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MSJW20N65-BP

MSJW20N65-BP

  • 厂商:

    MCC(美微科)

  • 封装:

    TO-247-3

  • 描述:

    MOSFET N-CH TO247

  • 数据手册
  • 价格&库存
MSJW20N65-BP 数据手册
MSJW20N65 Features • • • • Optimized Body Diode Reverse Recovery Performance Low On-resistance and Low Conduction Losses Ultra Low Gate Charge Cause Lower Driving Requirement Epoxy Meets UL 94 V-0 Flammability Rating • Moisture Sensitivity Level 1 • • Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) N-CHANNEL Super-Junction Power MOSFET Maximum Ratings • Operating Junction Temperature Range : -55°C to +150°C • Storage Temperature Range: -55°C to +150°C • Thermal Resistance: 0.83°C/W Junction to Case Parameter TO-247 Symbol Rating Unit Drain-Source Voltage VDS 650 V Gate-Source Volltage VGS ±30 V 20 A 12 A Continuous Drain Current TC=25°C ID TC=100°C C E B Pulsed Drain Current (Note 1) IDM 60 A Single Pulse Avalanche Energy (Note 2) EAS 484 mJ Repetitive Avalanche Energy EAR 0.7 mJ Avalanche Current IAR 3.5 A Total Power Dissipation PD 151 W A PIN 2 1 Q 3 P F K V J D G Note: 1.Repetitive Rating; Pulse Width Limited by Maximum Junction Temperature. 2.IAS=3.5A, VDD=50V, RG=25Ω, Starting TJ=25°C. DIM A B C D E F J K P Q V G Internal Structure D G S Rev.3-2-12012020 1. Gate 2. Drain 3. Source 1/4 DIMENSIONS INCHES MM MIN MAX MIN MAX 0.787 0.866 20.00 22.00 0.598 0.638 15.20 16.20 0.185 0.208 4.70 5.30 0.035 0.059 0.90 1.50 0.059 0.094 1.50 2.40 0.067 0.091 1.70 2.30 0.019 0.031 0.48 0.80 0.748 0.833 19.00 21.15 0.122 0.189 3.10 4.80 0.118 0.150 3.00 3.80 0.106 0.134 2.70 3.40 0.197 0.224 5.00 5.70 NOTE Φ MCCSEMI.COM MSJW20N65 Electrical Characteristics @ 25°C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics V(BR)DSS VGS=0V, ID=250µA Gate-Source Leakage Current IGSS VDS=0V, VGS =±30V Zero Gate Voltage Drain Current IDSS Drain-Source Breakdown Voltage 650 V ±100 VDS=650V, VGS=0V, TC=25°C 1 VDS=650V, VGS=0V, TC=125°C 100 Gate-Threshold Voltage (Note 3) VGS(th) VDS=VGS, ID=250µA Drain-Source On-Resistance (Note 3) RDS(on) VGS=10V, ID=10A 150 f = 1.0MHz Open Drain 12 Gate Resistance (Note 3) RG 2.5 nA µA 4.5 V 170 mΩ Ω Dynamic Characteristics (Note 4) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 6 Total Gate Charge Qg 39 Gate-Source Charge Qgs Gate-Drain Charge Qgd 15 Turn-On Delay Time td(on) 15 Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time 1724 VDS=100V,VGS=0V,f=1MHz VDS=520V,VGS=10V,ID=20A VDD=400V,ID=20A VGS=10V,RGEN=25Ω tf pF 61 nC 8 59 ns 121 44 Drain-Source Diode Characteristics Diode Forward Voltage VSD Continuous Body Diode Current IS Reverse Recovery Time trr Reverse Recovery Charge Qrr Peak Reverse Recovery Current Irrm VGS=0V, IS=20A VR=400V, IF=IS, diF/dt = 100A/μs 1.2 V 20 A 423 ns 5.3 μC 25 A Note: 3.Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 1% . 4.Guaranteed by Design, not Subject to Production. Rev.3-2-12012020 2/4 MCCSEMI.COM MSJW20N65 Curve Characteristics Fig. 1 - Typical Output Characteristics Fig. 2 - Transfer Characteristics 80 70 VDS=20V 20V 60 25°C 60 Drain Current (A) 10V Drain Current (A) 8V 40 7V 50 40 30 150°C 20 20 6V 10 5.5V VGS=5V 0 0 0 4 8 12 16 0 20 2 4 6 8 10 Gate To Source Voltage (V) Drain To Source Voltage (V) Fig. 3 - RDS(ON)—ID Fig. 4 - Capacitance Characteristics 100000 0.20 10000 0.18 Capacitance (pF) Drain-Source on Resistance (Ω) VGS=10V 0.16 0.14 Ciss 1000 Coss 100 Crss 10 0.12 1 0.10 0 4 8 12 16 0 20 25 50 75 100 125 150 Drain To Source Voltage (V) Drain Current(A) Fig. 6 - Normalized On Resistance Characteristics Fig. 5 - Total Gate Charge Characteristics 3.0 10 VDS=520V Normalized On Resistance Gate-Source Voltage (V) ID=20A 8 6 4 2 2.5 2.0 1.5 1.0 0.5 0.0 -50 0 0 10 20 30 40 0 25 50 75 100 125 150 Junction Temperature(°C) Total Gate Charge(nC) Rev.3-2-12012020 -25 3/4 MCCSEMI.COM MSJW20N65 Ordering Information Device Packing MSJW20N65-BP Tube:30pcs/Tube, 360pcs/Box,1.8K/Ctn; Note : Adding "-HF" Suffix For Halogen Free, eg. Part Number-BP-HF ***IMPORTANT NOTICE*** Micro Commercial Components Corp. reserves the right to make changes without further notice to any product herein to make corrections, modifications , enhancements , improvements , or other changes . Micro Commercial Components Corp . does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights ,nor the rights of others . The user of products in such applications shall assume all risks of such use and will agree to hold Micro Commercial Components Corp . and all the companies whose products are represented on our website, harmless against all damages.0LFUR&RPPHUFLDO&RPSRQHQWV&RUSSURGXFWVDUHVROGVXEMHFW WRWKHJHQHUDOWHUPVDQGFRQGLWLRQVRIFRPPHUFLDOVDOHDVSXEOLVKHGDW KWWSVZZZPFFVHPLFRP+RPH7HUPV$QG&RQGLWLRQV ***LIFE SUPPORT*** MCC's products are not authorized for use as critical components in life support devices or systems without the express written approval of Micro Commercial Components Corporation. ***CUSTOMER AWARENESS*** Counterfeiting of semiconductor parts is a growing problem in the industry. Micro Commercial Components (MCC) is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. MCC strongly encourages customers to purchase MCC parts either directly from MCC or from Authorized MCC Distributors who are listed by country on our web page cited below. Products customers buy either from MCC directly or from Authorized MCC Distributors are genuine parts, have full traceability, meet MCC's quality standards for handling and storage. 0&& ZLOO QRW SURYLGH DQ\ ZDUUDQW\ FRYHUDJH RU RWKHU DVVLVWDQFH IRU SDUWV ERXJKW IURP 8QDXWKRUL]HG 6RXUFHV. MCC is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. Rev.3-2-12012020 4/4 MCCSEMI.COM
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