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MMBT2222A_10

MMBT2222A_10

  • 厂商:

    MCC(美微科)

  • 封装:

  • 描述:

    MMBT2222A_10 - NPN General Purpose Amplifier - Micro Commercial Components

  • 数据手册
  • 价格&库存
MMBT2222A_10 数据手册
MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# M MBT2222A Features • • • • • Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation, IC=600mA Operating Junction Temperature: -55°C to +150°C Storage Temperature: -55°C to +150°C Case Material:Molded Plastic. UL Flammability Classificatio Rating 94-0 and MSL Rating 1 Marking:1P NPN General Purpose Amplifier SOT-23 A D Electrical Characteristics @ 25°C Unless Otherwise Specified Symbol Parameter Collector-Emitter Breakdown Voltage* (I C=10mAdc, IB=0) Collector-Base Breakdown Voltage (I C=10µ Adc, IE=0) Emitter-Base Breakdown Voltage (I E=10µ Adc, IC=0) Collector Cutoff Current (VCE=60Vdc, VBE=3.0Vdc) Min 40 75 6.0 10 Max Units Vdc Vdc Vdc F OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICEX C B C B E E nAdc ON CHARACTERISTICS hFE DC Current Gain* (I C=0.1mAdc, VCE=10Vdc) (I C=1.0mAdc, VCE=10Vdc) (I C=10mAdc, VCE=10Vdc) (I C=150mAdc, VCE=10Vdc) (I C=150mAdc, VCE=1.0Vdc) (I C=500mAdc, VCE=10Vdc) Collector-Emitter Saturation Voltage (I C=150mAdc, IB=15mAdc) (I C=500mAdc, IB=50mAdc) Base-Emitter Saturation Voltage (I C=150mAdc, IB=15mAdc) (I C=500mAdc, IB=50mAdc) 35 50 75 100 50 40 G H J K DIMENSIONS 300 DIM A B C D E F G H J K VCE(sat) 0.3 1.0 0.6 1.2 2.0 Vdc VBE(sat) Vdc INCHES MIN .110 .083 .047 .035 .070 .018 .0005 .035 .003 .015 MAX .120 .098 .055 .041 .081 .024 .0039 .044 .007 .020 MM MIN 2.80 2.10 1.20 .89 1.78 .45 .013 .89 .085 .37 MAX 3.04 2.64 1.40 1.03 2.05 .60 .100 1.12 .180 .51 NOTE SMALL-SIGNAL CHARACTERISTICS fT Cobo Cibo NF Current Gain-Bandwidth Product (I C=20mAdc, VCE=20Vdc, f=100MHz) Output Capacitance (VCB=10Vdec, IE=0, f=1.0MHz) Input Capacitance (VBE=0.5Vdc, IC=0, f=1.0MHz) Noise Figure (IC=100µAdc, VCE=10Vdc, RS=1.0kΩ f=1.0kHz) Delay Time (VCC=30Vdc, VBE=0.5Vdc Rise Time IC=150mAdc, IB1=15mAdc) Storage Time (VCC=30Vdc, IC=150mAdc Fall Time IB1=IB2=15mAdc) ≤ 300µs, Duty Cycle ≤ 2.0% 300 8.0 25 4.0 MHz pF pF dB .035 .900 Suggested Solder Pad Layout .031 .800 .079 2.000 inches mm SWITCHING CHARACTERISTICS td tr ts tf *Pulse Width 10 25 225 60 ns ns ns ns .037 .950 .037 .950 www.mccsemi.com Revision: 8 1 of 4 2010/02/10 MMBT2222A 1000 700 500 hFE , DC CURRENT GAIN 300 200 100 70 50 30 20 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 25°C −55°C VCE = 1.0 V VCE = 10 V 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 MCC Micro Commercial Components TJ = 125°C TM 200 300 500 700 1.0 k Figure 1. DC Current Gain VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) 1.0 TJ = 25°C 0.8 0.6 IC = 1.0 mA 10 mA 150 mA 500 mA 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 IB, BASE CURRENT (mA) 2.0 3.0 5.0 10 20 30 50 Figure 2. Collector Saturation Region 200 100 70 50 t, TIME (ns) 30 20 10 7.0 5.0 3.0 2.0 5.0 7.0 10 200 300 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 500 IC/IB = 10 TJ = 25°C tr @ VCC = 30 V td @ VEB(off) = 2.0 V td @ VEB(off) = 0 500 300 200 100 70 50 30 20 10 7.0 5.0 t′s = ts − 1/8 tf VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25°C t, TIME (ns) tf 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) 300 500 Figure 3. Turn −On Time Figure 4. Turn −Off Time Revision: 8 www.mccsemi.com 2 of 4 2010/02/10 MMBT2222A 10 8.0 IC = 1.0 mA, RS = 150 W 500 mA, RS = 200 W 100 mA, RS = 2.0 kW 50 mA, RS = 4.0 kW RS = OPTIMUM RS = SOURCE RS = RESISTANCE 10 f = 1.0 kHz 8.0 NF, NOISE FIGURE (dB) IC = 50 mA 100 mA 500 mA 1.0 mA MCC Micro Commercial Components 6.0 TM NF, NOISE FIGURE (dB) 6.0 4.0 4.0 2.0 0 0.01 0.02 0.05 0.1 0.2 2.0 0 50 0.5 1.0 2.0 5.0 10 20 50 100 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k f, FREQUENCY (kHz) f T, CURRENT−GAIN BANDWIDTH PRODUCT (MHz) RS, SOURCE RESISTANCE (OHMS) Figure 5. Frequency Effects 30 20 CAPACITANCE (pF) Ceb 10 7.0 5.0 Ccb 3.0 2.0 Figure 6. Source Resistance Effects 500 VCE = 20 V TJ = 25°C 300 200 100 70 50 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE VOLTAGE (VOLTS) 20 30 50 Figure 7. Capacitances 1.0 TJ = 25°C 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 10 V 0.4 COEFFICIENT (mV/° C) V, VOLTAGE (VOLTS) 1.0 V Figure 8. Current−Gain Bandwidth Product +0.5 0 −0.5 −1.0 −1.5 −2.0 RqVB for VBE RqVC for VCE(sat) 0.2 VCE(sat) @ IC/IB = 10 0 0.1 0.2 50 100 200 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 500 1.0 k −2.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) 500 Figure 9. “On” Voltages Figure 10. Temperature Coefficients Revision: 8 www.mccsemi.com 3 of 4 2010/02/10 MCC Micro Commercial Components TM Ordering Information Device (Part Number)-TP Packing Tape&Reel;3Kpcs/Reel ***IMPORTANT NOTICE*** Micro Commercial Components Corp . reserves the right to make changes without further notice to any product herein to make corrections, modifications , enhancements , improvements , or other changes . Micro Commercial Components Corp . does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights ,nor the rights of others . The user of products in such applications shall assume all risks of such use and will agree to hold Micro Commercial Components Corp . and all the companies whose products are represented on our website, harmless against all damages. ***APPLICATIONS DISCLAIMER*** Products offer by Micro Commercial Components Corp . are not intended for use in Medical, Aerospace or Military Applications. www.mccsemi.com Revision: 8 4 of 4 2010/02/10 3
MMBT2222A_10 价格&库存

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