MMBTA55-TP

MCC Micro Commercial Components TM
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBTA55 THRU MMBTA56 PNP General Purpose Amplifier SOT-23 A D Features This device is designed for general purpose amplifier applications at collector current to 300mA • Marking : MMBTA55=2H/B55, MMBTA56=2GM/B56 • Case Material:Molded Plastic. UL Flammability Classificatio Rating 94-0 and MSL Rating 1 Maximum Ratings Symbol V CEO Rating Collector-Emitter Voltage MMBTA55 MMBTA56 V CBO Collector-Base Voltage MMBTA55 MMBTA56 V EBO IC TJ TSTG Symbol PD RJA Symbol Emitter-Base Voltage Collector Current, Continuous Operating Junction Temperature Storage Temperature Rating Total Device Dissipation* Derate above 25OC Thermal Resistance, Junction to Ambient O • Rating 60 80 60 80 4.0 500 -55 to +150 -55 to +150 Max 225 1.8 556 Min (1) Unit V V V mA O C O C Unit mW mW/ OC O C/W C B C B F E E Thermal Characteristics G H J K DIMENSIONS INCHES MIN .110 .083 .047 .035 .070 .018 .0005 .035 .003 .015 MM MIN 2.80 2.10 1.20 .89 1.78 .45 .013 .89 .085 .37 Electrical Characteristics @ 25 C Unless Otherwise Specified Parameter Collector-Emitter Breakdown Voltage (I C=1.0mAdc, IB =0) MMBTA55 MMBTA56 Emitter-Base Breakdown Voltage (I E =100ì Adc, IC=0) Collector Cutoff Current (VCB=60Vdc, IE =0) MMBTA55 (VCB=80Vdc, IE =0) MMBTA56 Emitter Cutoff Current (VCE=60Vdc, IB =0) Max Units DIM A B C D E F G H J K OFF CHARACTERISTICS V(BR)CEO 60 80 4.0 ------------0.1 0.1 0.1 Vdc V(BR)EBO ICBO Vdc uAdc uAdc uAdc MAX .120 .098 .055 .041 .081 .024 .0039 .044 .007 .020 MAX 3.04 2.64 1.40 1.03 2.05 .60 .100 1.12 .180 .51 NOTE ICES Suggested Solder Pad Layout .031 .800 ON CHARACTERISTICS hFE DC Current Gain (V CE=1.0Vdc, IC=10mAdc) (V CE=1.0Vdc, IC=100mA) VCE(sat) Collector-Emitter Saturation Voltage (I C=100mAdc, IB =10mAdc) VBE(on) Base-Emitter On Voltage (I C=100mAdc, V CE=1.0Vdc) fT Current-Gain—Bandwidth Product (2) (I C=100mAdc, V CE=1.0Vdc, f=100MHz) * FR-5=1.0 X 0.75 X 0.062 in. 1. Pulse Test: Pulse Width