MMBTA14

MCC Features
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# MMBTA13 MMBTA14 • • • • Operating And Storage Temperatures –55OC to 150OC RθJA is 556OC/W (Mounted on FR-5 PCB 1.0”x0.75”x0.062”) Capable of 225mWatts of Power Dissipation Marking Code: MMBTA13 ----K2D; MMBTA14 ---- 1N NPN Darlington Amplifier Transistor SOT-23 A D Electrical Characteristics @ 25 C Unless Otherwise Specified O Symbol Parameter Collector-Emitter Breakdown Voltage* (IC=100uAdc, IB =0) Collector-Base Breakdown Voltage Em itter-Base Breakdown Voltage Collector Current-Continuous Collector Cutoff Current (VCB =30Vdc, IE =0) Emitter Cutoff Current (VEB =10Vdc, IC=0) DC Current Gain* (IC=10mAdc, VCE=5.0Vdc) Min 30 30 10 300 Max Units Vdc Vdc Vdc mAdc F E OFF CHARACTERISTICS V (BR)CEO V (BR)CBO V (BR)EBO IC ICBO IEBO C B 100 100 nAdc nAdc G K H J Collector Base Emitter DIMENSIONS INCHES MIN .110 .083 .047 .035 .070 .018 .0005 .035 .003 .015 MM MIN 2.80 2.10 1.20 .89 1.78 .45 .013 .89 .085 .37 ON CHARACTERISTICS hFE MMBTA13 MMBTA14 MMBTA13 MMBTA14 V CE(sat) V BE(sat) 5000 10000 10000 20000 1.5 2.0 Vdc Vdc DIM A B C D E F G H J K (IC=150mAdc, V CE=1.0Vdc) Collector-Emitter Saturation Voltage (IC=100mAdc, IB =0.1mAdc) Base-Emitter Saturation Voltage (IC=100mAdc,V CE=5.0Vdc) Current Gain-Bandwidth Product (IC=10mAdc, VCE=5.0Vdc, f=100MHz) Output Capacitance (VCB=10Vdc, IE =0, f=1.0MHz) Input Capacitance (VBE =0.5Vdc, IC=0, f=1.0MHz) Delay Time Rise Time Storage Time Fall Time SMALL-SIGNAL CHARACTERISTICS fT Cobo Cibo 125 8.0 15 10 25 225 60 MHz pF pF ns ns ns ns MAX .120 .098 .055 .041 .081 .024 .0039 .044 .007 .020 MAX 3.04 2.64 1.40 1.03 2.05 .60 .100 1.12 .180 .51 NOTE Suggested Solder Pad Layout .031 .800 .035 .900 .079 2.000 inches mm SWITCHING CHARACTERISTICS td tr ts tf (V CC=30Vdc, VBE =0.5Vdc IC=150mAdc, IB1=15mAdc) (V CC=30Vdc, IC=150mAdc IB1=IB2=15mAdc) .037 .950 .037 .950 www.mccsemi.com MMBTA13 MMBTA14 MCC 500 200 en, NOISE VOLTAGE (nV) 100 50 20 10 5.0 10 20 50 100 200 BANDWIDTH = 1.0 Hz RS ≈ 0 i n, NOISE CURRENT (pA) 2.0 1.0 0.7 0.5 0.3 0.2 100 µA 10 µA BANDWIDTH = 1.0 Hz IC = 1.0 mA 10 µA 100 µA IC = 1.0 mA 0.1 0.07 0.05 0.03 0.02 10 20 500 1 k 2 k 5 k 10 k 20 k f, FREQUENCY (Hz) 50 k 100 k 50 100 200 500 1 k 2 k 5 k 10 k 20 k f, FREQUENCY (Hz) 50 k 100 k Figure 2. Noise Voltage Figure 3. Noise Current VT, TOTAL WIDEBAND NOISE VOLTAGE (nV) 200 BANDWIDTH = 10 Hz TO 15.7 kHz NF, NOISE FIGURE (dB) IC = 10 µA 14 12 10 8.0 6.0 4.0 2.0 5.0 10 20 50 100 200 RS, SOURCE RESISTANCE (kΩ) 500 1000 0 1.0 2.0 IC = 1.0 mA 100 µA BANDWIDTH = 10 Hz TO 15.7 kHz 100 70 50 30 20 10 µA 100 µA 1.0 mA 10 1.0 2.0 5.0 10 20 50 100 200 RS, SOURCE RESISTANCE (kΩ) 500 1000 Figure 4. Total Wideband Noise Voltage Figure 5. Wideband Noise Figure www.mccsemi.com MMBTA13 MMBTA14 20 TJ = 255C |h fe |, SMALL-SIGNAL CURRENT GAIN 4.0 VCE = 5.0 V f = 100 MHz TJ = 255C MCC 2.0 Cibo Cobo C, CAPACITANCE (pF) 10 7.0 5.0 1.0 0.8 0.6 0.4 3.0 2.0 0.04 0.1 0.2 0.4 1.0 2.0 4.0 VR, REVERSE VOLTAGE (VOLTS) 10 20 40 0.2 0.5 1.0 2.0 0.5 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) 500 Figure 6. Capacitance Figure 7. High Frequency Current Gain TJ = 1255C VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 200 k 100 k 70 k 50 k 30 k 20 k 10 k 7.0 k 5.0 k 3.0 k 3.0 TJ = 255C 2.5 2.0 1.5 1.0 0.5 0.1 0.2 IC = 10 mA 50 mA 250 mA 500 mA hFE, DC CURRENT GAIN 255C -555C VCE = 5.0 V 500 2.0 k 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 0.5 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (µA) 500 1000 Figure 8. DC Current Gain Figure 9. Collector Saturation Region RθV, TEMPERATURE COEFFICIENTS (mV/5C) 1.6 TJ = 255C 1.4 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 1000 1.2 VBE(on) @ VCE = 5.0 V 1.0 0.8 0.6 -1.0 -2.0 -3.0 *APPLIES FOR IC/IB 3 hFE/3.0 *RqVC FOR VCE(sat) 255C TO 1255C -555C TO 255C 255C TO 1255C -4.0 qVB FOR VBE -5.0 -6.0 5.0 7.0 10 -555C TO 255C VCE(sat) @ IC/IB = 1000 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 Figure 10. “On” Voltages Figure 11. Temperature Coefficients www.mccsemi.com MMBTA13 MMBTA14 MCC r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 D = 0.5 0.2 0.05 SINGLE PULSE SINGLE PULSE ZθJC(t) = r(t) • RθJC TJ(pk) - TC = P(pk) ZθJC(t) ZθJA(t) = r(t) • RθJA TJ(pk) - TA = P(pk) ZθJA(t) 0.2 0.5 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 200 500 1.0 k 2.0 k 5.0 k 10 k 0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.1 Figure 12. Thermal Response IC, COLLECTOR CURRENT (mA) 1.0 k 700 500 300 200 100 70 50 30 20 10 0.4 0.6 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT TA = 25°C TC = 25°C 1.0 ms 100 µs 1.0 s FIGURE A tP PP PP t1 1/f 40 t DUTY CYCLE + t1 f + 1 tP PEAK PULSE POWER = PP 1.0 2.0 4.0 6.0 10 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 13. Active Region Safe Operating Area Design Note: Use of Transient Thermal Resistance Data www.mccsemi.com