MMBT3904

MCC Features • •
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# MMBT3904 Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation C Pin Configuration Top View NPN General Purpose Amplifier SOT-23 A D 1AM B E Min 40 60 5.0 50 50 Max Units Vdc Vdc Vdc nAdc nAdc G H J F E C B Electrical Characteristics @ 25°C Unless Otherwise Specified Symbol Parameter Collector-Emitter Breakdown Voltage* (I C=1.0mAdc, IB=0) Collector-Base Breakdown Voltage (I C=10µ Adc, IE=0) Emitter-Base Breakdown Voltage (I E=10µ Adc, IC=0) Collector Cutoff Current (VCB=30Vdc, VBE=3.0Vdc) Collector Cutoff Current (VCE=30Vdc, VBE=3.0Vdc) DC Current Gain* (I C=0.1mAdc, VCE=1.0Vdc) (I C=1.0mAdc, VCE=1.0Vdc) (I C=10mAdc, VCE=1.0Vdc) (I C=50mAdc, VCE=1.0Vdc) (I C=100mAdc, VCE=1.0Vdc) Collector-Emitter Saturation Voltage (I C=10mAdc, IB=1.0mAdc) (I C=50mAdc, IB=5.0mAdc) Base-Emitter Saturation Voltage (I C=10mAdc, IB=1.0mAdc) (I C=50mAdc, IB=5.0mAdc) Current Gain-Bandwidth Product (I C=10mAdc, VCE=20Vdc, f=100MHz) Output Capacitance (VCB=5.0Vdec, IE=0, f=1.0MHz) Input Capacitance (VBE=0.5Vdc, IC=0, f=1.0MHz) Noise Figure (IC=100µ Adc, VCE=5.0Vdc, RS=1.0kΩ f=10Hz to 15.7kHz) Delay Time (VCC=3.0Vdc, VBE=0.5Vdc Rise Time IC=10mAdc, IB1=1.0mAdc) Storage Time (VCC=3.0Vdc, IC=10mAdc Fall Time IB1=IB2=1.0mAdc) ≤ 300µ s, Duty Cycle ≤ 2.0% OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICEX ON CHARACTERISTICS hFE K 40 70 100 60 30 DIMENSIONS 300 VCE(sat) 0.2 0.3 0.65 0.85 0.95 Vdc VBE(sat) Vdc SMALL-SIGNAL CHARACTERISTICS fT Cobo Cibo NF 300 4.0 8.0 5.0 MHz pF pF dB DIM A B C D E F G H J K INCHES MIN .110 .083 .047 .035 .070 .018 .0005 .035 .003 .015 MAX .120 .098 .055 .041 .081 .024 .0039 .044 .007 .020 MM MIN 2.80 2.10 1.20 .89 1.78 .45 .013 .89 .085 .37 MAX 3.04 2.64 1.40 1.03 2.05 .60 .100 1.12 .180 .51 NOTE Suggested Solder Pad Layout .031 .800 .035 .900 .079 2.000 inches mm SWITCHING CHARACTERISTICS td tr ts tf *Pulse Width 35 35 200 50 ns ns ns ns .037 .950 .037 .950 www.mccsemi.com MMBT3904 DC Current Gain vs Collector Current 220 VCE = 5.0V 200 160 hFE 120 80 40 VBE(ON) - (V) 1.2 1.0 0.8 T = 25°C A 0.6 0.4 TA = 100°C 0.2 0 0.1 MCC Base-Emitter ON Voltage vs Collector Current VCE = 5.0V 0.1 1 IC (mA) 10 100 1.0 IC - (mA) 10 100 Collector Saturation Volatge vs Collector Current .150 .125 .100 VCE(SAT) - (V) .075 .050 .025 0 0.1 VBE(SAT) - (V) IC/IB = 10 TA = 25°C 1.2 1.1 1.0 .90 .80 .70 Base Saturation Voltage vs Collector Current IC/IB = 10 TA = 25°C 1.0 IC - (mA) 10 100 .60 0.1 1.0 IC - (mA) 10 100 Collector Cutoff Current vs Ambient Temperature 1000 1.0 8 VCB = 20V 100 ICBO - (mA) 10 2 1.0 0 25 50 75 TA - (°C) 100 125 150 pF 6 Capacitance vs Reverse Bias Voltage f = 1 MHz 4 CIB COB 0 0.1 1.0 Volts - (V) 10 www.mccsemi.com MMBT3904 Maximum Power Dissipation vs Ambient Temperature 800 12 10 600 TO-92 PD(MAX) - (mW) 400 NF - (dB) 6 4 200 SOT-23 0 0 50 100 TA - (°C) Contours of Constant Gain Bandwidth Product (fT) 12 10 8 VCE - (V) 6 4 2 0 0.1 10 0.1 hfe 100 1000 150 200 2 0 0.1 8 IC = 1.0mA Noise Figure vs Source Resistance MCC IC = 100µ A f = 1.0kHz 1.0 10 RS - (kΩ) Current Gain VCE = 10V f = 1.0kHz 100 10 IC - (mA) *100MHz increments from 200 to 500MHz 1.0 100 1.0 IC - (mA) 10 Noise Figure vs Frequency 6 VCE = 5.0V 5 4 NF - (dB) 3 2 1 0 IC = 50µ A RS = 1.0kΩ IC = 100µ A RS = 500Ω IC = 0.5mA RS = 200Ω T - (ns) 100 1000 Switching Times vs Collector Current IB1 = IB2 = IC/10 tr ts 10 tf 0.1 1.0 f - (kHz) 10 100 1.0 1.0 10 IC - (mA) 100 www.mccsemi.com MMBT3904 Input Impedance 10 VCE = 10V f = 1.0kHz 100 Output Admittance MCC VCE = 10V f = 1.0kHz hoe - (µΩ) 10 hie - (kΩ) 1.0 0.1 0.1 1 1.0 IC - (mA) 10 0.1 1.0 IC - (mA) 10 Voltage Feedback Ratio 100 1000 Turn On and Turn Off Times vs Collector Current hfe - (X10 ) 10 T - (ns) -4 100 toff ton 10 ton IB1 = IC/10 VBE(OFF) = 0.5V toff IB1 = IB2 = IC/10 10 IC - (mA) 100 1.0 0.1 1.0 IC - (mA) 10 1.0 1.0 www.mccsemi.com