MSJU07N65A-TP

MSJU07N65A-TP

  • 厂商:

    MCC(美微科)

  • 封装:

    TO-252(DPAK)

  • 描述:

    表面贴装型 N 通道 650 V 7A(Tc) 63W(Tc) DPAK(TO-252)

  • 详情介绍
  • 数据手册
  • 价格&库存
MSJU07N65A-TP 数据手册
MSJU07N65A Features • • • • • Very Low FOM RDS(on)×Q g Moisture Sensitivity Level 1 Halogen Free. “Green” Device (Note1) Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) N-CHANNEL Super-Junction Power MOSFET Maximum Ratings • • • • Operating Junction Temperature Range : -55°C to +150°C Storage Temperature Range: -55°C to +150°C Thermal Resistance: 62°C/W Junction to Ambient Thermal Resistance: 2°C/W Junction to Case Parameter DPAK(TO-252) Symbol Rating Unit Drain-Source Voltage VDS 650 V Gate-Source Volltage VGS ±30 V Continuous Drain Current TC=25°C TC=100°C ID 7 4.2 A IDM 21 A Single Pulse Avalanche Energy (Note 3) EAS 142 mJ PD 63 W TC=25°C H 1 C O 4 2 I F E 3 V K Pulsed Drain Current (Note 2) Total Power Dissipation J M Q A G L 1RWH +DORJHQIUHH*UHHQ´SURGXFWVDUHGHILQHGDVWKRVHZKLFKFRQWDLQSSP EURPLQHSSPFKORULQH SSPWRWDO%U&O DQGSSPDQWLPRQ\ FRPSRXQGV 2.Repetitive Rating; Pulse Width Limited by Maximum Junction Temperature. 3.VDD=50V, RG=25Ω, Starting TJ=25°C. Internal Structure and Marking Code D MCC MSJU07N65A G B D 1. Gate 2,4. Drain 3. Source DIM A B C D E F G H I J K L M O Q V DIMENSIONS INCHES MM MIN MAX MIN MAX 0.087 0.094 2.20 2.40 0.000 0.005 0.00 0.13 0.026 0.034 0.66 0.86 0.018 0.023 0.46 0.58 0.256 0.264 6.50 6.70 0.201 0.215 5.10 5.46 0.190 4.83 0.236 0.244 6.00 6.20 0.086 0.094 2.18 2.39 0.386 0.409 9.80 10.40 0.114 2.90 0.055 0.067 1.40 1.70 0.063 1.60 0.043 0.051 1.10 1.30 0.000 0.012 0.00 0.30 0.211 5.35 NOTE TYP. TYP. TYP. TYP. S Rev.3-3-08182023 1/5 MCCSEMI.COM MSJU07N65A Electrical Characteristics @ 25°C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics V(BR)DSS VGS=0V, ID=250µA Gate-Source Leakage Current IGSS VDS=0V, VGS =±30V ±100 nA Zero Gate Voltage Drain Current IDSS VDS=650V, VGS=0V 1 µA Gate-Threshold Voltage VGS(th) VDS=VGS, ID=250µA 3 4 V Drain-Source On-Resistance RDS(on) VGS=10V, ID=2.5A 0.53 0.6 Ω Drain-Source Breakdown Voltage Gate Resistance RG f = 1.0MHz Open Drain Diode Forward Voltage VSD VGS=0V, IS=7A Continuous Body Diode Current 650 2 V 21 IS Ω 1.4 V 7 A Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 28.6 Total Gate Charge Qg 13 Gate-Source Charge Qgs Gate-Drain Charge Qgd 5.6 Turn-On Delay Time td(on) 18 Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time tf Reverse Recovery Time trr Reverse Recovery Charge Qrr Peak Reverse Recovery Current Irrm Rev.3-3-08182023 545 VDS=25V,VGS=0V,f=1MHz VDD=520V,VGS=10V,ID=7A VDD=350V, ID=7A, RG=25Ω 640 2.8 33 80 pF nC ns 28 VR=100V, IF=7A, di/dt = 100A/μs 2/5 271 ns 2.9 µC 21.2 A MCCSEMI.COM MSJU07N65A Curve Characteristics Fig. 1 - Typical Output Characteristics Fig. 2 - Transfer Characteristics 25 40 10V 35 8V 30 Drain Current (A) Drain Current (A) 20 15 6V 10 -55°C 25 25°C 20 15 150°C 10 5 5 VGS=4V 0 0 0 5 10 15 20 25 30 2 4 Fig. 3 - RDS(ON)—ID 1.5 6 8 10 Gate To Source Voltage (V) Drain To Source Voltage (V) Fig. 4 - Normalized On Resistance Characteristics 3.0 Normalized On Resistance Drain-Source on Resistance (mΩ) VGS=10V 1.2 0.9 VGS=10V 0.6 0.3 0.0 2.5 2.0 1.5 1.0 0.5 0 5 10 20 15 0.0 -60 25 -30 0 Fig. 5 - Gate Charge 10 30 60 90 120 150 Junction Temperature(°C) Drain Current(A) 10000 Fig. 6 - Capacitance Characteristics VDS=520V IDS=7A Capacitance (pF) Gate-Source Voltage (V) 8 6 4 Ciss 1000 100 2 Crss 0 0 2 4 6 8 10 12 10 0.1 14 10 100 650 Drain