MMSTA42

MCC Micro Commercial Components TM
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMSTA42 Features • • • • • Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching Ultra-small surface mount package Marking : K3M Case Material:Molded Plastic. UL Flammability Classificatio Rating 94-0 and MSL Rating 1 NPN Small Signal Transistors SOT-323 A D Maximum Ratings Symbol V CEO V CBO V EBO IC PC TJ TSTG Symbol Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous (1) (3) Power dissipation (1) Junction Temperature Storage Temperature Parameter Collector-Emitter Breakdown Voltage (IC=1.0mAdc, IB =0) Collector-Base Breakdown Voltage (IC=100uAdc, IE =0) Collector-Emitter Breakdown Voltage (IE =100uAdc, IC=0) Collector-Base Cutoff Current (VCB=200Vdc,IE =0) Emitter-Base Cutoff Current (VCE=6.0Vdc, IC=0) DC Current Gain (IC=1.0mAdc, VCE=10Vdc) (IC=10mAdc, VCE=10Vdc) (IC=30mAdc, VCE=10Vdc) Collector-Emitter Saturation Voltage (IC=20mAdc, IB =2.0mAdc) Base-Emitter Saturation Voltage (IC=20mAdc, IB =2.0mAdc) Rating 300 300 6.0 200 200 -55 to +150 -55 to +150 Min 300 300 6.0 ----Max ------100 100 Unit V V V mA mW O C O C Units G C B C B F E E Electrical Characteristics @ 25OC Unless Otherwise Specified OFF CHARACTERISTICS V (BR)CEO V (BR)CBO V (BR)EBO ICBO IEBO Vdc K H J Vdc Vdc nAdc nAdc DIM A B C D E F G H J K DIMENSIONS INCHES MIN MAX .071 .087 .045 .053 .079 .087 .026 Nominal .047 .055 .012 .016 .000 .004 .035 .039 .004 .010 .012 .016 MM MIN MAX 1.80 2.20 1.15 1.35 2.00 2.20 0.65Nominal 1.20 1.40 .30 .40 .000 .100 .90 1.00 .100 .250 .30 .40 NOTE ON CHARACTERISTICS(2) hFE 25 40 40 ----------0.5 0.9 ------Vdc Vdc Suggested Solder Pad Layout 0.70 V CE(sat) V BE(sat) 0.90 SMALL SIGNALCHARACTERISTICS Current-Gain-Bandwidth Product 50 --(VCE=20V, f=100MHz, IC=10mA) CCB Collector-Base Capacitance --3.0 (VCB=20V, f=1.0MHz, IE =0) Note: 1. Valid provided that terminals are kept at ambient temperature. 2. Pulse test: Pulse width