MPSA13

MCC Features • • • •
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# MPSA13 MPSA14 Capable of 1.5Watts of Power Dissipation. Collector-current 500mA Collector-base Voltage 30V Operating and storage junction temperature range: -55OC to +150 OC NPN Silicon Darlington Transistor TO-92 A E Pin Configuration Bottom View C B E Maximum Ratings Symbol V CES V CBO V EBO IC PD PD TJ TSTG Symbol Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Total Device Dissipation @T =25OC A Derate above 25OC Total Device Dissipation @T =25OC A Derate above 25OC Junction Temperature Storage Temperature Parameter Collector-Emitter Breakdown Voltage (IC=100uAdc, IB =0) Collector Cutoff Current (VCB=30Vdc, IE =0) Emitter Cutoff Current (V EB =10Vdc, IC=0) DC Current Gain (IC=10mAdc, V CE=5.0Vdc) Rating 30 30 10 500 625 5.0 1.5 12 -55 to +150 -55 to +150 Min 30 100 100 Max Unit V V V mA mW mW/ OC W mW/ OC O C O C Units Vdc nAdc nAdc B C Electrical Characteristics @ 25OC Unless Otherwise Specified OFF CHARACTERISTICS V(BR)CES ICBO IEBO D ON CHARACTERISTICS(1) hFE(1) MPSA13 MPSA14 5000 10000 10000 20000 1.5 2.0 Vdc Vdc G DIMENSIONS INCHES MIN .175 .175 .500 .016 .135 .095 MM MIN 4.45 4.46 12.7 0.41 3.43 2.42 hFE(2) VCE(sat) VBE(on) DC Current Gain (IC=100mAdc, V CE=5.0Vdc) MPSA 13 MPSA14 Collector-Emitter Saturation Voltage (IC=100mAdc, IB =0.1mAdc) Base-Emitter Saturation Voltage (IC=100mAdc, V CE=5.0Vdc) DIM A B C D E G MAX .185 .185 --.020 .145 .105 MAX 4.70 4.70 --0.63 3.68 2.67 NOTE SMALL-SIGNAL CHARACTERISTICS fT 1. Current-Gain – Bandwidth Product (2) (IC=10mAdc, V CE=5.0Vdc, f=100MHz) Pulse Test: Pulse Width