MPSA06

MCC Features l
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# MPSA06 NPN Silicon Epitaxial planar Transistor for switching and amplifier applications l As complementary type, the PNP transistor is MPSA56 l On special request, this transistor is also manufactured in the pin configuration TO-18 NPN Small Signal Transistor 625 mW TO-92 A E Mechanical Data l Case: TO-92, Molded Plastic l Weight: 0.18 grams (Approx.) Maximum Ratings @ 25oC Unless Otherwise Specified Characteristic Collect to Base Voltage Collect to Emitter Voltage Emitter to Base Voltage Collect Current Total Power Dissipation @ TA =25 C Total Power Dissipation @ TC=25 C Thermal Resistance Junction to Ambient Junction Temperature Storage Temperature o o Symbol V CBO V CEO VEBO IC P tot P tot RqJA Value 80 80 4.0 500 625 1.5 200 150 -55 to 150 Unit V V V mA mW W o B C C/W o o Tj TSTG C C D Electrical Characteristics @ 25oC Unless Otherwise Specified C harateristic Collector Cut-off Current Collector to Emitter Saturatuion Voltage DC Current Gain Gain Bandwidth Product Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Base-Emitter ON Voltage S y m b o l Min IC B O V CE(sat) h FE fT V (BR)CEO V (BR)EBO V BE(ON) 100 100 100 80 4 1.2 MHz V V V Max Unit 100 0 .25 nA V Test Cond. V CB =80V, I E = 0 IC=100mA, I B = 1 0 m A V CE =1V, I C = 1 0 m A V CE =1V, I C =100mA V CE =2V, I C =20mA, f=100MHz IC=1mA, I B = 0 IE =100 uA, I C= 0 IC=10mA, I B = 1 m A DIM A B C D E G G DIMENSIONS INCHES MIN .175 .175 .500 .016 .135 .095 MAX .185 .185 --.020 .145 .105 MM MIN 4.45 4.46 12.7 0.41 3.43 2.42 MAX 4.70 4.70 --0.63 3.68 2.67 NOTE Note: Valid provided that leads are kept at ambient temperature. www.mccsemi.com