MSJP20N65-BP

MSJP20N65 Features • • • • Optimized Body Diode Reverse Recovery Performance Low On-resistance and Low Conduction Losses Ultra Low Gate Charge Cause Lower Driving Requirement Epoxy Meets UL 94 V-0 Flammability Rating • Moisture Sensitivity Level 1 • • Halogen Free. “Green” Device (Note 1) Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) N-CHANNEL Super-Junction Power MOSFET Maximum Ratings • Operating Junction Temperature Range : -55°C to +150°C • Storage Temperature Range: -55°C to +150°C • Thermal Resistance: 0.83°C/W Junction to Case Parameter TO-220AB(H) A Symbol Rating Unit Drain-Source Voltage VDS 650 V Gate-Source Volltage VGS ±30 V TC=25°C 20 A 12 A IDM 60 A EAS 484 mJ Repetitive Avalanche Energy EAR 0.7 mJ Avalanche Current IAR 3.5 A Total Power Dissipation PD 151 W Continuous Drain Current Pulsed Drain Current ID TC=100°C (Note 2) Single Pulse Avalanche Energy (Note 3) E Ø P 2. Repetitive Rating; Pulse Width Limited by Maximum Junction Temperature. 3. IAS=3.5A, VDD=50V, RG=25Ω, Starting TJ=25°C. Internal Structure D G S Rev.3-3-12012020 1. Gate 2. Drain 3. Source 1/4 C D S F 1 2 3 R H J K L N M Note: 1. Halogen free "Green” products are defined as those which contain