MPSA42

MCC Features l Through Hole Package l 150oC Junction Temperature
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# MPSA42 THRU MPSA43 NPN Silicon High Voltage Transistor 625mW Pin Configuration Bottom View C B E TO-92 Mechanical Data l Case: TO-92, Molded Plastic A E l Marking: MPSA42 --------- A42 MPSA43 --------- A43 B Maximum Ratings @ 25oC Unless Otherwise Specified Charateristic Symbol Collector-Emitter Voltage MPSA42 VCEO MPSA43 Collector-Base Voltage MPSA42 VCBO MPSA43 Emitter-Base Voltage MPSA42 VEBO MPSA43 Collector Current(DC) IC Power Dissipation@T A=25oC Power Dissipation@T C=25oC Thermal Resistance, Junction to Ambient Air Thermal Resistance, Junction to Case Operating & Storage Temperature Pd Pd RqJA Value 300 200 300 200 5.0 300 625 5.0 1.5 12 200 83.3 Unit V V V mA mW mW/oC W mW/oC o C D G DIMENSIONS C/W C/W o DIM A B C D E G INCHES MIN .175 .175 .500 .016 .135 .095 RqJC o Tj, TSTG -55~150 C MAX .185 .185 --.020 .145 .105 MM MIN 4.45 4.46 12.7 0.41 3.43 2.42 MAX 4.70 4.70 --0.63 3.68 2.67 NOTE www.mccsemi.com MPSA42 thru MPSA43 MCC Symbol Min Max Unit ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 200 Vdc, IE = 0) (VCB = 160 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) (VEB = 4.0 Vdc, IC = 0) MPSA42 MPSA43 IEBO MPSA42 MPSA43 — — 0.25 0.1 V(BR)CEO MPSA42 MPSA43 V(BR)CBO MPSA42 MPSA43 V(BR)EBO ICBO — — 0.25 0.1 µAdc 300 200 5.0 — — — Vdc µAdc 300 200 — — Vdc Vdc ON CHARACTERISTICS(1) DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 50 mAdc, VCE = 10 Vdc) Collector – Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) Base–Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) MPSA42 MPSA43 VBE(sat) hFE 25 80 25 VCE(sat) — — — 0.5 0.4 0.9 Vdc — 250 — Vdc SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = 10 mAdc, VCE = 5 Vdc, f = 30MHz) Collector–Base Capacitance (VCB = 20 Vdc, IE = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width MPSA42 MPSA43 fT Ccb — — 3.0 4.0 50 — MHz pF v 300 ms, Duty Cycle v 2.0%. www.mccsemi.com MPSA42 thru MPSA43 120 100 hFE , DC CURRENT GAIN 80 60 40 20 0 0.1 1.0 IC, COLLECTOR CURRENT (mA) 10 25°C TJ = +125°C MCC VCE = 10 Vdc –55°C 100 Figure 1. DC Current Gain 100 Ceb @ 1MHz C, CAPACITANCE (pF) f T CURRENT–GAIN — BANDWIDTH (MHz) , 80 70 60 50 40 30 20 10 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) TJ = 25°C VCE = 20 V f = 20 MHz 50 70 100 10 1.0 Ccb @ 1MHz 0.1 0.1 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) 1000 Figure 2. Capacitance Figure 3. Current–Gain – Bandwidth 1.4 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 0.0 0.1 VCE(sat) @ 25°C, IC/IB = 10 VCE(sat) @ 125°C, IC/IB = 10 VCE(sat) @ –55°C, IC/IB = 10 VBE(sat) @ 25°C, IC/IB = 10 VBE(sat) @ 125°C, IC/IB = 10 VBE(sat) @ –55°C, IC/IB = 10 VBE(on) @ 25°C, VCE = 10 V VBE(on) @ 125°C, VCE = 10 V VBE(on) @ –55°C, VCE = 10 V 1.0 10 IC, COLLECTOR CURRENT (mA) 100 Figure 4. ”ON” Voltages www.mccsemi.com