MPSA92

MCC Features • • •
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# MPSA92 Through Hole Package Operating & Storage Temperature: -55°C to +150°C Marking Code: A92 Pin Configuration Bottom View PNP Silicon High Voltage Transistor TO-92 A E C B E Electrical Characteristics @ 25°C Unless Otherwise Specified Symbol Parameter Collector-Emitter Breakdown Voltage* (I C=-1.0mAdc, IB=0) Collector-Base Breakdown Voltage (I C=-100µ Adc, IE=0) Emitter -Base Breakdown Voltage (I E=-10µ Adc, IC=0) Emitt er Cutoff Current (VEB=-3.0Vdc, IC=0) Collector Cutoff Current (VCB=-200Vdc, IE=0) DC Current Gain* (I C=-1.0mAdc, VCE=-10Vdc) (I C=-10mAdc, VCE=-10Vdc) (I C=-50mAdc, VCE=-10Vdc) Collector-Emitter Saturation Voltage (I C=-20mAdc, IB=-2.0mAdc) Base-Emitter Saturation Voltage (I C=-20mAdc, IB=-2.0mAdc) Min -300 -300 -5.0 -0.25 -0.25 Max Units Vdc Vdc Vdc uA dc uAdc OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO IEBO ICBO B ON CHARACTERISTICS hFE 25 80 25 250 C VCE(sat) VBE(sat) -0.5 -0.9 Vdc Vdc D SMALL-SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product (I C=-10mAdc, VCE=-5Vdc, f=30MHz) Ccb Coll ector -Base Capacitance (VCB=-20Vdc, IE=0, f=1 .0MHz) *Pulse Width ≤ 300µ s, Duty Cycle ≤ 2.0% fT 50 6.0 MHz pF G MAXIMUM RATINGS Symbol VCEO VCBO VEBO IC RqJA RqJC PD PD Characteristic Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C MPSA92 –300 –300 –5.0 –300 200 83.3 625 5.0 1.5 12 Unit Vdc Vdc Vdc mAdc °C/W °C/W mW mW/°C Watts mW/°C DIMENSIONS DIM A B C D E G INCHES MIN .175 .175 .500 .016 .135 .095 MAX .185 .185 --.020 .145 .105 MM MIN 4.45 4.46 12.7 0.41 3.43 2.42 MAX 4.70 4.70 --0.63 3.68 2.67 NOTE www.mccsemi.com MPSA92 300 250 hFE , DC CURRENT GAIN 200 25°C 150 100 50 0 0.1 1.0 IC, COLLECTOR CURRENT (mA) 10 –55°C TJ = +125°C MCC VCE = 10 Vdc 100 Figure 1. DC Current Gain 100 Cib @ 1MHz f T, CURRENT–GAIN — BANDWIDTH (MHz) 150 130 110 90 70 50 30 10 1 3 5 11 13 15 7 9 IC, COLLECTOR CURRENT (mA) TJ = 25°C VCE = 20 Vdc F = 20 MHz 17 19 21 C, CAPACITANCE (pF) 10 Ccb @ 1MHz 1.0 0.1 0.1 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) 1000 Figure 2. Capacitance Figure 3. Current–Gain — Bandwidth 1.4 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 0.0 0.1 VCE(sat) @ 25°C, IC/IB = 10 VCE(sat) @ 125°C, IC/IB = 10 VCE(sat) @ –55°C, IC/IB = 10 VBE(sat) @ 25°C, IC/IB = 10 VBE(sat) @ 125°C, IC/IB = 10 VBE(sat) @ –55°C, IC/IB = 10 VBE(on) @ 25°C, VCE = 10 V VBE(on) @ 125°C, VCE = 10 V VBE(on) @ –55°C, VCE = 10 V 1.0 10 IC, COLLECTOR CURRENT (mA) 100 Figure 4. ”ON” Voltages www.mccsemi.com