MSJPF11N65-BP

MSJPF11N65 Features • Very Low FOM RDS(on) × Q g • Epoxy Meets UL 94 V-0 Flammability Rating • • Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) N-CHANNEL Super-Junction Power MOSFET Maximum Ratings • Operating Junction Temperature Range : -55°C to +150°C • Storage Temperature Range: -55°C to +150°C • Thermal Resistance: 80°C/W Junction to Ambient • Thermal Resistance: 4°C/W Junction to Case Parameter TO-220F Symbol Rating Unit Drain-Source Voltage VDS 650 V Gate-Source Volltage VGS ±30 V ID 11 A IDM 33 A EAS 211 mJ Avalanche Current (Note 1) IAR 1.6 A Repetitive Avalanche Energy (Note 1) EAR 0.32 mJ PD 31.3 W Continuous Drain Current Pulsed Drain Current (Note 1) Single Pulse Avalanche Energy Total Power Dissipation (Note 2) TC=25°C C D 1 2 3 MCC MSJPF11N65 YWWTT G S 1. Gate 2. Drain 3. Source 1 Rev.3-9-06132022 2 YWWTT: 5 codes in total Y is the year WW is the cycle TT is the line type 3 1/5 F P J Q E H G DIM Plastic D B N Note: 1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature. 2. IAS=1.6A, VDD=50V, RG=25Ω, Starting TJ=25°C . Internal Structure and Marking Code A M A B C D E F G H J M N P Q DIMENSIONS INCHES MM MIN MAX MIN MAX 0.392 0.421 9.96 10.70 0.138 3.50 0.106 2.70 0.567 0.642 14.40 16.30 0.520 13.20 --0.177 --4.50 0.100 2.54 0.020 0.035 0.50 0.90 0.043 0.053 1.10 1.35 0.169 0.201 4.30 5.10 --0.140 --3.56 0.083 0.126 2.10 3.20 0.020 0.032 0.50 0.80 NOTE Φ TYP. TYP. TYP. MCCSEMI.COM MSJPF11N65 Electrical Characteristics @ 25°C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics V(BR)DSS VGS=0V, ID=250µA Gate-Source Leakage Current IGSS VDS=0V, VGS =±30V ±100 Zero Gate Voltage Drain Current IDSS VDS=650V, VGS=0V 1 Drain-Source Breakdown Voltage 650 V VDS=650V, VGS=0V, TJ=150°C 100 Gate-Threshold Voltage VGS(th) VDS=VGS, ID=250µA Drain-Source On-Resistance(Note 3) RDS(on) VGS=10V, ID=5.5A 0.34 gFS VDS=10V, ID=5.5A 7.8 Forward tranconductance(Note 3) 2.5 nA µA 4 V 0.38 Ω S Dynamic Characteristics(Note 4) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 5.5 Total Gate Charge Qg 21 Gate-Source Charge Qgs Gate-Drain Charge Qgd 7 Turn-On Delay Time td(on) 41 Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time 901 VDS=50V,VGS=0V,f=1MHz VDD=520V,VGS=10V,ID=11A VDD =400V, ID=11A,RG=25Ω tf pF 50 nC 4.5 20 ns 123 6.4 Drain-Source Body Diode Characteristics Continuous Body Diode Current IS Pulsed Diode Forward Current ISM Body Diode Voltage VSD Reverse Recovery Time trr Reverse Recovery Charge Qrr Peak Reverse Recovery Current Irrm 9.2 TC=25°C 29 ISD=11A, VGS=0V VR=520V, IF=IS,diF/dt=100A/μs 0.9 1.2 A V 280 ns 2.8 µC 17 A Note 3. Pulse Test : Pulse Width≤300μs, Duty Cycle ≤ 1%. 4. Guaranteed by Design, Not Subject to Production Testing. Rev.3-9-06132022 2/5 MCCSEMI.COM MSJPF11N65 Curve Characteristics Fig. 1 - Typical Output Characteristics Fig. 2 - Transfer Characteristics 20 30 VDS= 10V 20V 25 TJ=25°C 16 10V Drain Current (A) Drain Current (A) 8V 20 7V 15 6V 12 TJ=150°C 8 10 4 VGS=5V 5 0 0 0 4 8 12 16 0 20 2 4 6 8 10 Gate To Source Voltage (V) Drain To Source Voltage (V) Fig. 3 - RDS(ON)—ID Fig. 4 - Capacitance Characteristics 10000 0.50 TA=25°C Ciss 1000 Capacitance (pF) Drain-Source On-Resistance (Ω) Pulsed 0.45 0.40 VGS=10V 0.35 100 Coss 10 Crss 0.30 0.25 1 0.20 0 10 5 15 0 20 10 20 30 40 50 60 Drain To Source Voltage (V) Drain Current (A) Fig. 6 - Normalized On Resistance Characteristics Fig. 5 - Total Gate Charge Characteristics 10 3.0 Normalized On Resistance Gate-Source Voltage (V) VDS=520V 8 6 4 2 2.5 2.0 1.5 1.0 0.5 0 0 5 10 15 20 0.0 -50 25 Total Gate Charge(nC) Rev.3-9-06132022 -25 0 25 50 75 100 125 150 Junction Temperature(°C) 3/5 MCCSEMI.COM MSJPF11N65 Fig.7- Drain-Source Breakdown Voltage Characteristics Fig.  - Safe Operation Area 100 IDS=250μA 850 800 750 700 0 25 50 75 100 125 150 10ms TJ(max)=150°C TC=25°C Single Pulse 1 DC 10 100 1000 Drain-Source Voltage (V) Ambient Temperature(°C) Rev.3-9-06132022 100μs 1ms 0.01 0.1 175 10μs 1 650 -25 Lim ) on S( RD 0.1 600 -50 1μs d ite 10 Drain Current (A) Drain-Source Breakdown Voltage(V) 900 4/5 MCCSEMI.COM MSJPF11N65 Ordering Information Device Packing Part Number-BP Bulk:50pcs/Tube,1Kpcs/Box,5Kpcs/Carton Note : Adding "-HF" Suffix For Halogen Free, eg. 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