MSJU11N65
Features
Very Low FOM RDS(on)×Q g
•
•
Epoxy Meets UL 94 V-0 Flammability Rating
•
Moisture Sensitivity Level 1
•
•
Halogen Free Available Upon Request By Adding Suffix "-HF"
Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS
Compliant. See Ordering Information)
N-CHANNEL
Super-Junction
Power MOSFET
Maximum Ratings
•
Operating Junction Temperature Range : -55°C to +150°C
•
Storage Temperature Range: -55°C to +150°C
•
Thermal Resistance: 62°C/W Junction to Ambient
•
Thermal Resistance: 1.6°C/W Junction to Case
Parameter
DPAK
Symbol
Rating
Unit
Drain-Source Voltage
VDS
650
V
Gate-Source Volltage
VGS
±30
V
Continuous Drain Current
ID
11
A
Pulsed Drain Current (Note 1)
IDM
33
A
EAS
211
mJ
Single Pulse Avalanche Energy
Avalanche Current
(Note 2)
(Note 1)
Repetitive Avalanche Energy
Total Power Dissipation
(Note 1)
TC=25°C
IAR
1.6
A
EAR
0.32
mJ
PD
78
W
Note: 1. Repetitive Rating, Pulse Width Limited by Maximum Junction
Temperature.
2. IAS=1.6A, VDD=50V, RG=25Ω, Starting TJ=25°C .
Internal Structure
D
G
S
Rev.3-1-05092019
1.GATE
2.DRAIN
3.SOURCE
4.DRAIN
1/4
J
H
1
C
O
4
2
I
F
E
3
V
K
M
Q
A
G
L
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
O
Q
V
DIMENSIONS
INCHES
MM
MIN MAX MIN MAX
0.087 0.094 2.20 2.40
0.000 0.005 0.00 0.13
0.026 0.034 0.66 0.86
0.018 0.023 0.46 0.58
0.256 0.264 6.50 6.70
0.201 0.215 5.10 5.46
0.190
4.83
0.236 0.244 6.00 6.20
0.086 0.094 2.18 2.39
0.386 0.409 9.80 10.40
0.114
2.90
0.055 0.067 1.40 1.70
0.063
1.60
0.043 0.051 1.10 1.30
0.000 0.012 0.00 0.30
0.211
5.35
D
B
NOTE
TYP.
TYP.
TYP.
TYP.
MCCSEMI.COM
MSJU11N65
Electrical Characteristics @ 25°C (Unless Otherwise Specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static Characteristics
V(BR)DSS
VGS=0V, ID=250µA
Gate-Source Leakage Current
IGSS
VDS=0V, VGS =±30V
±100
IDSS
VDS=650V, VGS=0V
1
Zero Gate Voltage Drain Current
Drain-Source Breakdown Voltage
650
V
µA
VDS=650V, VGS=0V, TJ=150°C
100
Gate-Threshold Voltage
VGS(th)
VDS=VGS, ID=250µA
Drain-Source On-Resistance(Note 3)
RDS(on)
VGS=10V, ID=5.5A
0.34
gFS
VDS=10V, ID=5.5A
7.8
Forward tranconductance(Note 3)
nA
2.5
4
V
0.38
Ω
S
Dynamic Characteristics(Note 4)
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
5.5
Total Gate Charge
Qg
21
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
7
Turn-On Delay Time
td(on)
41
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
123
tf
6.4
Turn-Off Fall Time
901
VDS=50V,VGS=0V,f=1MHz
VDD=520V,VGS=10V,ID=11A
VDD =400V, ID=11A,RG=25Ω
pF
50
nC
4.5
20
ns
Drain-Source Body Diode Characteristics
Continuous Body Diode Current
IS
Pulsed Diode Forward Current
ISM
Body Diode Voltage
VSD
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
Peak Reverse Recovery Current
Irrm
9.2
TC=25°C
A
29
ISD=11A, VGS=0V
VR=520V, IF=IS,diF/dt=100A/μs
0.9
1.2
V
280
ns
2.8
µC
17
A
Note 3. Pulse Test : Pulse Width≤300μs, Duty Cycle ≤ 1%.
4.Guaranteed by Design, Not Subject to Production Testing.
Rev.3-1-05092019
2/4
MCCSEMI.COM
MSJU11N65
Curve Characteristics
Fig. 1 - Typical Output Characteristics
Fig. 2 - Transfer Characteristics
20
30
VDS= 10V
20V
25
TJ=25°C
16
10V
Drain Current (A)
Drain Current (A)
8V
20
7V
15
6V
12
TJ=150°C
8
10
4
VGS=5V
5
0
0
0
4
8
12
16
0
20
2
4
6
8
10
Gate To Source Voltage (V)
Drain To Source Voltage (V)
Fig. 3 - RDS(ON)—ID
Fig. 4 - Capacitance Characteristics
10000
0.50
TA=25°C
Ciss
1000
Capacitance (pF)
Drain-Source On-Resistance (Ω)
Pulsed
0.45
0.40
VGS=10V
0.35
100
Coss
10
Crss
0.30
0.25
0.20
1
0
10
5
15
0
20
10
20
Drain Current (A)
30
40
50
60
Drain To Source Voltage (V)
Fig. 6 - Normalized On Resistance Characteristics
Fig. 5 - Total Gate Charge Characteristics
10
3.0
Normalized On Resistance
Gate-Source Voltage (V)
VDS=520V
8
6
4
2
2.5
2.0
1.5
1.0
0.5
0
0
5
10
15
20
0.0
-50
25
Total Gate Charge(nC)
Rev.3-1-05092019
-25
0
25
50
75
100
125
150
Junction Temperature(°C)
3/4
MCCSEMI.COM
MSJU11N65
Ordering Information
Device
Packing
Part Number-TP
Tape&Reel: 2.5Kpcs/Reel
Note : Adding "-HF" Suffix for Halogen Free, eg. Part Number-TP-HF
***IMPORTANT NOTICE***
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make corrections, modifications , enhancements , improvements , or other changes . Micro Commercial Components
Corp . does not assume any liability arising out of the application or use of any product described herein; neither does it
convey any license under its patent rights ,nor the rights of others . The user of products in such applications shall assume all
risks of such use and will agree to hold Micro Commercial Components Corp . and all the companies whose products are
represented on our website, harmless against all damages.
***LIFE SUPPORT***
MCC's products are not authorized for use as critical components in life support devices or systems without the express
written approval of Micro Commercial Components Corporation.
***CUSTOMER AWARENESS***
Counterfeiting of semiconductor parts is a growing problem in the industry. Micro Commercial Components (MCC) is taking
strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. MCC strongly encourages
customers to purchase MCC parts either directly from MCC or from Authorized MCC Distributors who are listed by country on
our web page cited below. Products customers buy either from MCC directly or from Authorized MCC Distributors are genuine
parts, have full traceability, meet MCC's quality standards for handling and storage. MCC will not provide any warranty
coverage or other assistance for parts bought from Unauthorized Sources. MCC is committed to combat this global
problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized
distributors.
Rev.3-1-05092019
4/4
MCCSEMI.COM
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