To Source Voltage (V) Gate Charge(nC) Rev.3-3-08182023 1 Coss 3/5 MCCSEMI.COM MSJU07N65A Fig. 7 - Normalized Drain-Source Breakdown Voltage Fig. 8 - Safe Operation Area 100 VGS=0V 1.2 ID=250μA Id, Drain Current (A) Normalized Drain-Source Breakdown Voltage 1.3 1.1 1.0 0.9 10μs 10 1 100μs RDS(on) Limited DC 1ms 10ms 0.1 TJ(max)=150°C 0.8 TC=25°C 0.7 -60 -30 30 0 60 90 120 0.01 0.1 150 Single Pulse 1 Normalized Transient Thermal Resistance Junction Temperature (°C) 100 10 1000 Vds, Drain-Source Voltage (V) Fig. 9 - Normalized Maximum Transient Thermal Impedance 10 1 In descending order D=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 0.01 Single Pulse D=Ton/T 1E-3 TJ,PK =TC+PDM·ZθJC·RθJC RθJC=4.0°C/W 1E-4 1E-6 1E-5 1E-4 1E-3 0.01 0.1 1 10 100 Pulse Width (s) Rev.3-3-08182023 4/5 MCCSEMI.COM MSJU07N65A Ordering Information Device Packing Part Number-TP Tape&Reel: 2.5Kpcs/Reel ***IMPORTANT NOTICE*** Micro Commercial Components Corp. reserves the right to make changes without further notice to any product herein to make corrections, modifications , enhancements , improvements , or other changes . Micro Commercial Components Corp . does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights ,nor the rights of others . The user of products in such applications shall assume all risks of such use and will agree to hold Micro Commercial Components Corp . and all the companies whose products are represented on our website, harmless against all damages. Micro Commercial Components Corp. products are sold subject to the general terms and conditions of commercial sale, as published at https://www.mccsemi.com/Home/TermsAndConditions. ***LIFE SUPPORT*** MCC's products are not authorized for use as critical components in life support devices or systems without the express written approval of Micro Commercial Components Corporation. ***CUSTOMER AWARENESS*** Counterfeiting of semiconductor parts is a growing problem in the industry. Micro Commercial Components (MCC) is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. MCC strongly encourages customers to purchase MCC parts either directly from MCC or from Authorized MCC Distributors who are listed by country on our web page cited below. Products customers buy either from MCC directly or from Authorized MCC Distributors are genuine parts, have full traceability, meet MCC's quality standards for handling and storage. MCC will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. MCC is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. Rev.3-3-08182023 5/5 MCCSEMI.COM
MSJU07N65A-TP
物料型号:MSJU07N65A 器件简介:N-CHANNEL Super-Junction Power MOSFET 引脚分配:1. Gate 2, 4. Drain 3. Source 参数特性: - 漏源电压:650V - 栅源电压:±30V - 连续漏电流:7A(25°C),4.4A(100°C) - 脉冲漏电流:28A - 总功耗:78W - 单脉冲雪崩能量:90mJ 功能详解: - 静态特性:漏源击穿电压650V,栅源漏电流+100nA,栅极阈值电压2-4V,漏源导通电阻0.51-0.6mΩ。

- 二极管特性:连续体二极管电流7A,二极管正向电压1.4V,反向恢复时间144ns,反向恢复电荷2.6uC。

- 动态特性:输入电容529pF,输出电容15pF,反向传输电容2.1pF,总栅极电荷14nC。

应用信息:适用于需要低导通电阻和高雪崩能力的电源管理、电机控制等应用。

封装信息:DPAK(TO-252)封装,尺寸和标记代码详见数据手册。
MSJU07N65A-TP 价格&库存

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MSJU07N65A-TP

    库存:0

    MSJU07N65A-TP
    •  国内价格 香港价格
    • 1+21.711331+2.80618
    • 10+13.9127610+1.79822
    • 100+9.43311100+1.21923
    • 500+7.51490500+0.97130
    • 1000+6.897951000+0.89156

    库存:385

    MSJU07N65A-TP
    •  国内价格 香港价格
    • 2500+6.230432500+0.80528
    • 5000+5.818075000+0.75198
    • 7500+5.608097500+0.72484
    • 12500+5.3722212500+0.69436

    库存:385

    MSJU07N65A-TP

      库存:0