MMST3906-TP

MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMST3906 Features • • • • Epitaxial Planar Die Construction Complementary NPN Type available (MMST3904) Ultra-small surface mount package Marking : K5N PNP Small Signal Transistors SOT-323 A Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL Rating 1 Maxim um Ratings Symbol V CEO V CBO V EBO IC PC TJ TSTG Symbol Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous (1) Power dissipation (1) Junction Temperature Storage Temperature Parameter Collector-Emitter Breakdown Voltage (IC=1.0mAdc, IB =0) Collector-Base Breakdown Voltage (IC=10uAdc, IE =0) Collector-Emitter Breakdown Voltage (IE =10uAdc, IC=0) Collector-Base Cutoff Current (VCE=30Vdc, VEB(OFF)=3.0Vdc) Emitter-Base Cutoff Current (VCE=30Vdc, VEB(OFF)=3.0Vdc) Rating 40 40 5.0 200 200 -55 to +150 -55 to +150 Min 40 40 5.0 ----Max ------50 50 Unit V V V mA mW O C O C G D C B C B F E E Electrical Characteristics @ 25OC Unless Otherwise Specified Units Vdc Vdc Vdc nAdc nAdc H J K DIMENSIONS INCHES MIN MAX .071 .087 .045 .053 .079 .087 .026 Nominal .047 .055 .012 .016 .000 .004 .035 .039 .004 .010 .012 .016 MM MIN MAX 1.80 2.20 1.15 1.35 2.00 2.20 0.65Nominal 1.20 1.40 .30 .40 .000 .100 .90 1.00 .100 .250 .30 .40 OFF CHARACTERISTICS (2) V (BR)CEO V (BR)CBO V (BR)EBO ICEX IBL DIM A B C D E F G H J K NOTE ON CHARACTERISTICS(2) DC Current Gain --(IC=100uAdc, V CE=1.0Vdc) 60 --80 (IC=1.0mAdc, V CE=1.0Vdc) 300 100 (IC=10mAdc, V CE=1.0Vdc) --60 (IC=50mAdc, V CE=1.0Vdc) --30 (IC=500mAdc, V CE=1.0Vdc) V CE(sat) Collector-Emitter Saturation Voltage (IC=10mAdc, IB =1.0mAdc) --0.20 (IC=50mAdc, IB =5.0mAdc) --0.30 V BE(sat) Base-Emitter Saturation Voltage (IC=10mAdc, IB =1.0mAdc) 0.65 0.85 (IC=50mAdc, IB =5.0mAdc) --0.95 Note: 1. Valid provided that terminals are kept at ambient temperature. 2. Pulse test: Pulse width