MMBT3906

MCC Features • •
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# MMBT3906 Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation C Pin Configuration Top View PNP General Purpose Amplifier SOT-23 A D 2A B E Min 40 40 5.0 50 50 Max Units Vdc Vdc Vdc nAdc nAdc G H J F E C B Electrical Characteristics @ 25°C Unless Otherwise Specified Symbol Parameter Collector-Emitter Breakdown Voltage* (I C=1.0mAdc, IB=0) Collector-Base Breakdown Voltage (I C=10µ Adc, IE=0) Emitter-Base Breakdown Voltage (I E=10µ Adc, IC=0) Base Cutoff Current (VCE=30Vdc, VBE=3.0Vdc) Collector Cutoff Current (VCE=30Vdc, VBE=3.0Vdc) DC Current Gain* (I C=0.1mAdc, VCE=1.0Vdc) (I C=1.0mAdc, VCE=1.0Vdc) (I C=10mAdc, VCE=1.0Vdc) (I C=50mAdc, VCE=1.0Vdc) (I C=100mAdc, VCE=1.0Vdc) Collector-Emitter Saturation Voltage (I C=10mAdc, IB=1.0mAdc) (I C=50mAdc, IB=5.0mAdc) Base-Emitter Saturation Voltage (I C=10mAdc, IB=1.0mAdc) (I C=50mAdc, IB=5.0mAdc) Current Gain-Bandwidth Product (I C=10mAdc, VCE=20Vdc, f=100MHz) Output Capacitance (VCB=5.0Vdec, IE=0, f=1.0MHz) Input Capacitance (VBE=0.5Vdc, IC=0, f=1.0MHz) Noise Figure (IC=100µ Adc, VCE=5.0Vdc, RS=1.0kΩ f=10Hz to 15.7kHz) Delay Time (VCC=3.0Vdc, VBE=0.5Vdc Rise Time IC=10mAdc, IB1=1.0mAdc) Storage Time (VCC=3.0Vdc, IC=10mAdc Fall Time IB1=IB2=1.0mAdc) ≤ 300µ s, Duty Cycle ≤ 2.0% OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX ON CHARACTERISTICS hFE K 60 80 100 60 30 DIMENSIONS 300 VCE(sat) 0.25 0.4 0.65 0.85 0.95 Vdc VBE(sat) Vdc SMALL-SIGNAL CHARACTERISTICS fT Cobo Cibo NF 250 4.5 10.0 4.0 MHz pF pF dB DIM A B C D E F G H J K INCHES MIN .110 .083 .047 .035 .070 .018 .0005 .035 .003 .015 MAX .120 .098 .055 .041 .081 .024 .0039 .044 .007 .020 MM MIN 2.80 2.10 1.20 .89 1.78 .45 .013 .89 .085 .37 MAX 3.04 2.64 1.40 1.03 2.05 .60 .100 1.12 .180 .51 NOTE Suggested Solder Pad Layout .031 .800 .035 .900 .079 2.000 inches mm SWITCHING CHARACTERISTICS td tr ts tf *Pulse Width 35 35 225 75 ns ns ns ns .037 .950 .037 .950 www.mccsemi.com MMBT3906 DC Current Gain vs Collector Current 220 VCE = 1.0V 200 160 hFE 120 80 40 VBE(ON) - (V) 0.6 0.4 0.2 0 0.1 TA = 100°C 1.2 1.0 0.8 TA = 25°C MCC Base-Emitter ON Voltage vs Collector Current VCE = 5.0V 0.1 1 IC (mA) 10 100 1.0 IC - (mA) 10 100 Collector-Emitter Saturation Volatge vs Collector Current 0.6 0.5 0.4 VCE(SAT) - (V) 0.3 0.2 0.1 0 1.0 VBE(SAT) - (V) IC/IB = 10 TA = 25°C 1.4 1.2 1.0 0.8 0.6 0.4 Base-Emitter Saturation Voltage vs Collector Current IC/IB = 10 TA = 25°C 10 IC - (mA) 100 1000 0.2 1.0 10 IC - (mA) 100 1000 Collector-Base Diode Reverse Current vs Temperature 100 Common Base Open Circuit Input and Output Capacitance vs Reverse Bias Voltage 1.0 COBO TA = 25°C TO-92 8 VCB = 20V 10 ICBO - (mA) 1.0 2 0.1 0 25 50 75 TJ - (°C) 100 125 150 0 0.1 pF 6 CIBO 4 1.0 Volts - (V) 10 www.mccsemi.com MMBT3906 Maximum Power Dissipation vs Ambient Temperature 800 12 10 600 TO-92 PD(MAX) - (mW) 400 NF - (dB) 6 4 200 SOT-23 0 0 50 100 TA - (°C) Contours of Constant Gain Bandwidth Product (fT) 24 20 16 VCE - (V) 12 8 4 0 0.1 10 0.1 hfe 100 1000 150 200 2 0 0.1 8 IC = 1.0mA Noise Figure vs Source Resistance MCC VCE = 5.0V f = 1.0kHz IC = 100µ A 1.0 10 RS - (kΩ) 100 Current Gain VCE = 10V f = 1.0kHz 10 100 IC - (mA) *100MHz increments from 100 to 700, 750 and 800MHz 1.0 1.0 IC - (mA) 10 Noise Figure vs Frequency 6 VCE = 5.0V 5 1000 Switching Times vs Collector Current IB1 = IB2 = IC/10 ts 4 NF - (dB) 3 2 1 0 IC = 100µ A RS = 200Ω T - (ns) 100 tf IC = 1.0mA RS = 200Ω IC = 100µ A RS = 2.0kΩ 10 tr td 0.1 1.0 f - (kHz) 10 100 1.0 1.0 10 IC - (mA) 100 www.mccsemi.com MMBT3906 Input Impedance 10 VCE = 10V f = 1.0kHz 1000 Output Admittance MCC VCE = 10V f = 1.0kHz hoe - (µΩ) 100 hie - (kΩ) 1.0 0.1 0.1 10 1.0 IC - (mA) 10 0.1 1.0 IC - (mA) 10 Voltage Feedback Ratio 100 1000 Turn On and Turn Off Times vs Collector Current hfe - (X10 ) 10 T - (ns) -4 100 toff ton 10 ton IB1 = IC/10 VBE(OFF) = 0.5V toff IB1 = IB2 = IC/10 10 IC - (mA) 100 1.0 0.1 1.0 IC - (mA) 10 1.0 1.0 www.mccsemi.com