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MSJU11N65-TP

MSJU11N65-TP

  • 厂商:

    MCC(美微科)

  • 封装:

    TO252-3

  • 描述:

    MOSFET N-CH 650V 11A DPAK

  • 数据手册
  • 价格&库存
MSJU11N65-TP 数据手册
MSJU11N65 Features Very Low FOM RDS(on)×Q g • • Epoxy Meets UL 94 V-0 Flammability Rating • Moisture Sensitivity Level 1 • • Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) N-CHANNEL Super-Junction Power MOSFET Maximum Ratings • Operating Junction Temperature Range : -55°C to +150°C • Storage Temperature Range: -55°C to +150°C • Thermal Resistance: 62°C/W Junction to Ambient • Thermal Resistance: 1.6°C/W Junction to Case Parameter DPAK Symbol Rating Unit Drain-Source Voltage VDS 650 V Gate-Source Volltage VGS ±30 V Continuous Drain Current ID 11 A Pulsed Drain Current (Note 1) IDM 33 A EAS 211 mJ Single Pulse Avalanche Energy Avalanche Current (Note 2) (Note 1) Repetitive Avalanche Energy Total Power Dissipation (Note 1) TC=25°C IAR 1.6 A EAR 0.32 mJ PD 78 W Note: 1. Repetitive Rating, Pulse Width Limited by Maximum Junction Temperature. 2. IAS=1.6A, VDD=50V, RG=25Ω, Starting TJ=25°C . Internal Structure D G S Rev.3-1-05092019 1.GATE 2.DRAIN 3.SOURCE 4.DRAIN 1/4 J H 1 C O 4 2 I F E 3 V K M Q A G L DIM A B C D E F G H I J K L M O Q V DIMENSIONS INCHES MM MIN MAX MIN MAX 0.087 0.094 2.20 2.40 0.000 0.005 0.00 0.13 0.026 0.034 0.66 0.86 0.018 0.023 0.46 0.58 0.256 0.264 6.50 6.70 0.201 0.215 5.10 5.46 0.190 4.83 0.236 0.244 6.00 6.20 0.086 0.094 2.18 2.39 0.386 0.409 9.80 10.40 0.114 2.90 0.055 0.067 1.40 1.70 0.063 1.60 0.043 0.051 1.10 1.30 0.000 0.012 0.00 0.30 0.211 5.35 D B NOTE TYP. TYP. TYP. TYP. MCCSEMI.COM MSJU11N65 Electrical Characteristics @ 25°C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics V(BR)DSS VGS=0V, ID=250µA Gate-Source Leakage Current IGSS VDS=0V, VGS =±30V ±100 IDSS VDS=650V, VGS=0V 1 Zero Gate Voltage Drain Current Drain-Source Breakdown Voltage 650 V µA VDS=650V, VGS=0V, TJ=150°C 100 Gate-Threshold Voltage VGS(th) VDS=VGS, ID=250µA Drain-Source On-Resistance(Note 3) RDS(on) VGS=10V, ID=5.5A 0.34 gFS VDS=10V, ID=5.5A 7.8 Forward tranconductance(Note 3) nA 2.5 4 V 0.38 Ω S Dynamic Characteristics(Note 4) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 5.5 Total Gate Charge Qg 21 Gate-Source Charge Qgs Gate-Drain Charge Qgd 7 Turn-On Delay Time td(on) 41 Turn-On Rise Time tr Turn-Off Delay Time td(off) 123 tf 6.4 Turn-Off Fall Time 901 VDS=50V,VGS=0V,f=1MHz VDD=520V,VGS=10V,ID=11A VDD =400V, ID=11A,RG=25Ω pF 50 nC 4.5 20 ns Drain-Source Body Diode Characteristics Continuous Body Diode Current IS Pulsed Diode Forward Current ISM Body Diode Voltage VSD Reverse Recovery Time trr Reverse Recovery Charge Qrr Peak Reverse Recovery Current Irrm 9.2 TC=25°C A 29 ISD=11A, VGS=0V VR=520V, IF=IS,diF/dt=100A/μs 0.9 1.2 V 280 ns 2.8 µC 17 A Note 3. Pulse Test : Pulse Width≤300μs, Duty Cycle ≤ 1%. 4.Guaranteed by Design, Not Subject to Production Testing. Rev.3-1-05092019 2/4 MCCSEMI.COM MSJU11N65 Curve Characteristics Fig. 1 - Typical Output Characteristics Fig. 2 - Transfer Characteristics 20 30 VDS= 10V 20V 25 TJ=25°C 16 10V Drain Current (A) Drain Current (A) 8V 20 7V 15 6V 12 TJ=150°C 8 10 4 VGS=5V 5 0 0 0 4 8 12 16 0 20 2 4 6 8 10 Gate To Source Voltage (V) Drain To Source Voltage (V) Fig. 3 - RDS(ON)—ID Fig. 4 - Capacitance Characteristics 10000 0.50 TA=25°C Ciss 1000 Capacitance (pF) Drain-Source On-Resistance (Ω) Pulsed 0.45 0.40 VGS=10V 0.35 100 Coss 10 Crss 0.30 0.25 0.20 1 0 10 5 15 0 20 10 20 Drain Current (A) 30 40 50 60 Drain To Source Voltage (V) Fig. 6 - Normalized On Resistance Characteristics Fig. 5 - Total Gate Charge Characteristics 10 3.0 Normalized On Resistance Gate-Source Voltage (V) VDS=520V 8 6 4 2 2.5 2.0 1.5 1.0 0.5 0 0 5 10 15 20 0.0 -50 25 Total Gate Charge(nC) Rev.3-1-05092019 -25 0 25 50 75 100 125 150 Junction Temperature(°C) 3/4 MCCSEMI.COM MSJU11N65 Ordering Information Device Packing Part Number-TP Tape&Reel: 2.5Kpcs/Reel Note : Adding "-HF" Suffix for Halogen Free, eg. Part Number-TP-HF ***IMPORTANT NOTICE*** Micro Commercial Components Corp. reserves the right to make changes without further notice to any product herein to make corrections, modifications , enhancements , improvements , or other changes . Micro Commercial Components Corp . does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights ,nor the rights of others . The user of products in such applications shall assume all risks of such use and will agree to hold Micro Commercial Components Corp . and all the companies whose products are represented on our website, harmless against all damages. ***LIFE SUPPORT*** MCC's products are not authorized for use as critical components in life support devices or systems without the express written approval of Micro Commercial Components Corporation. ***CUSTOMER AWARENESS*** Counterfeiting of semiconductor parts is a growing problem in the industry. Micro Commercial Components (MCC) is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. MCC strongly encourages customers to purchase MCC parts either directly from MCC or from Authorized MCC Distributors who are listed by country on our web page cited below. Products customers buy either from MCC directly or from Authorized MCC Distributors are genuine parts, have full traceability, meet MCC's quality standards for handling and storage. MCC will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. MCC is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. Rev.3-1-05092019 4/4 MCCSEMI.COM
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