MPSA55_11

MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MPSA55 MPSA56 Features • • • • Capable of 1.5Watts of Power Dissipation. Collector-current 500mA Collector-base Voltage 80V Operating and storage junction temperature range: -55OC to +150 OC PNP Silicon Amplifier Transistor TO-92 A E • • • Marking:MPSA55,MPSA56 Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Maximum Ratings Symbol V CEO V CBO V EBO IC PD PD TJ TSTG Symbol Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Total Device Dissipation @T =25OC A Derate above 25OC Total Device Dissipation @T =25OC A Derate above 25OC Junction Temperature Storage Temperature Parameter Collector-Emitter Breakdown Voltage(1) (IC=1.0mAdc, IB =0) MPSA55 MPSA56 Emitter-Base Breakdown Voltage (IE =100uAdc, IC=0) Collector Cutoff Current (VCE=60Vdc, IB =0) Collector Cutoff Current (VCB=60Vdc, IE =0) MPSA55 (VCB=80Vdc, IE =0) MPSA56 DC Current Gain (IC=10mAdc, V CE=1.0Vdc) DC Current Gain (IC=100mAdc, V CE=1.0Vdc) Collector-Emitter Saturation Voltage (IC=100mAdc, IB =10mAdc) Base-Emitter Saturation Voltage (IC=100mAdc, V CE=1.0Vdc) Rating 80 80 4.0 500 625 5.0 1.5 12 -55 to +150 -55 to +150 Min Max Unit V V V mA mW mW/ OC W mW/ OC O C O C Units B C Electrical Characteristics @ 25OC Unless Otherwise Specified OFF CHARACTERISTICS V(BR)CEO 60 80 4.0 0.1 Vdc Vdc uAdc D V(BR)EBO ICES ICBO 0.1 0.1 uAdc G E B C ON CHARACTERISTICS (1) hFE(1) hFE(2) VCE(sat) VBE(on) 100 100 0.25 1.2 Vdc Vdc DIM A B C D E G DIMENSIONS INCHES MIN .170 .170 .550 .010 .130 .096 MM MAX .190 .190 .590 .020 .160 .104 MIN 4.33 4.30 13.97 0.36 3.30 2.44 MAX 4.83 4.83 14.97 0.56 3.96 2.64 NOTE SMALL-SIGNAL CHARACTERISTICS fT Current-Gain – Bandwidth Product (3) (IC=100mAdc, V CE=1.0Vdc, 50 f=100MHz) MPSA55 MPSA56 Pulse Test: Pulse Width