW 100 Volt Silicon Epitaxial Diode SOT-23 A D 5D A • • • Maximum Ratings C B Operating Temperature: -55 °C to +150°C Storage Temperature: -55°C to +150°C Maximum Thermal Resistance; 357K/W Junction To Ambient F E Electrical Characteristics @ 25°C Unless Otherwise Specified Reverse Voltage Peak Reverse Voltage Average Rectified Current Power Dissipation Junction Temperature Peak Forward Surge Current Maximum Instantaneous Forward Voltage Maximum DC Reverse Current At Rated DC Blocking Voltage Typical Junction Capacitance Reverse Recovery Time VR VRM IO PTOT TJ IFSM 75V 100V 150mA 350mW 175°C 1.0A t=1s,Non-Repetitive Resistive Load f > 50Hz G H J DIMENSIONS INCHES MIN .110 .083 .047 .035 .070 .018 .0005 .035 .003 .015 MM MIN 2.80 2.10 1.20 .89 1.78 .45 .013 .89 .085 .37 DIM A B C D E F G H J K MAX .120 .098 .055 .041 .081 .024 .0039 .044 .007 .020 MAX 3.04 2.64 1.40 1.03 2.05 .60 .100 1.12 .180 .51 NOTE VF .855V IFM = 10mA; TJ = 25°C* TJ = 25°C VR =20Volts Suggested Solder Pad Layout .031 .800 .035 .900 .079 2.000 inches mm IR 25nA Measured at 1.0MHz, VR=0V Trr 4nS IF=10mA VR = 6V RL=100Ω *Pulse test: Pulse width 300 µsec, Duty cycle 2% CJ 2pF .037 .950 .037 .950 www.mccsemi.com MMBD914 MCC 10,000 IF, INSTANTANEOUS FORWARD CURRENT (mA) 1000 IR, LEAKAGE CURRENT (nA) 100 1000 10 100 1.0 10 0.1 VR = 20V 0.01 0 1 2 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 1 Forward Characteristics 1 0 100 200 Tj, JUNCTION TEMPERATURE (°C) Fig. 2 Leakage Current vs Junction Temperature www.mccsemi.com