MPSA55-BP

MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MPSA55 MPSA56 Features • • • • • • Capable of 1.5Watts of Power Dissipation. Collector-current 500mA Collector-base Voltage 80V Operating and storage junction temperature range: -55OC to +150 OC Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL Rating 1 PNP Silicon Amplifier Transistor TO-92 A E Marking:MPSA55,MPSA56 Maximum Ratings Symbol V CEO V CBO V EBO IC PD PD TJ TSTG Symbol Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Total Device Dissipation @T =25OC A Derate above 25OC Total Device Dissipation @T =25OC A Derate above 25OC Junction Temperature Storage Temperature Parameter Collector-Emitter Breakdown Voltage(1) (IC=1.0mAdc, IB =0) MPSA55 MPSA56 Emitter-Base Breakdown Voltage (IE =100uAdc, IC=0) Collector Cutoff Current (VCE=60Vdc, IB =0) Collector Cutoff Current (VCB=60Vdc, IE =0) MPSA55 (VCB=80Vdc, IE =0) MPSA56 DC Current Gain (IC=10mAdc, V CE=1.0Vdc) DC Current Gain (IC=100mAdc, V CE=1.0Vdc) Collector-Emitter Saturation Voltage (IC=100mAdc, IB =10mAdc) Base-Emitter Saturation Voltage (IC=100mAdc, V CE=1.0Vdc) Rating 80 80 4.0 500 625 5.0 1.5 12 -55 to +150 -55 to +150 Min Max Unit V V V mA mW mW/ OC W mW/ OC O C O C Units B C Electrical Characteristics @ 25OC Unless Otherwise Specified OFF CHARACTERISTICS V(BR)CEO 60 80 4.0 0.1 Vdc Vdc uAdc C B E V(BR)EBO ICES ICBO D 0.1 0.1 uAdc G ON CHARACTERISTICS (1) hFE(1) hFE(2) VCE(sat) VBE(on) 100 100 0.25 1.2 Vdc Vdc DIM A B C D E G DIMENSIONS INCHES MIN .170 .170 .550 .010 .130 .010 MM MIN 4.33 4.30 13.97 0.36 3.30 2.44 SMALL-SIGNAL CHARACTERISTICS fT Current-Gain – Bandwidth Product (3) (IC=100mAdc, V CE=1.0Vdc, 50 f=100MHz) MPSA55 MPSA56 Pulse Test: Pulse Width