MMBT4401

MCC Features • •
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# MMBT4401 Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation C Pin Configuration Top View NPN General Purpose Amplifier SOT-23 A D 2X B E Electrical Characteristics @ 25°C Unless Otherwise Specified Symbol Parameter Collector-Emitter Breakdown Voltage* (I C=1.0mAdc, IB=0) Collector-Base Breakdown Voltage (I C=10mAdc, IE=0) Emitter-Base Breakdown Voltage (I E=0.1mAdc, IC=0) Base Cutoff Current (VCE=35Vdc, VBE=0.4Vdc) Collector Cutoff Current (VCE=35Vdc, VBE=0.4Vdc) DC Current Gain* (I C=0.1mAdc, VCE=1.0Vdc) (I C=1.0mAdc, VCE=1.0Vdc) (I C=10mAdc, VCE=1.0Vdc) (I C=150mAdc, VCE=1.0Vdc) (I C=500mAdc, VCE=1.0Vdc) Collector-Emitter Saturation Voltage (I C=150mAdc, IB=15mAdc) (I C=500mAdc, IB=50mAdc) Base-Emitter Saturation Voltage (I C=150mAdc, IB=15mAdc) (I C=500mAdc, IB=50mAdc) Current Gain-Bandwidth Product (I C=20mAdc, VCE=10Vdc, f=100MHz) Collector-Base Capacitance (VCB=5.0Vdc, IE=0, f=1.0MHz) Emitter-Base Capacitance (VBE=0.5Vdc, IC=0, f=1.0MHz) Delay Time (VCC=30Vdc, VBE=0.2Vdc Rise Time IC=150mAdc, IB1=15mAdc) Storage Time (VCC=30Vdc, IC=150mAdc Fall Time IB1=IB2=15mAdc) ≤ 300µ s, Duty Cycle ≤ 2.0% Min 40 60 6.0 0.1 0.1 Max Units Vdc Vdc Vdc µ Adc G F OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX C B E H J µ Adc K DIMENSIONS ON CHARACTERISTICS hFE 20 40 80 100 40 DIM A B C D E F G H J K INCHES MIN .110 .083 .047 .035 .070 .018 .0005 .035 .003 .015 300 VCE(sat) 0.4 0.75 0.75 0.95 1.2 Vdc VBE(sat) MAX .120 .098 .055 .041 .081 .024 .0039 .044 .007 .020 MM MIN 2.80 2.10 1.20 .89 1.78 .45 .013 .89 .085 .37 MAX 3.04 2.64 1.40 1.03 2.05 .60 .100 1.12 .180 .51 NOTE Vdc SMALL-SIGNAL CHARACTERISTICS fT Ccb Ceb 250 6.5 30.0 15 20 225 30 MHz pF pF ns ns ns ns .035 .900 Suggested Solder Pad Layout .031 .800 SWITCHING CHARACTERISTICS td tr ts tf *Pulse Width .037 .950 .037 .950 .079 2.000 inches mm www.mccsemi.com MMBT4401 DC Current Gain vs Collector Current 360 VCE = 10V 300 240 hFE 180 120 60 VBE(ON) - (V) 0.6 0.4 TA = 125°C 0.2 0 1.2 1.0 0.8 TA = 25°C MCC Base-Emitter ON Voltage vs Collector Current VCE = 10V 1 10 IC (mA) 100 1000 1 10 100 IC - (mA) 1000 Collector-Emitter Saturation Volatge vs Collector Current .24 .20 .16 VCE(SAT) - (V) .12 .08 .04 0 1.0 VBE(SAT) - (V) 1.1 IC/IB = 10 TA = 25°C 1.0 0.9 0.8 0.7 0.6 Base-Emitter Saturation Voltage vs Collector Current IC/IB = 10 TA = 25°C 10 IC - (mA) 100 1000 0.5 1.0 10 IC - (mA) 100 1000 Collector-Base Diode Reverse Current vs Temperature 100 40 32 VCB = 20V 10 ICBO - (mA) 1.0 8 0.1 0 25 50 75 TJ - (°C) 100 125 150 pF 24 Input Capacitance vs Reverse Bias Voltage f = 1MHz 16 Ceb 0 0.1 1.0 Volts - (V) 10 www.mccsemi.com MMBT4401 Maximum Power Dissipation vs Ambient Temperature 800 10 8 TO-92 PD(MAX) - (mW) 400 pF 6 MCC Output Capacitance vs Reverse Bias Voltage f = 1MHz 600 4 200 SOT-23 0 0 50 100 TA - (°C) 150 200 2 0 0.1 Ccb 1.0 Volts - (V) 10 www.mccsemi.com