MMBT2907A

MCC Features • •
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# MMBT2907A Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation C Pin Configuration Top View PNP General Purpose Amplifier SOT-23 A D 2F B E Electrical Characteristics @ 25°C Unless Otherwise Specified Symbol Parameter Collector-Emitter Breakdown Voltage* (I C=10mAdc, IB=0) Collector-Base Breakdown Voltage (I C=10µ Adc, IE=0) Emitter-Base Breakdown Voltage (I E=10µ Adc, IC=0) Base Cutoff Current (VCE=30Vdc, VBE=0.5Vdc) Collector Cutoff Current (VCE=30Vdc, VBE=0.5Vdc) Collector Cutoff Current (VCB=50Vdc, IE=0) (VCB=50Vdc, IE=0, TA=150°C) DC Current Gain* (I C=0.1mAdc, VCE=10Vdc) (I C=1.0mAdc, VCE=10Vdc) (I C=10mAdc, VCE=10Vdc) (I C=150mAdc, VCE=10Vdc) (I C=500mAdc, VCE=10Vdc) Collector-Emitter Saturation Voltage (I C=150mAdc, IB=15mAdc) (I C=500mAdc, IB=50mAdc) Base-Emitter Saturation Voltage (I C=150mAdc, IB=15mAdc) (I C=500mAdc, IB=50mAdc) Current Gain-Bandwidth Product (I C=50mAdc, VCE=20Vdc, f=100MHz) Output Capacitance (VCB=10Vdc, IE=0, f=1.0MHz) Input Capacitance (VEB=2.0Vdc, IC=0, f=1.0MHz) Delay Time (VCC=3.0Vdc, IC=150mAdc, Rise Time IB1=15mAdc) Storage Time (VCC=3.0Vdc, IC=150mAdc Fall Time IB1=IB2=15mAdc) ≤ 300µ s, Duty Cycle ≤ 2.0% Min 60 60 5.0 50 50 Max Units Vdc OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX ICBO Vdc Vdc nAdc nAdc µ Adc G F E C B H J 0.1 10.0 K DIMENSIONS INCHES MIN .110 .083 .047 .035 .070 .018 .0005 .035 .003 .015 MM MIN 2.80 2.10 1.20 .89 1.78 .45 .013 .89 .085 .37 ON CHARACTERISTICS hFE 75 100 100 100 50 DIM A B C D E F G H J K 300 VCE(sat) 0.4 1.6 1.3 2.6 Vdc MAX .120 .098 .055 .041 .081 .024 .0039 .044 .007 .020 MAX 3.04 2.64 1.40 1.03 2.05 .60 .100 1.12 .180 .51 NOTE VBE(sat) Vdc SMALL-SIGNAL CHARACTERISTICS fT Ccbo Cibo 200 8.0 30.0 10 40 80 30 MHz pF pF ns ns ns ns .035 .900 Suggested Solder Pad Layout .031 .800 .079 2.000 inches mm SWITCHING CHARACTERISTICS td tr ts tf *Pulse Width .037 .950 .037 .950 www.mccsemi.com MMBT2907A DC Current Gain vs Collector Current 300 VCE = 10V 250 200 hFE 150 100 50 VBE(ON) - (V) 0.6 0.4 T = 100°C A 0.2 0 0.1 1.2 1.0 0.8 TA = 25°C MCC Base-Emitter ON Voltage vs Collector Current VCE = 5.0V 0.1 1 IC (mA) 10 100 1.0 IC - (mA) 10 100 Pulsed Base Saturation Volatge vs Collector Current -1.5 IC/IB = 10 -1.3 -1.1 VBE(SAT) - (V) -0.9 VCE(SAT) - (V) -.1 -.5 Pulsed Collector Saturation Voltage vs Collector Current IC/IB = 10 -0.7 -.05 -0.5 0 -1.0 -.02 -1.0 -10 -100 IC - (mA) -1000 -10 IC - (mA) -100 -1000 Collector Reverse Current vs Reverse Bias Voltage 100 0 TA = 25°C 100 ICES - (µ A) 10 pF Input and Output Capacitances vs Reverse Bias Voltage 20 TA = 25°C 16 CIBO 12 8 4 1.0 0 -10 -20 -30 VCE - (V) -40 -50 -60 0 -0.1 COBO -1.0 Volts - (V) -10 www.mccsemi.com MMBT2907A Maximum Power Dissipation vs Ambient Temperature 800 1000 MCC Turn On and Turn Off Times vs Collector Current TO-92 toff 100 T - (ns) ton 10 600 PD(MAX) - (mW) 400 200 SOT-23 0 0 50 100 TA - (°C) Contours of Constant Gain Bandwidth Product (fT) 1000 -10 -8 100 VCE - (V) -4 -1.0 -.8 -.4 0 -0.1 1.0 -1.0 -10 IC - (mA) *25MHz increments from 50 to 200MHz -100 10 td 100 IC - (mA) 1000 T - (ns) ts tf tr IB1 = IB2 = IC/10 150 200 1.0 10 IB1 = IB2 = IC/10 VCC(OFF) = 15V 100 IC - (mA) Switching Times vs Collector Current 1000 10 www.mccsemi.com